Diodes BST52 User Manual
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A
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80V NPN SILICON PLANAR DARLINGTON TRANSISTOR
Features
• BV
• High current gain
• Max Continuous Current I
• Fast switching
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free, “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
CEO
> 80V
C
SOT89
Top View
= 500mA
Mechanical Data
• Case: SOT89
• Moisture Sensitivity: Level 1 per J-STD-020
• UL Flammability Rating 94V-0
• Terminals: Matte Tin Finish
• Weight: 0.052 grams (Approximate)
Device symbol Top View
Diodes Incorporated
BST52
IN SOT89
Pin-out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
BST52TA AS3 7 12 1,000
Notes: 1. No purposefully added lead.
2. Halogen and Antimony Free. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
BST52
tasheet Number: DS33022 Rev. 4 - 2
Da
www.diodes.com
S3 = Product Type Marking Code
1 of 6
December 2011
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Diodes Incorporated
BST52
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Thermal Characteristics @T
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
Notes: 4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
P
D
R
θJA
R
θJL
T
J,TSTG
90 V
80 V
10 V
500 mA
1.5 A
100 mA
1 W
125
8.66
-55 to +150
°C/W
°C/W
°C
Thermal Characteristics
120
25mm x 25mm 1oz Cu
T
100
amb
= 25°C
100
25mm x 25mm 1oz Cu
T
= 25°C
amb
Single pulse
80
D=0.5
60
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Therma l R esistance (°C/W)
Puls e Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Pow er Dissipati o n (W )
Temperature (°C)
25mm x 25mm 1oz Cu
Deratin g Curve
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Pow e r Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
BST52
tasheet Number: DS33022 Rev. 4 - 2
Da
2 of 6
www.diodes.com
December 2011
© Diodes Incorporated
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