Diodes BSP75N User Manual

Page 1
BSP75N 60V self-protected low-side IntellifetTM MOSFET switch
Summary
Continuous drain source voltage VDS=60V
On-state resistance 500m
Maximum nominal load current
Minimum nominal load current
Clamping energy 550mJ
(a)
1.1A (VIN = 5V)
(c)
0.7A (VIN = 5V)
Description
Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch.
S
SOT223
S
D
IN
Features
Short circuit protection with auto restart
Over-voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
High continuous current rating
Load dump protection (actively protects load)
Logic level input
Note:
The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance.
Ordering information
Device Reel size
(inches)
BSP75NTA 7 12mm embossed 1000
Tape width
(mm)
Quantity per reel
Device marking
BSP75N
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Page 2
Functional block diagram
Over voltage
protection
BSP75N
D
IN
Human body
ESD protection
Over current
protection
Over temperature
protection
Logic
dV/dt
limitation
S
Applications
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
C compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low V
.
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Page 3
BSP75N
Absolute maximum ratings
Parameter Symbol Limit Unit
Continuous drain-source voltage V
Drain-source voltage for short circuit protection V
Drain-source voltage for short circuit protection V
= 5V V
IN
= 10V V
IN
Continuous input voltage V
Peak input voltage V
Operating temperature range T
Storage temperature range T
Power dissipation at T
Power dissipation at T
=25°C
A
=25°C
A
Continuous drain current @ V
Continuous drain current @ V
Continuous drain current @ V
Continuous source current (body diode)
Pulsed source current (body diode)
(a)
(c)
=10V; TA=25°C
IN
=5V; TA=25°C
IN
=5V; TA=25°C
IN
(a)
(b)
(a)
(a)
(c)
Unclamped single pulse inductive energy E
Load dump protection V
Electrostatic discharge (human body model) V
DS
DS(SC)
DS(SC)
IN
IN
,
j
stg
P
D
P
D
I
D
I
D
I
D
I
S
I
S
LoadDump
ESD
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
60 V
36 V
20 V
-0.2 ... +10 V
-0.2 ... +20 V
-40 to +150
-55 to +150
°C
°C
1.5 W
0.6 W
1.3 A
1.1 A
0.7 A
2.0 A
3.3 A
550 mJ
80 V
4000 V
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper. Allocation of 6cm (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. (c) For a device surface mounted on FR4 board with the minimum copper required for connections.
(a)
(b)
(c)
2
copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.
Issue 4 - September 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
R
R
R
JA
JA
JA
83 °C/W
45 °C/W
208 °C/W
Page 4
BSP75N
Electrical characteristics (at T
= 25°C unless otherwise stated)
AMB
Parameter Symbol Min. Typ. Max. Unit Conditions Static characteristics
Drain-source clamp voltage V
Off-state drain current I
Off-state drain current I
Input threshold voltage
(*)
Input current I
Input current I
Input current I
Static drain-source on-state
DS(AZ)
DSS
DSS
V
IN(th)
IN
IN
IN
R
DS(on)
60 70 75 V ID=10mA
0.1 3 AVDS=12V, VIN=0V
315␮AVDS=32V, VIN=0V
12.1 VVDS=VGS, ID=1mA
0.7 1.2 mA VIN=+5V
1.5 2.7 mA VIN=+7V
47mAV
=+10V
IN
520 675 m VIN=+5V, ID=0.7A
resistance Static drain-source on-state
R
DS(on)
385 550 m VIN=+10V, ID=0.7A
resistance
Current limit
Current limit
(†)
(†)
I
D(LIM)
I
D(LIM)
0.7 1.0 1.5 A VIN=+5V, VDS>5V
1.0 1.8 2.3 A VIN=+10V, VDS>5V
Dynamic characteristics
Turn-on time (V
Turn-off time (V
Slew rate on (70 to 50% V
Slew rate off (50 to 70% V
Protection functions
Required input voltage for
to 90% ID)t
IN
to 90% ID)t
IN
)-dVDS/dt
DD
)DVDS/dt
DD
(‡)
on
off
V
PROT
3.0 10 sRL=22⍀, VDD=12V,
13 20 sRL=22⍀, VDD=12V,
on
off
820V/␮sRL=22⍀, VDD=12V,
3.2 10 V/sR
4.5 V
=0 to +10V
V
IN
=+10V to 0V
V
IN
V
=0 to +10V
IN
=22, V
L
V
=+10V to 0V
IN
over temperature protection
Thermal overload trip
T
JT
150 175 °C temperature Thermal hysteresis 1 °C
Unclamped single pulse inductive energy T
=25°C
j
Unclamped single pulse inductive energy T
=150°C
j
E
550 mJ I
200 mJ I
D(ISO)
V
DD
D(ISO)
V
DD
=0.7A,
=32V
=0.7A,
=32V
Inverse diode
Source drain voltage V
SD
1VV
=0V, -ID=1.4A
IN
DD
=12V,
NOTES:
(*) The drain current is limited to a reduced value when V (†) Protection features may operate outside spec for VIN<4.5V. (‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.
exceeds a safe level.
DS
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Page 5
BSP75N
Application information
The current-limit protection circuitry is designed to de-activate at low VDS to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see graph on page 7 'Typical Output Characteristic'). This does not compromise the products ability to self protect at low V
The overtemperature protection circuit trips at a minimum of 150°C. So the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents.
Minimum copper area characteristics
For minimum copper condition as described in note (c)
.
Max. ambient temperature T
25°C @ V
70°C @ V
85°C @ V
125°C @ V
= 5V 720 840
IN
= 5V 575 670
IN
= 5V 520 605
IN
= 5V 320 375
IN
amb
Maximum continuous current
= 5V V
V
IN
IN
= 10V
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Page 6
Large copper area characteristics
For large copper area as described in note (a)
BSP75N
Max. ambient temperature T
25°C @ V
70°C @ V
85°C @ V
125°C @ V
= 5V 1140 1325
IN
= 5V 915 1060
IN
= 5V 825 955
IN
= 5V 510 590
IN
amb
Maximum continuous current
= 5V V
V
IN
IN
= 10V
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Page 7
Typical characteristics
BSP75N
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Page 8
Package outline - SOT223
BSP75N
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - - - - -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas
Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA
Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong
Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom
Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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© Zetex Semiconductors plc 2006
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