Diodes BSS138 User Manual

q

p

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

SOT23

Gate

Top View

Drain

uivalent Circuit

E

BSS138

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

D

Source

G

To

S

View

Ordering Information

Part Number Qualification Case Packaging

BSS138-7-F Commercial SOT23 3000/Tape & Reel

BSS138Q-7-F Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

(Note 4)

Marking Information

Date Code Key

Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

BSS138

Document number: DS30144 Rev. 20 - 2

Chengdu A/T Site

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017

Shanghai A/T Site

www.diodes.com

K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

November 2013

© Diodes Incorporated

±

±

θ

)

)

)

)

R

OUR

CE C

URR

T

D

RAIN-SOUR

CE CUR

REN

T

BSS138

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage RGS ≤ 20KΩ V

Gate-Source Voltage Continuous
Gate-Source Voltage Non repetitive, Pulse width<50μs
Drain Current Continuous
Pulsed Drain Current (10μs pulse duty cycle = 1%)

V

DSS

DGR

V

GSS

I

D

I

DM

50 V
50 V

20
40

V
V

200 mA

1 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

P

D

R

JA

T

, T

J

STG

300 mW
417

-55 to +150

°C/W

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

50 75

⎯ ⎯
⎯ ⎯

V

⎯

0.5 µA

±100

nA

VGS = 0V, ID = 250μA
V

= 50V, VGS = 0V

DS

VGS = ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS (ON

GS(th

g

0.5 1.2 1.5 V

100

1.4 3.5
⎯ ⎯

FS

⎯

VDS = VGS, ID = 250μA

Ω VGS = 10V, ID = 0.22A

mS

V

= 25V, ID = 0.2A, f = 1.0KHz

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

⎯ ⎯

rss

50 pF
25 pF

8.0 pF

V

DS

= 10V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

t

⎯ ⎯

D(ON

t

⎯ ⎯

D(OFF

20 ns
20 ns

V

= 30V, ID = 0.2A, R

DD

GEN

= 50Ω

(A)

EN

0.6

0.5

0.4

0.3

T = 25 Cj°

V = 3.5V

GS

V = 3.25V

GS

V = 3.0V

GS

V = 2.75V

GS

0.8

V = 1V

0.7

DS

(A)

0.6

-55 C

°

25 C

°

0.5

150 C

0.4

°

0.2

V = 2.5V

AIN-S

0.1

D

I, D

0

010

Fig. 1 Drain-Source Current vs. Drain-Source Voltage

2

345678

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

91

0.3

0.2

D

I,

0.1

0

0

0.5

11.5

V , GATE-SOURCE VOLTAGE (V)

GS

23.5

2.5

3

4.5

4

Fig. 2 Transfer Characteristics

BSS138

Document number: DS30144 Rev. 20 - 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated