Page 1
q
p
Product Summary
I
D
TA = +25°C
70mA
V
(BR)DSS
600V
R
160Ω @ V
DS(ON)
GS
= 10V
Package
SC59
SOT23
Description
This new generation uses advanced planar technology MOSFET,
provide excellent high Voltage and fast switching, making it ideal for
small-signal and level shift applications.
Applications
• Motor Control
• Backlighting
• DC-DC Converters
• Power Management Functions
SOT23
Top View
SC59
Gate
uivalent Circuit
E
BSS127
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Features
• Low Input Capacitance
• High BVDss rating for power application
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SC59 / SOT23
• Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Drain
D
G
Source
To
S
View
e3
Ordering Information (Note 4)
Part Number Case Packaging
BSS127SSN-7 SC59 3000/Tape & Reel
BSS127S-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
K29
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23 SC59
K28 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
YM
K29 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
K28
YM
BSS127
Document number: DS35476 Rev. 6 - 2
1 of 6
www.diodes.com
January 2013
© Diodes Incorporated
Page 2
)
g
g
g
)
r
)
r
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 5) VGS = 5V
Continuous Drain Current (Note 6) VGS = 5V
Steady
State
Steady
State
Steady
State
Steady
State
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
V
V
Pulsed Drain Current @ TSP = +25°C (Notes 7) IDM
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation, @TA = +25°C (Note 5) PD
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5) R
Power Dissipation, @TA = +25°C (Note 6) PD
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6) R
Operating and Storage Temperature Range
θJA
θJA
T
, T
J
STG
DSS
GSS
I
D
I
D
I
D
I
D
600 V
±20 V
50
40
70
55
45
35
65
50
0.16 A
0.61 W
204 °C/W
1.25 W
100 °C/W
-55 to +150 °C
BSS127
mA
mA
mA
mA
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Body Leakage
BV
DSS
I
GSS
DSS
600 — — V
— — 0.1 µA
— — ±100 nA
VGS = 0V, ID = 250µA
V
= 600V, VGS = 0V
DS
VGS = ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS(ON)
|Y
V
SD
|
fs
3 — 4.5 V
— 80 160
— 95 190
— 76 — mS
— — 1.5 V
VDS = VGS, ID = 250µA
V
= 10V, ID = 16mA
Ω
GS
V
= 5.0V, ID = 16mA
GS
VDS = 10V, ID = 16mA
VGS = 0V, IS = 16mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
C
C
C
Q
Q
t
D(on
t
D(off
iss
oss
rss
Q
s
d
t
t
f
T
r
Q
r
— 21.8 —
— 2.2 —
pF
V
DS
— 0.3 —
— 1.08 —
— 0.08 —
— 0.50 —
— 5.0 — ns
— 7.2 — ns
— 28.7 — ns
— 168 — ns
— 131 — ns
— 32 — nC
nC
V
GS
I
= 0.01A
D
V
DD
R
GEN
= 10mA
I
D
V
R
di/dt = 100A/µs
= 25V, V
= 0V, f = 1.0MHz
GS
= 10V, VDD = 300V,
= 300V, VGS = 10V,
= 6Ω,
=300 V, IF =0.016 A,
BSS127
Document number: DS35476 Rev. 6 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated
Page 3
RAIN CUR
REN
T
R,DR
OUR
ON-R
GATE THR
H
O
O
TAG
0.030
0.025
0.020
0.015
0.010
D
I , DRAIN CURRENT
0.005
0.000
1000
Ω
0246810
V , DRAIN -SOURCE VOLTAGE(V)
DS
Figure 1 Typical Output Characteristics
V = 10V
GS
BSS127
100
V = 10V
DS
(mA)
10
D
I, D
1
12345
V , GATE SOURCE VOLTAGE(V)
GS
Figure 2 Typical Transfer Characteristics
250
T=85
°
C
A
T=125
ESISTANCE( )
100
CE
AIN-S
T=-55CA°
DS(ON)
10
0 5 10 15 20 25 30
I , DRAIN SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Temperature
4
E (V)
3.5
L
3
LD V
ES
2.5
I= 250ADμ
T =150
°
C
A
°
C
A
200
150
100
T=25A°
C
(Normalized)
50
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 4 On-Resistance Variation with Temperat ure
°
100
T = 150 CA°
T= 125CA°
T= 25CA°
10
T= 85CA°
2
T= -55CA°
1.5
GS(th)
V,
1
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
°
Figure 5 Gate Threshold Variation vs. Ambient Temperature
S
I , SOURCE CURRENT (A)
1
0.1 0.3 0.5 0.7 0.9 1.1
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 6 Diode Forward Voltage vs. Current
BSS127
Document number: DS35476 Rev. 6 - 2
3 of 6
www.diodes.com
January 2013
© Diodes Incorporated
Page 4
R
R
OUR
CE O
R
TANC
C, CAPACITAN
C
500
Ω
400
300
200
100
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0 0.005 0.01 0.015 0.02 0.025
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 7 Typical On-Resistance vs. Drain Current and Gate Voltage
50
45
f = 1MHz
40
BSS127
200
Ω
180
E ( )
160
140
ESIS
120
N-
100
80
60
AIN-S
40
, D
20
DS(ON)
0
23456 78910
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 8 Typical Transfer Characteristic
10
V =25V, I =250mA
DS D
8
R() Ave @ I = 20mA
Ω
DS(ON) D
35
E (pF)
30
25
20
15
T
10
C
5
0
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
RSS
Figure 9 Typical Junction Capacitance
1
D = 0.5
D = 0.3
D = 0.7
0.1
D = 0.1
D = 0.05
GS
V (V)
6
C
ISS
4
2
C
OSS
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Q - (nC)
G
Figure 10 Gate Charge Characteristics
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
r(t), TRANSIENT THERMAL RESISTANCE
D = Sing le Pulse
R(t)=r(t) * R
θθ
JA JA
R =164C/W
θ
JA
Duty Cycle, D=t1/ t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
BSS127
Document number: DS35476 Rev. 6 - 2
4 of 6
www.diodes.com
January 2013
© Diodes Incorporated
Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SC59
A
SOT23
G
H
K
J
D
A
C
B
N
L
M
K
J
H
F
D
G
C
B
K1
L
M
Dim Min Max Typ
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SC59
BSS127
Document number: DS35476 Rev. 6 - 2
Y
Z
X E
C
5 of 6
www.diodes.com
Dim Min Max Typ
A 0.35 0.50 0.38
B
C
D
G
H
J
K
L
M
N 0.70 0.80 0.75
α
All Dimensions in mm
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
All Dimensions in mm
Dimensions Value (in mm)
SC59
1.50 1.70 1.60
2.70 3.00 2.80
- - 0.95
- - 1.90
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
0° 8° -
SOT23
0° 8° -
Z 3.4
X 0.8
Y 1.0
C
E
2.4
1.35
BSS127
January 2013
© Diodes Incorporated
Page 6
BSS127
Suggested Pad Layout (cont.)
SOT23
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
Y
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C
E
2.0
1.35
BSS127
Document number: DS35476 Rev. 6 - 2
6 of 6
www.diodes.com
January 2013
© Diodes Incorporated
Loading...