Diodes BSS127 User Manual

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p

Product Summary

I

D

TA = +25°C

70mA

V

(BR)DSS

600V

R

160Ω @ V

DS(ON)

GS

= 10V

Package

SC59

SOT23

Description

This new generation uses advanced planar technology MOSFET,

provide excellent high Voltage and fast switching, making it ideal for

small-signal and level shift applications.

Applications

• Motor Control

• Backlighting

• DC-DC Converters

• Power Management Functions

SOT23

Top View

SC59

Gate

uivalent Circuit

E

BSS127

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Features

• Low Input Capacitance

• High BVDss rating for power application

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC59 / SOT23

• Case Material: Molded Plastic “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Drain

D

G

Source

To

S

View

e3

Ordering Information (Note 4)

Part Number Case Packaging

BSS127SSN-7 SC59 3000/Tape & Reel

BSS127S-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

K29

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23 SC59

K28 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

YM

K29 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

K28

YM

BSS127

Document number: DS35476 Rev. 6 - 2

1 of 6

www.diodes.com

January 2013

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 5) VGS = 5V

Continuous Drain Current (Note 6) VGS = 5V

Steady

State

Steady

State

Steady

State

Steady

State

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V
V

Pulsed Drain Current @ TSP = +25°C (Notes 7) IDM

Thermal Characteristics

Characteristic Symbol Value Units

Power Dissipation, @TA = +25°C (Note 5) PD
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5) R
Power Dissipation, @TA = +25°C (Note 6) PD
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6) R
Operating and Storage Temperature Range

θJA

θJA

T

, T

J

STG

DSS

GSS

I

D

I

D

I

D

I

D

600 V
±20 V

50
40

70
55

45
35

65
50

0.16 A

0.61 W
204 °C/W

1.25 W
100 °C/W

-55 to +150 °C

BSS127

mA

mA

mA

mA

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Body Leakage

BV

DSS

I

GSS

DSS

600 — — V

— — 0.1 µA
— — ±100 nA

VGS = 0V, ID = 250µA
V

= 600V, VGS = 0V

DS

VGS = ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y
V

SD

|

fs

3 — 4.5 V
— 80 160
— 95 190
— 76 — mS
— — 1.5 V

VDS = VGS, ID = 250µA
V

= 10V, ID = 16mA

Ω

GS

V

= 5.0V, ID = 16mA

GS

VDS = 10V, ID = 16mA
VGS = 0V, IS = 16mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.

7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

C
C
C

Q

Q

t

D(on

t

D(off

iss

oss

rss

Q

s

d

t

t

f

T

r

Q

r

— 21.8 —
— 2.2 —

pF

V

DS

— 0.3 —
— 1.08 —
— 0.08 —
— 0.50 —
— 5.0 — ns
— 7.2 — ns
— 28.7 — ns
— 168 — ns
— 131 — ns
— 32 — nC

nC

V

GS

I

= 0.01A

D

V

DD

R

GEN

= 10mA

I

D

V

R

di/dt = 100A/µs

= 25V, V

= 0V, f = 1.0MHz

GS

= 10V, VDD = 300V,

= 300V, VGS = 10V,

= 6Ω,

=300 V, IF =0.016 A,

BSS127

Document number: DS35476 Rev. 6 - 2

2 of 6

www.diodes.com

January 2013

© Diodes Incorporated