Diodes BSS138W User Manual

p

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

SOT-323

Gate

Top View

Mechanical Data

 Case: SOT-323
 Case Material: Molded Plastic, "Green" Molding Compound,

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

 Terminal Connections: See Diagram
 Weight: 0.006 grams (approximate)

Drain

Source

Equivalent Circuit

BSS138W

N-CHANNEL ENHANCEMENT MODE MOSFET

Note 6. UL Flammability Classification Rating 94V-0

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

D

GS

To

View

Ordering Information (Note 4)

Part Number Case Packaging

BSS138W -7-F SOT-323 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

K38

Shanghai A/T Site

BSS138W

Document number: DS30206 Rev. 11 - 2

K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

www.diodes.com

September 2013

© Diodes Incorporated



)

)

)

)

BSS138W

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Gate-Source Voltage Continuous
Drain Current (Note 6) Continuous

V

DSS

V

DGR

V

GSS

I

D

50 V
50 V

20

V

200 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

, T

T

J

STG

200 mW
625

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

50 75

DSS

 
 

V



0.5 µA

100

nA

VGS = 0V, ID = 250A
V

= 50V, VGS = 0V

DS

V

= 20V, V

GS

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS (ON

GS(th

g

0.5 1.2 1.5 V

1.4 3.5



100

FS

 

VDS = VGS, ID = 250A



VGS = 10V, ID = 0.22A

mS

V

= 25V, ID = 0.2A, f = 1.0KHz

DS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

 

C

iss

 

C

oss

 

C

rss

50 pF
25 pF

8.0 pF

V

DS

= 10V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS(Note 8)

Turn-On Delay Time

Notes: 5. RGS  20K.

6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

BSS138W

Document number: DS30206 Rev. 11 - 2

t

 

D(ON

t

 

D(OFF

2 of 5

www.diodes.com

20 ns
20 ns

= 30V, ID = 0.2A,

V

DD

R

= 50 Turn-Off Delay Time

GEN

September 2013

© Diodes Incorporated