Diodes BSS84W User Manual

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

I

V

R

(BR)DSS

-50V

10Ω V

DS(ON)

= -5V

GS

D

TA = +25°C

-130mA

Description

This MOSFET has been designed to minimize the on-state
resistance (R
making it ideal for high efficiency power management applications.

) and yet maintain superior switching performance,

DS(ON)

Applications

 General Purpose Interfacing Switch
 Power Management Functions
 Analog Switch

SOT323

Top View

Gate

Equivalent Circuit

Ordering Information (Note 4 & 5)

BSS84W

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323
 Case Material: Molded Plastic, "Green" Molding Compound, UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020C
 Terminal Connections: See Diagram
 Terminals: Solderable per MIL-STD-202, Method 208
 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Weight: 0.006 grams (approximate)

Drain

D

Source

GS

Top View

e3

Part Number Compliance Case Packaging

BSS84W-7-F Standard SOT323 3000 / Tape & Reel

BSS84WQ-7-F Automotive SOT323 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

BSS84W

Document number: DS30205 Rev. 15 - 2

K84

Shanghai A/T Site

1 of 5

www.diodes.com

K84 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

September 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage (Note 6)
Gate-Source Voltage Continuous
Drain Current (Note 6) Continuous
Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

V
V
V

IDM

R

TJ, T

DSS
DGR
GSS

ID

PD

θJA

STG

BSS84W

-50 V

-50 V

20

V

-130 mA

-1 A

200 mW
625 °C/W

-55 to +150 °C

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-50 -75





 







-1

-2

-100
10

V

VGS = 0V, ID = -250µA

µA

V

= -50V, VGS = 0V, TJ = +25°C

DS

µA

V

= -50V, VGS = 0V, TJ = +125°C

DS

nA

V

= -25V, VGS = 0V, TJ = +25°C

DS

nA

VGS = 20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS(ON)

GS(th)

gFS

-0.8 -1.6 -2.0 V


0.05

6 10 Ω

 

VDS = VGS, ID = -1mA
VGS = -5V, ID = -0.1A

S

V

= -25V, ID = -0.1A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

 
 
 

C

iss

C

oss

C

rss

45 pF
25 pF
12 pF

VDS = -25V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time

Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

7. Short duration pulse test used to minimize self-heating effect.

BSS84W

Document number: DS30205 Rev. 15 - 2

t

D(ON)

t

D(OFF)

www.diodes.com




2 of 5

10
18




ns
ns

V

= -30V, ID = -0.27A,

DD

R

= 50Ω, V

GEN

= -10V

GS

September 2013

© Diodes Incorporated