Diodes BSS123W User Manual

Product Summary

I

V

R

(BR)DSS

100V

6.0Ω @ V

DS(ON)

GS

= 10V

D

TA = +25°C

170mA

Description

This MOSFET has been designed to minimize the on-state

resistance (R

making it ideal for high efficiency power management applications.

) and yet maintain superior switching performance,

DS(ON)

Applications

 Small Servo Motor Control

 Power MOSFET Gate Drivers

Switching Applications

SOT323

Top View

Gate

Equivalent Circuit

BSS123W

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 High Drain-Source Voltage Rating

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic, "Green" Molding Compound, UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

Drain

D

G

Source

Top View

S

e3

Ordering Information (Notes 4 & 5)

Part Number Compliance Case Packaging

BSS123W-7-F Standard SOT323 3000/Tape & Reel

BSS123WQ-7-F Automotive SOT323 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

Date Code Key

Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code N P R S T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

K23

Shanghai A/T Site

YM

BSS123W

Document number: DS30368 Rev. 11 - 2

K23 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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October 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Drain-Gate Voltage RGS  20KΩ V

Gate-Source Voltage Continuous

Drain Current (Note 6) Continuous
Pulsed

V

V

DSS

DGR

GSS

I

D

IDM

100 V

100 V

20

170
680

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

P

D

R

θJA

T

, T

J

STG

200 mW

625 °C/W

-55 to +150 °C

BSS123W

V

mA

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward

BV

I

I

GSSF

DSS

100

DSS

 

 

 

1.0
10

50 nA

V

VGS = 0V, ID = 250µA

V

µA

DS

nA

V

DS

VGS = 20V, V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Drain-Source Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

gFS

0.8 1.4 2.0 V







80 370



SD

0.84 1.3 V

6.0
10



VDS = VGS, ID = 1mA

VGS = 10V, ID = 0.17A

Ω

VGS = 4.5V, ID = 0.17A

mS

V

DS

VGS = 0V, IS = 0.34A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss







29 60 pF

10 15 pF

2 6 pF

VDS = 25V, V

SWITCHING CHARACTERISTICS(Note 8)

Turn-On Rise Time

Turn-Off Fall Time

Turn-On Delay Time

Turn-Off Delay Time

Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

BSS123W

Document number: DS30368 Rev. 11 - 2

tr  

tf  

t

 

D(ON)

 

t

D(OFF)

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8 ns

16 ns

8 ns

13 ns

V
R

DD

GEN

= 100V, VGS = 0V
= 20V, VGS = 0V

= 0V

DS

= 10V, ID = 0.17A, f = 1.0KHz

= 0V, f = 1.0MHz

GS

= 30V, ID = 0.28A,

= 50Ω, VGS = 10V

October 2013

© Diodes Incorporated