Diodes BSS138W User Manual

p

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

SOT-323

Gate

Top View

Mechanical Data

 Case: SOT-323
 Case Material: Molded Plastic, "Green" Molding Compound,

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

 Terminal Connections: See Diagram
 Weight: 0.006 grams (approximate)

Drain

Source

Equivalent Circuit

BSS138W

N-CHANNEL ENHANCEMENT MODE MOSFET

Note 6. UL Flammability Classification Rating 94V-0

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

D

GS

To

View

Ordering Information (Note 4)

Part Number Case Packaging

BSS138W -7-F SOT-323 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

K38

Shanghai A/T Site

BSS138W

Document number: DS30206 Rev. 11 - 2

K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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September 2013

© Diodes Incorporated



)

)

)

)

BSS138W

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Gate-Source Voltage Continuous
Drain Current (Note 6) Continuous

V

DSS

V

DGR

V

GSS

I

D

50 V
50 V

20

V

200 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

, T

T

J

STG

200 mW
625

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

50 75

DSS

 
 

V



0.5 µA

100

nA

VGS = 0V, ID = 250A
V

= 50V, VGS = 0V

DS

V

= 20V, V

GS

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS (ON

GS(th

g

0.5 1.2 1.5 V

1.4 3.5



100

FS

 

VDS = VGS, ID = 250A



VGS = 10V, ID = 0.22A

mS

V

= 25V, ID = 0.2A, f = 1.0KHz

DS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

 

C

iss

 

C

oss

 

C

rss

50 pF
25 pF

8.0 pF

V

DS

= 10V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS(Note 8)

Turn-On Delay Time

Notes: 5. RGS  20K.

6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

BSS138W

Document number: DS30206 Rev. 11 - 2

t

 

D(ON

t

 

D(OFF

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20 ns
20 ns

= 30V, ID = 0.2A,

V

DD

R

= 50 Turn-Off Delay Time

GEN

September 2013

© Diodes Incorporated

RAIN-SOUR

CE C

U

R

R

N

T

R

OUR

CE CUR

RENT

GATE THRESH

O

OLTAG

R

TAT

C

R

OUR

C

0.6

T = 25 C

°

j

0.5

(A)
E

0.4

0.3

0.2

D

I, D

0.1

0

1

0

Fig. 1 Drain-Source Current vs. Drain-Source Voltage

32

V , DRAIN-SOURCE VOLTAGE (V)

DS

5

47

6

2.45

2.25

2.05



1.85

1.65

V = 10V

GS

I = 0.5A

D

1.45

1.25

ON RESISTANCE ( )

DS(ON)

R , NORMALIZED DRAIN-SOURCE

1.05

0.85

0.65

-55

-5

T, JUNCTION TEMPERATURE (°C)

j

45

V = 4.5V

GS

I = 0.075A

D

95

Fig. 3 Drain-S ource On Resi st ance vs. Ju nct i on Temperature

8

910

145

BSS138W

0.8

V = 1V

DS

0.7

(A)

0.6

0.5

0.4

0.3

AIN-S

0.2

D

I, D

0.1

0

01

V , GATE-SOURCE VOLTAGE (V)

1.50.5 2 3.5

GS

Fig. 2 Transfer Characteristics

2

1.8

E (V)

1.6

1.4

1.2

LD V

1

0.8

0.6

0.4

GS(th)

0.2

V,

0

-55

Fig. 4 Gate Threshold Voltage vs. Junction Temperature

5-25 35 9565

T, JUNCTION TEMPERATURE (°C)

j

3

I = 1.0mA

D

125

-55 C

150 C

4

°

25 C

°

°

4.52.5

155

8

V = 2.5V

GS

7

150 C

°

6



5

25 C

°

4

E

AIN-S
D

I

9

V = 2.75V

GS

8

150 C

°

7



6
5

25 C

°

4

3

-55 C

°

DS(ON)

R , STATIC DRAIN-SOURCE

ON RESISTANCE ( )

2

1

0

0.02 0.04 0.06 0.08 0.160.140.120.1

0

I , DRAIN CURRENT (A)

D

Fig. 5 Drain-Source On Resistance vs. Drain Current

BSS138W

Document number: DS30206 Rev. 11 - 2

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3

, S

ON RESISTANCE ( )

2

DS(ON)

1
0

0

0.05 0.1
I , DRAIN CURRENT (A)

D

0.15 0.25

0.2

Fig. 6 Drain-Source On Resistance vs. Drain Current

-55 C

°

September 2013

© Diodes Incorporated

R

TATIC D

R

N

OUR

C

5

R

TATIC DR

OUR

C

O

CUR

RENT

C

, CAPACITAN

C

pF)

E

-S

6

V = 4.5V

GS

150 C

°

5



4

AI

3.

V = 10V

GS

3

E

2.5



AIN-S

2

150 C

3

25 C

2

, S

ON RESISTANCE ( )

DS(ON)

1

0

0

Fig. 7 Drain-S ource On R esistance vs. Drain Cu r r ent

0.1 0.2 0.3 0.4 0.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

-55 C

1

°

°

1.5

, S

ON RESISTANCE ( )

1

DS(ON)

0.5

0

0

Fig. 8 Drain-Source On Resistance vs. Drain Current

100

0.1 0.2

V = 0V

GS

f = 1MHz

I , DRAIN CURRENT (A)

D

0.3 0.4 0.5

BSS138W

°

25 C

°

-55 C

°

(A)

0.1

DE

150 C

°

25 C

°

0.01

D

I, DI

0.001

00.20.4
V , DIODE FORWARD VOLTAGE (V)

SD

0.6

Fig. 9 Body Diode Current vs. Body Diode Voltage

Package Outline Dimensions

K

J

A

B

G
H

D

-55 C

°

0.8 1 1.2

C

L

C

iss

E (

10

C

oss

C

rss

1

0 5 10 15 20 25

V , DRAIN SOURCE VOLTAGE (V)

DS

30

Fig. 10 Cap acitanc e vs. Drain So ur ce Voltage

SOT-323

Dim Min Max Typ

A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15

J 0.0 0.10 0.05

M

K 0.90 1.00 0.95

L 0.25 0.40 0.30

M 0.10 0.18 0.11

0° 8° -



All Dimensions in mm

BSS138W

Document number: DS30206 Rev. 11 - 2

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BSS138W

Suggested Pad Layout

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

BSS138W

Document number: DS30206 Rev. 11 - 2

Y

Z

X

E

C

IMPORTANT NOTICE

LIFE SUPPORT

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Dimensions Value (in mm)

Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0

September 2013

© Diodes Incorporated