Diodes BSS84DW User Manual

Product Summary

I

V

(BR)DSS

-50V

R

10 @ V

DS(on) max

= -5V

GS

D

TA = +25°C

-130mA

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch

 Power Management Functions

 Analog Switch

SOT363

Top View

BSS84DW

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

D

2

S

2

Top View

Internal Schematic

S

G

1

1

D

G

1

2

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

BSS84DW-7-F Standard SOT363 3,000/Tape & Reel

BSS84DWQ-13 Automotive SOT363 10,000/Tape & Reel

BSS84DWQ-7 Automotive SOT363 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012

Code J K L M N P R S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K84 YM

K84 YM

BSS84DW

Document number: DS30204 Rev. 18 - 2

K84 YM

www.diodes.com

K84 YM

K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

January 2014

© Diodes Incorporated

)

)

)

)

BSS84DW

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Gate-Source Voltage Continuous
Drain Current (Note 6) Continuous

V

DSS

V

DGR

V

GSS

I

D

-50 V

-50 V

20

V

-130 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

θJA

T

, T

J

STG

300 mW
417

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-50 -75











 



-1

-2

-100

10

V

VGS = 0V, ID = -250µA

= -50V, VGS = 0V, TJ = +25°C

V

µA

DS

µA
nA

nA

= -50V, VGS = 0V, TJ = +125°C

V

DS

V

= -25V, VGS = 0V, TJ = +25°C

DS

VGS = 20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS (ON

GS(th

g

FS

-0.8 -1.6 -2.0 V



0.05

6 10 Ω

 

VDS = VGS, ID = -1mA
VGS = -5V, ID = -0.100A

S

V

= -25V, ID = -0.1A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

 
 
 

C

iss

C

oss

C

rss

45 pF
25 pF

V

12 pF

= -25V, V

DS

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Notes: 5. RGS  20KΩ.

6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

t

D(ON

t

D(OFF




10
18




ns
ns

V

= -30V, ID = -0.27A,

DD

R

= 50Ω, V

GEN

GS

= -10V Turn-Off Delay Time

BSS84DW

Document number: DS30204 Rev. 18 - 2

2 of 5

www.diodes.com

January 2014

© Diodes Incorporated