Diodes BSS123 User Manual
M
BSS123
Product Summary
V
R
(BR)DSS
100V
6.0 @ V
DS(ON)
GS
= 10V
TA = +25°C
Description
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as:
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
ADVANCE INFORMATION
SOT23
Top View
I
D
0.17
Drain
Gate
Equivalent Circuit
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
D
GS
Source
Top View
e3
Ordering Information (Note 4)
BSS123-7-F Commercial SOT23 3,000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Part Number Qualification Case Packaging
BSS123Q-13 Automotive SOT23 10,000 / Tape & Reel
BSS123Q-7 Automotive SOT23 3,000 / Tape & Reel
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K23
Chengdu A/T Site
YM
K23
Shanghai A/T Site
YM
BSS123
Document number: DS30366 Rev. 18 - 2
K23 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
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August 2013
© Diodes Incorporated
BSS123
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage Continuous
Continuous Drain Current (Note 5) VGS = 10V
Continuous
Pulsed
V
V
DSS
GSS
I
I
DM
D
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range
P
D
JA
T
, T
J
STG
Electrical Characteristics (@T
ADVANCE INFORMATION
Characteristic Symbol Min Typ Max Unit Test Condition
= +25°C, unless otherwise specified.)
A
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage , Forward
BV
I
DSS
I
DSS
GSSF
100 — — V
— —
— — 10 nA
— —
0.1 µA
50 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS(th)
R
DS (ON)
0.8 1.4 2.0 V
— —
— —
6.0
10
Forward Transfer Admittance gFS 80 370 — mS
Diode Forward Voltage
V
SD
- 0.84 1.3 V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
—
— 10 15
—
29 60
pF
2 6
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
t
D(on)
t
D(off)
t
r
t
f
BSS123
Document number: DS30366 Rev. 18 - 2
— —
— — 8 ns
— —
— —
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www.diodes.com
8 ns
13 ns
16 ns
100 V
±20 V
170
680
300 mW
417 °C/W
-55 to +150 °C
VGS = 0V, ID = 250µA
V
= 100V, VGS = 0V
DS
V
= 20V, VGS = 0V
DS
V
= 20V, VDS = 0V
GS
VDS = VGS, ID = 1mA
V
= 10V, ID = 0.17A
GS
V
= 4.5V, ID = 0.17A
GS
=10V, ID = 0.17A, f = 1.0KHz
V
DS
VGS = 0V, IS = 0.34A,
V
= 25V, VGS = 0V, f = 1.0MHz
DS
V
= 10V, VDD = 30V,
GS
= 0.28A, R
I
D
GEN
= 50
August 2013
© Diodes Incorporated
mA
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