Diodes BST39 User Manual
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – JUNE 1996 ✪
FEATURES
* Fast Switching
* High h
COMPLEMENTARY TYPE – BST16
.
FE
BST39
C
PARTMAKING DETAIL – AT1
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Output Capacitance C
Input Capacitance C
Transition Frequency f
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT458 datasheet.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
V
CE(sat)
V
BE(sat)
h
FE
obo
ibo
T
400 V
350 V IC=1mA*
5V
20 nA VCB=300V
0.5 V IC=50mA, IB=4mA
1.3 V IC=50mA, IB=4mA
40 IC=20mA, VCE=10V*
2pFV
20 pF VEB=10V, f=1MHz
70 MHz IC=10mA, VCE=10V,
400 V
350 V
5V
1A
500 mA
1W
-65 to +150 °C
I
=10µA
C
I
=10µA
E
=10V, f=1MHz
CB
f=5MHz
E
C
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