Diodes BSP75N User Manual

BSP75N 60V self-protected low-side IntellifetTM MOSFET switch

Summary

Continuous drain source voltage VDS=60V

On-state resistance 500m⍀

Maximum nominal load current

Minimum nominal load current

Clamping energy 550mJ

(a)

1.1A (VIN = 5V)

(c)

0.7A (VIN = 5V)

Description

Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch.

S

SOT223

S

D

IN

Features

• Short circuit protection with auto restart

• Over-voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current protection

• Input protection (ESD)

• High continuous current rating

• Load dump protection (actively protects load)

• Logic level input

Note:

The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance.

Ordering information

Device Reel size

(inches)

BSP75NTA 7 12mm embossed 1000

Tape width

(mm)

Quantity per reel

Device marking

BSP75N

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Functional block diagram

Over voltage

protection

BSP75N

D

IN

Human body

ESD protection

Over current

protection

Over temperature

protection

Logic

dV/dt

limitation

S

Applications

• Especially suited for loads with a high in-rush current such as lamps and motors.

• All types of resistive, inductive and capacitive loads in switching applications.

• ␮C compatible power switch for 12V and 24V DC applications.

• Automotive rated.

• Replaces electromechanical relays and discrete circuits.

Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low V

DS

.

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BSP75N

Absolute maximum ratings

Parameter Symbol Limit Unit

Continuous drain-source voltage V

Drain-source voltage for short circuit protection V

= 5V V

IN

= 10V V

IN

Continuous input voltage V

Peak input voltage V

Operating temperature range T

Storage temperature range T

Power dissipation at T

=25°C

A

=25°C

A

Continuous drain current @ V

Continuous source current (body diode)

Pulsed source current (body diode)

(a)

(c)

=10V; TA=25°C

IN

=5V; TA=25°C

IN

=5V; TA=25°C

IN

(a)

(b)

(a)

(c)

Unclamped single pulse inductive energy E

Load dump protection V

Electrostatic discharge (human body model) V

DS

DS(SC)

IN

,

j

stg

P

D

P

D

I

D

I

D

I

D

I

S

I

S

AS

LoadDump

ESD

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 40/150/56

60 V

36 V

20 V

-0.2 ... +10 V

-0.2 ... +20 V

-40 to +150

-55 to +150

°C

1.5 W

0.6 W

1.3 A

1.1 A

0.7 A

2.0 A

3.3 A

550 mJ

80 V

4000 V

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight

copper. Allocation of 6cm (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. (c) For a device surface mounted on FR4 board with the minimum copper required for connections.

(a)

(b)

(c)

2

copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.

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R

⍜JA

83 °C/W

45 °C/W

208 °C/W