Diodes BSS84V User Manual

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

V

(BR)DSS

-50V

R

10 @ V

DS(on) max

= -5V

GS

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch

NEW PRODUCT

 Power Management Functions

 Analog Switch

SOT563

TOP VIEW

I

D

TA = 25°C

-130mA

BSS84V

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT563

 Case Material: Molded Plastic, "Green" Molding

Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020C

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

D

2

S

2

TOP VIEW

Internal Schematic

S

G

1

1

D

G

1

2

e3

Ordering Information (Note 4)

Part Number Case Packaging

BSS84V-7 SOT563 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012

Code S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

BSS84V

Document number: DS30605 Rev. 9 - 2

K84 YM

K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September

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



)

)

)

)

BSS84V

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Gate-Source Voltage Continuous
Drain Current (Note 6) Continuous

V

DSS

V

DGR

V

GSS

ID

-50 V

-50 V

20

V

-130 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation
Thermal Resistance, Junction to Ambient

NEW PRODUCT

Operating and Storage Temperature Range

R

Tj, T

PD

θJA

STG

150 mW
833

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-50 -75













 



-1

-2

-100

50

V

VGS = 0V, ID = -250µA

µA

V

= -50V, VGS = 0V, TJ = +25C

DS

µA

V

= -50V, VGS = 0V, TJ = +125C

DS

nA

V

= -25V, VGS = 0V, TJ = +25C

DS

nA

VGS = 20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS (ON

GS(th

gFS

-0.8 -1.6 -2.0 V


0.05

2 10

 

VDS = VGS, ID = -1mA



VGS = -5V, ID = -0.100A

S

V

= -25V, ID = -0.1A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

iss

oss

rss

 
 
 

C

C

C

45 pF
25 pF
12 pF

VDS = -25V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. RGS  20K.

6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

7. Short duration pulse test used to minimize self-heating effect.

t

D(ON

t

D(OFF





10
18




ns
ns

V

= -30V, ID = -0.27A,

DD

R

= 50, V

GEN

GS

= -10V

BSS84V

Document number: DS30605 Rev. 9 - 2

2 of 5

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February 2013

© Diodes Incorporated