Diodes BSS84 User Manual

p

M

Product Summary

I

V

(BR)DSS

-50V

R

DS(on) max

10 @ V

GS

= -5V

D

TA = +25°C

-130mA

Description

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch
 Power Management Functions
 Analog Switch

SOT23

Gate

Top View Equivalent Circuit To

BSS84

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish (Lead Free Plating) Solderable per

MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)

Drain

Source

e3

D

G

S

View

Ordering Information (Note 4)

Part Number Qualification Case Packaging

BSS84-7-F Commercial SOT23 3000/Tape & Reel

BSS84Q-7-F Automotive SOT23 3000/Tape & Reel

BSS84-13-F Commercial SOT23 10000/Tape & Reel

BSS84Q-13-F Automotive SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017

Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K84

Chengdu A/T Site

YM

BSS84

Document number: DS30149 Rev. 20 - 2

K84

Shanghai A/T Site

YM

www.diodes.com

K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y

= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

1 of 5

August 2013

© Diodes Incorporated



)

)

)

)

BSS84

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage RGS  20K V
Gate-Source Voltage Continuous
Drain Current (Note 5) Continuous
Pulsed Drain Current

V

DSS
DGR

V

GSS

I

D

I

DM

-50 V

-50 V

20

V

-130 mA

-1.2 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

T

, T

J

STG

300 mW
417

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-50






 

 





-1

-2

-100
10

V

VGS = 0V, ID = -250µA
V

µA
µA
nA

nA

= -50V, VGS = 0V, TJ = +25°C

DS

V

= -50V, VGS = 0V, TJ = +125°C

DS

= -25V, VGS = 0V, TJ = +25°C

V

DS

V

= 20V, V

GS

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS (ON

GS(th

g

FS

-0.8
 

0.05



-2.0 V
10

 

VDS = VGS, ID = -1mA
 VGS = -5V, ID = -0.100A
S

V

= -25V, ID = -0.1A

DS

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

 

iss

C

 

oss

C

 

rss

45 pF
25 pF

V

12 pF

= -25V, V

DS

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS (Note 7)

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing

t

D(ON

t

D(OFF




10
18




ns
ns

V

= -30V, ID = -0.27A,

DD

= 50, V

R

GEN

GS

= -10V

BSS84

Document number: DS30149 Rev. 20 - 2

2 of 5

www.diodes.com

August 2013

© Diodes Incorporated