Diodes BSS138DW User Manual

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

I

max

D

V

R

(BR)DSS

50V

3.5Ω @ V

DS(ON)

max

= 10V

GS

TA = +25°C

200mA

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

 Load Switch

SOT-363

TOP VIEW

BSS138DW

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Notes 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT-363
 Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.006 grams (approximate)

D

2

S

2

TOP VIEW

Internal Schematic

S

G

1

1

D

G

1

2

Ordering Information (Note 4)

Part Number Case Packaging

BSS138DW-7-F SOT-363 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

K38

YM

Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019

Code S T U V W X Y Z A B C D E F G

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

YM

K38

K38

YM

YM

K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

K38

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

BSS138DW

Document number: DS30203 Rev. 13 - 2

1 of 6

www.diodes.com

January 2014

© Diodes Incorporated

)

)

)

)

BSS138DW

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol BSS138DW Units

Drain-Source Voltage
Drain-Gate Voltage (Note 7)
Gate-Source Voltage Continuous
Drain Current (Note 5) Continuous

V

DSS

V

DGR

V

GSS

ID

50 V
50 V

20

V

200 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol BSS138DW Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

R

TJ, T

PD

θJA

STG

200 mW
625

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

50 75

DSS

 
 



0.5 µA

100

V

VGS = 0V, ID = 250μA
V

= 50V, VGS = 0V

DS

nA

VGS = 20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

GS(th

R

DS (ON

gFS

0.5 1.2 1.5 V

100

1.4 3.5 Ω

 



VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.22A

mS

V

=25V, ID = 0.2A, f = 1.0KHz

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C
C

oss

C

rss

 

iss

 

 

50 pF
25 pF

8.0 pF

VDS = 10V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

6. Short duration pulse test used to minimize self-heating effect.
 20K.

7. R

GS

t

D(ON

t

D(OFF

 
 

20 ns
20 ns

V

= 30V, ID = 0.2A,

DD

R

= 50Ω

GEN

BSS138DW

Document number: DS30203 Rev. 13 - 2

2 of 6

www.diodes.com

January 2014

© Diodes Incorporated