Diodes BSP75N User Manual

BSP75N
60V self-protected low-side IntellifetTM MOSFET switch

Summary

Continuous drain source voltage VDS=60V

On-state resistance 500m⍀

Maximum nominal load current

Minimum nominal load current

Clamping energy 550mJ

(a)

1.1A (VIN = 5V)

(c)

0.7A (VIN = 5V)

Description

Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
functionality. Intended as a general purpose switch.

S

SOT223

S

D

IN

Features

• Short circuit protection with auto restart

• Over-voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current protection

• Input protection (ESD)

• High continuous current rating

• Load dump protection (actively protects load)

• Logic level input

Note:

The tab is connected to the source pin and must
be electrically isolated from the drain pin.
Connection of significant copper to the drain pin
is recommended for best thermal performance.

Ordering information

Device Reel size

(inches)

BSP75NTA 7 12mm embossed 1000

Tape width

(mm)

Quantity per reel

Device marking

BSP75N

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Functional block diagram

Over voltage

protection

BSP75N

D

IN

Human body

ESD protection

Over current

protection

Over temperature

protection

Logic

dV/dt

limitation

S

Applications

• Especially suited for loads with a high in-rush current such as lamps and motors.

• All types of resistive, inductive and capacitive loads in switching applications.

• ␮C compatible power switch for 12V and 24V DC applications.

• Automotive rated.

• Replaces electromechanical relays and discrete circuits.

Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low
Vds, in order not to compromise the load current during normal operation. The design maximum
DC operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not compromise the products
ability to self protect itself at low V

DS

.

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BSP75N

Absolute maximum ratings

Parameter Symbol Limit Unit

Continuous drain-source voltage V

Drain-source voltage for short circuit protection V

Drain-source voltage for short circuit protection V

= 5V V

IN

= 10V V

IN

Continuous input voltage V

Peak input voltage V

Operating temperature range T

Storage temperature range T

Power dissipation at T

Power dissipation at T

=25°C

A

=25°C

A

Continuous drain current @ V

Continuous drain current @ V

Continuous drain current @ V

Continuous source current (body diode)

Pulsed source current (body diode)

(a)

(c)

=10V; TA=25°C

IN

=5V; TA=25°C

IN

=5V; TA=25°C

IN

(a)

(b)

(a)

(a)

(c)

Unclamped single pulse inductive energy E

Load dump protection V

Electrostatic discharge (human body model) V

DS

DS(SC)

DS(SC)

IN

IN

,

j

stg

P

D

P

D

I

D

I

D

I

D

I

S

I

S

AS

LoadDump

ESD

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 40/150/56

60 V

36 V

20 V

-0.2 ... +10 V

-0.2 ... +20 V

-40 to +150

-55 to +150

°C

°C

1.5 W

0.6 W

1.3 A

1.1 A

0.7 A

2.0 A

3.3 A

550 mJ

80 V

4000 V

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

Junction to ambient

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight

copper. Allocation of 6cm
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for connections.

(a)

(b)

(c)

2

copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.

Issue 4 - September 2006 3 www.zetex.com

© Zetex Semiconductors plc 2006

R

R

R

⍜JA

⍜JA

⍜JA

83 °C/W

45 °C/W

208 °C/W

BSP75N

Electrical characteristics (at T

= 25°C unless otherwise stated)

AMB

Parameter Symbol Min. Typ. Max. Unit Conditions
Static characteristics

Drain-source clamp voltage V

Off-state drain current I

Off-state drain current I

Input threshold voltage

(*)

Input current I

Input current I

Input current I

Static drain-source on-state

DS(AZ)

DSS

DSS

V

IN(th)

IN

IN

IN

R

DS(on)

60 70 75 V ID=10mA

0.1 3 ␮AVDS=12V, VIN=0V

315␮AVDS=32V, VIN=0V

12.1 VVDS=VGS, ID=1mA

0.7 1.2 mA VIN=+5V

1.5 2.7 mA VIN=+7V

47mAV

=+10V

IN

520 675 m⍀ VIN=+5V, ID=0.7A

resistance
Static drain-source on-state

R

DS(on)

385 550 m⍀ VIN=+10V, ID=0.7A

resistance

Current limit

Current limit

(†)

(†)

I

D(LIM)

I

D(LIM)

0.7 1.0 1.5 A VIN=+5V, VDS>5V

1.0 1.8 2.3 A VIN=+10V, VDS>5V

Dynamic characteristics

Turn-on time (V

Turn-off time (V

Slew rate on (70 to 50% V

Slew rate off (50 to 70% V

Protection functions

Required input voltage for

to 90% ID)t

IN

to 90% ID)t

IN

)-dVDS/dt

DD

)DVDS/dt

DD

(‡)

on

off

V

PROT

3.0 10 ␮sRL=22⍀, VDD=12V,

13 20 ␮sRL=22⍀, VDD=12V,

on

off

820V/␮sRL=22⍀, VDD=12V,

3.2 10 V/␮sR

4.5 V

=0 to +10V

V

IN

=+10V to 0V

V

IN

V

=0 to +10V

IN

=22⍀, V

L

V

=+10V to 0V

IN

over temperature protection

Thermal overload trip

T

JT

150 175 °C
temperature
Thermal hysteresis 1 °C

Unclamped single pulse
inductive energy T

=25°C

j

Unclamped single pulse
inductive energy T

=150°C

j

E

AS

550 mJ I

200 mJ I

D(ISO)

V

DD

D(ISO)

V

DD

=0.7A,

=32V

=0.7A,

=32V

Inverse diode

Source drain voltage V

SD

1VV

=0V, -ID=1.4A

IN

DD

=12V,

NOTES:

(*) The drain current is limited to a reduced value when V
(†) Protection features may operate outside spec for VIN<4.5V.
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.

exceeds a safe level.

DS

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BSP75N

Application information

The current-limit protection circuitry is designed to de-activate at low VDS to prevent the load
current from being unnecessarily restricted during normal operation. The design max DC
operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry (see graph on page 7 'Typical Output
Characteristic'). This does not compromise the products ability to self protect at low V

The overtemperature protection circuit trips at a minimum of 150°C. So the available package
dissipation reduces as the maximum required ambient temperature increases. This leads to the
following maximum recommended continuous operating currents.

Minimum copper area characteristics

For minimum copper condition as described in note (c)

DS

.

Max. ambient temperature T

25°C @ V

70°C @ V

85°C @ V

125°C @ V

= 5V 720 840

IN

= 5V 575 670

IN

= 5V 520 605

IN

= 5V 320 375

IN

amb

Maximum continuous current

= 5V V

V

IN

IN

= 10V

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Large copper area characteristics

For large copper area as described in note (a)

BSP75N

Max. ambient temperature T

25°C @ V

70°C @ V

85°C @ V

125°C @ V

= 5V 1140 1325

IN

= 5V 915 1060

IN

= 5V 825 955

IN

= 5V 510 590

IN

amb

Maximum continuous current

= 5V V

V

IN

IN

= 10V

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Typical characteristics

BSP75N

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Package outline - SOT223

BSP75N

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC

A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC

b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287

b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146

C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -

D 6.30 6.70 0.248 0.264 - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

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[e-mail]

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Hauppauge, NY 11788
USA

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Telephone: [phone]
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[e-mail]

Corporate Headquarters

Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom

Telephone: [phone]
Fax: [phone]
[e-mail]

For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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