Diodes BYY58A User Manual
BYY57A / BYY58A
50A Silicon Power Rectifier Diode
Part no.
Description
The BYY57A/58A are hermetically sealed 50Adiodes, which are available in different reverse
voltage classes up to 800V.
Features
• Forward current 50A
• Reverse voltage 75V – 800V
• Hermetic press-fit package
• Available in different modifications of the
package
Pinout details
1
2
BYY57A: 1 – cathode; 2 - anode
BYY58A: 1 – anode; 2 - cathode
The diodes can be delivered with limited forward
voltage and reverse current differences for
parallel connecting in rectifier stacks and backoff-diodes
Applications
• Power supplies
• Rectifier diode in car generators
• Rectifier bridges/stacks
• Back-off-diodes
Typical application circuit
Six pulse
bridge
connection
3 x BYY57A-700
+ -
~ ~ ~
3 x BYY58A-700
Ordering information
Device Quantity per box Options
BYY57A-75; …; BYY57A-800 500
BYY58A-75; …; BYY58A-800 500
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY57A- black, BYY58A – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57...……………………………... diode type
A400 ……………………………….. 50A diode / repetitive peak reverse voltage V
Issue 2 – November 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
(in V) 400
RRM
BYY57A / BYY58A
Absolute maximum ratings (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Unit Test condition
BYY57A-75 BYY58A-75 75
BYY57A-100 BYY58A-100 100
BYY57A-150 BYY58A-150 150
BYY57A-200 BYY58A-200 200
Repetitive
peak
reverse
voltage
BYY57A-300 BYY58A-300 300
BYY57A-400 BYY58A-400 400
BYY57A-500 BYY58A-500 500
BYY57A-600 BYY58A-600 600
BYY57A-700 BYY58A-700 700
BYY57A-800 BYY58A-800
Forward current, arithmetic value I
Surge forward current I
Maximum rated value
Repetitive peak forward current
I
FRM
V
RRM
FAV
FSM
∫i²dt
=π*I
FAV
V T
= 150°C
c
800
50 A
900
A
800
4050
A²s
3200
half-sine wave,
≤ 10 ms
= 175°C half-sine
T
J
wave, ≤ 10 ms
half-sine wave,
≤ 10 ms
= 175°C half-sine
T
J
wave, ≤ 10 ms
157 A f = >15 Hz
Effective forward current I
Junction temperature T
Storage temperature range T
FRMS
Jmax
stg
78 A
200 °C
- 50 to + 175 °C
Issue 2 – November 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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