Diodes BSS8402DW User Manual

Product Summary

I

Device

Q1 60V
Q2 -50V

V

(BR)DSS

R

DS(on) max

13.5Ω @ V
10Ω @ V

GS

GS

= 10V

= -5V

D

TA = +25°C

115mA

-130mA

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

• General Purpose Interfacing Switch

• Power Management Functions

• Analog Switch

SOT363

Top View

BSS8402DW

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

D

1

Q

1

S

1

Top View

Internal Schematic

S

G

2

2

Q

2

D

G

2

1

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel

BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel

BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel

BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code P R S T U V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

KNP

YM

BSS8402DW

Document number: DS30380 Rev. 21 - 2

KNP

www.diodes.com

KNP = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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February 2014

© Diodes Incorporated

BSS8402DW

Maximum Ratings – Total Device (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

P

R

T

J, TSTG

θJA

D

200 mW

625 °C/W

-55 to +150 °C

Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Drain-Gate Voltage R

≤ 1.0MΩ V

GS

Gate-Source Voltage Continuous
Pulsed

Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed

V

DSS

DGR

V

GSS

I

D

60 V

60 V

±20
±40

V

115

73

mA

800

Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Drain-Gate Voltage RGS ≤ 20KΩ V

Gate-Source Voltage Continuous

Drain Current (Note 5) Continuous

Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

V

DSS

DGR

V

GSS

I

D

-50 V

-50 V

±20

V

-130 mA

BSS8402DW

Document number: DS30380 Rev. 21 - 2

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February 2014

© Diodes Incorporated

Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC = +25°C
@ T

= +125°C

C

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

60 70

⎯ ⎯

⎯ ⎯

⎯

1.0

500

±10 nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance @ TJ = +25°C
@ T

= +125°C

J

On-State Drain Current

Forward Transconductance

V

R

DS(on)

I

GS(th)

D(on)

g

FS

1.0

⎯

⎯

3.2

4.4

0.5 1.0

80

⎯ ⎯

2.5 V

7.5

13.5

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

⎯

⎯

⎯

22 50 pF

11 25 pF

2.0 5.0 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

t

D(on)

t

D(off)

⎯

⎯

7.0 20 ns

11 20 ns

Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

-50

DSS

⎯ ⎯

⎯

⎯ ⎯

⎯ ⎯

⎯

-1

-2

⎯

-100

⎯

±10

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

R

DS (on)

GS(th)

g

FS

-0.8

⎯ ⎯

.05

-2.0 V

⎯

10 Ω

⎯ ⎯

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

C

C

⎯ ⎯

iss

⎯ ⎯

oss

⎯ ⎯

rss

45 pF

25 pF

12 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

Note: 6. Short duration pulse test used to minimize self-heating effect.

BSS8402DW

Document number: DS30380 Rev. 21 - 2

t

D(on)

t

⎯

D(off)

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⎯

10

18

⎯

⎯

BSS8402DW

= +25°C, unless otherwise specified.)

A

V

VGS = 0V, ID = 10µA

µA

VDS = 60V, V

VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250µA

= 5.0V, ID = 0.05A

V

GS

Ω

VGS = 10V, ID = 0.5A

A

VGS = 10V, VDS = 7.5V

mS

VDS =10V, ID = 0.2A

= 25V, VGS = 0V, f = 1.0MHz

V

DS

= 30V, ID = 0.2A,

V

DD

R

= 150Ω, V

L

= +25°C, unless otherwise specified.)

A

V

VGS = 0V, ID = -250µA

V

µA
µA
nA

nA

= -50V, VGS = 0V, TJ = 25°C

DS

V

= -50V, VGS = 0V, TJ = 125°C

DS

V

= -25V, VGS = 0V, TJ = 25°C

DS

VGS = ±20V, V

VDS = VGS, ID = -1mA

VGS = -5V, ID = -0.100A

S

V

= -25V, ID = -0.1A

DS

= -25V, V

V

DS

ns

ns

= -30V, ID = -0.27A,

V

DD

R

= 50Ω, V

GEN

= 0V

GS

= 10V, R

GEN

= 0V

DS

= 0V, f = 1.0MHz

GS

= -10V

GS

© Diodes Incorporated

February 2014

GEN

= 25Ω