Diodes BSS123 User Manual

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BSS123

Product Summary

(BR)DSS

100V

6.0 @ V

DS(ON)

= 10V

TA = +25°C

Description

These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology.These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as:

Applications

 Small Servo Motor Control  Power MOSFET Gate Drivers  Switching Applications

ADVANCE INFORMATION

SOT23

Top View

0.17

Drain

Gate

Equivalent Circuit

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23  Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram  Weight: 0.008 grams (approximate)

Source

Top View

Ordering Information (Note 4)

BSS123-7-F Commercial SOT23 3,000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Part Number Qualification Case Packaging

BSS123Q-13 Automotive SOT23 10,000 / Tape & Reel

BSS123Q-7 Automotive SOT23 3,000 / Tape & Reel

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K23

Chengdu A/T Site

K23

Shanghai A/T Site

BSS123

Document number: DS30366 Rev. 18 - 2

K23 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

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BSS123

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Continuous

Continuous Drain Current (Note 5) VGS = 10V

Continuous

Pulsed

V V

DSS GSS

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Max Unit

Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R Operating and Storage Temperature Range

JA

, T

STG

Electrical Characteristics (@T

ADVANCE INFORMATION

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current Gate-Source Leakage , Forward

DSS

GSSF

100 — — V

— — — — 10 nA — —

0.1 µA

50 nA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance

GS(th)

DS (ON)

0.8 1.4 2.0 V — — — —

6.0 10



Forward Transfer Admittance gFS 80 370 — mS Diode Forward Voltage

- 0.84 1.3 V DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance

iss

oss

rss

— — 10 15 —

29 60

2 6 SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

D(on)

D(off)

BSS123

Document number: DS30366 Rev. 18 - 2

— — — — 8 ns — — — —

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8 ns

13 ns 16 ns

100 V ±20 V 170 680

300 mW 417 °C/W

-55 to +150 °C

VGS = 0V, ID = 250µA V

= 100V, VGS = 0V

= 20V, VGS = 0V

= 20V, VDS = 0V

VDS = VGS, ID = 1mA V

= 10V, ID = 0.17A

= 4.5V, ID = 0.17A

=10V, ID = 0.17A, f = 1.0KHz

VGS = 0V, IS = 0.34A,

= 25V, VGS = 0V, f = 1.0MHz

= 10V, VDD = 30V,

= 0.28A, R

GEN

= 50

August 2013

OUR

CE C

URRENT

THRESH

OLTAG

R NO

ON-R

TANC

C, C

BSS123

0.7

0.6

(A)

0.5

2.4

2.0

0.4

MALIZED

1.6

0.3

0.2

AIN-S

I, D

0.1

134

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

1.2

ADVANCE INFORMATION

V =

I = 250µA

1.1

LD V

0.9

, N

DS(ON)

1.2

DRAIN-SOURCE ON-RESISTANCE

0.8

0.1 0.2 I , DRAIN-SOURCE CURRENT (A)

0.3 0.4 0.5 0.6

Fig. 2 On-Resistance Variation with Gate Voltage

and Drain-Source Curren t

2.2

V = 10V

I = 170m

1.8

ESIS

1.6

1.4

1.2

MALIZED

0.8

GS(th),

V N

0.7

-25

-50 T , JUNCTION TEMPERATURE (ºC)

25 50

75 100

Fig. 3 Gate Threshold Variation with Temperature

125 150

0.8

0.6

DS(ON),

0.4

-25 25

-50 0 T , JUNCTION TEMPERATURE (ºC)

75 100 125 150

Fig. 4 On-Resistance Variation with Temperature

) E (p

AN I

05 15

V , DRAIN-SOURCE VOLTAGE (V)

iss

oss

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Fig. 5 Typical Capacitance

BSS123

Document number: DS30366 Rev. 18 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

Dim Min Max Typ

SOT23

A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

0° 8° -



All Dimensions in mm

BSS123

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

BSS123

Document number: DS30366 Rev. 18 - 2

Dimensions Value (in mm)

Z 2.9 X 0.8 Y 0.9 C E

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2.0

1.35

August 2013

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCE INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

BSS123

Document number: DS30366 Rev. 18 - 2

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Diodes BSS123 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual