Diodes BSN20-7, BSN20Q-7 Schematic [ru]
q
p
Product Summary
V
R
(BR)DSS
50V
1.8 @ V
2.0 @ VGS = 4.5V
DS(ON)
GS
= 10V
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
Backlighting
DC-DC Converters
Power Management Functions
NEW PRODUCT
SOT23
Top View
I
D
500mA
450mA
Drain
Gate
E
uivalent Circuit
BSN20
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
D
Source
G
To
S
View
e3
Ordering Information (Note 5)
Part Number Qualification Case Packaging
BSN20-7 Standard SOT23 3000/Tape & Reel
BSN20Q-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N20
Chengdu A/T Site
YM
N20
Shanghai A/T Site
BSN20
Document number: DS31898 Rev. 8 - 2
N20 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
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September 2013
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Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
@ T
= +25°C (Note 6)
SP
Steady
State
T
= +25°C
A
= +100°C
T
A
Pulsed Drain Current @ TSP = +25°C (Notes 6 & 7) IDM
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation, @TA = +25°C (Note 6) PD
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation, @TSP = +25°C (Note 6) PD
Thermal Resistance, @TSP = +25°C (Note 6)
Operating and Storage Temperature Range
NEW PRODUCT
Electrical Characteristics (@T
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Body Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance |Yfs| 40 320
Diode Forward Voltage VSD
Source (diode forward) Current IS
Peak Source (diode forward) Current ISM
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance Rg
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
Turn-On Delay Time t
Turn-On Rise Time tr
Turn-Off Delay Time t
Turn-Off Fall Time tf
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
.
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
50
BV
DSS
DSS
I
GSS
V
GS(th)
R
DS(ON)
0.4 1.0 1.5 V
C
iss
C
oss
C
rss
D(on)
D(off)
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
V
DSS
V
GSS
I
D
50 V
20
500
300
1.2 A
600 mW
R
JA
200
920 mW
R
JSP
T
, T
J
STG
0.5 µA
100
136 °C/W
-55 to +150 °C
V
VGS = 0V, ID = 250µA
V
= 50V, VGS = 0V
DS
nA
V
= 20V, V
GS
DS
= 0V
VDS = VGS, ID = 250µA
V
1.3
1.6
1.8
2.0
mS VDS = 10V, ID = 0.1A
= 10V, ID = 0.22A
GS
= 4.5V, ID = 0.1A
V
GS
1.0 1.5 V VGS = 0V, IS = 180mA
194 mA
1.2 A
= +25°C
T
SP
T
= +25°C (Notes 3 & 4)
SP
21.8 40 pF
5.6 15 pF
V
DS
= 10V, V
= 0V, f = 1.0MHz
GS
3.3 10 pF
49
800
100
100
2.93
2.99
9.45
8.3
VDS =0V, VGS = 0V, f = 1MHz
pC
V
= 10V, VDD = 25V,
pC
pC
GS
I
= 250mA
D
ns
V
= 30V, V
ns
ns
ns
DD
= 150, R
R
L
= 0.2A
I
D
= 10V,
GEN
GEN
= 50,
BSN20
V
mA
C/W
BSN20
Document number: DS31898 Rev. 8 - 2
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September 2013
© Diodes Incorporated
O
R
C
ONT
UOUS CUR
RENT
R
CUR
RENT
T
R
T T
HER
R
TANC
C
NEW PRODUCT
BSN20
120
120
(%)
100
80
60
40
D
P , POWER DISSIPATION (%)
20
0
25 50 75 100 125 150 175
T , SOLDER POINT TEMPERATURE (°C)
S
Fig 1. No r m al ized To tal Power Dissip at ion
as a Func tion of Solder Point Tempe r at ure
1
R
ds(on)
Limited
P = DCW
(A)
AIN
D
I, D
0.1
0.01
P = 10sW
P = 1sW
P = 100msW
P = 10msW
P = 1msW
P = 100µsW
P = 10µsW
100
80
IN
60
40
MALIZED
20
0
DER
I, N
0 50 75 100 125 150 175
25
T , SOLDER POINT TEMPERATURE (°C)
S
Fig 2. Norm alize d Continuo us Curre nt
vs. Solder Point Temperature
T = 150°C
J(MAX)
T = 25°C
A
0.001
0.1 1 10 100
Single Pulse
V , DRAIN-SOURE VOLTAGE (V)
DS
Fig. 3 SOA, Safe Operation Area
1,000
/W)
E (°
100
ESIS
MAL
D = 0.5
D = 0.3
D = 0.1
10
D = 0.05
ANSIEN
th(j-sp)
Z,
D = 0.02
D = Single Pulse
Duty Cycle, D = t /t
12
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , PULSE DURATION TIME (s)
1
Fig. 4 Transient Ther m al Response
BSN20
Document number: DS31898 Rev. 8 - 2
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© Diodes Incorporated
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