Diodes BS870 User Manual
p
M
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 Standards for High Reliability
SOT23
Gate
Top View Equivalent Circuit
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain
D
Source
G
To
S
View
BS870
Ordering Information (Note 5)
Part Number Case Packaging
BS870-7-F SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Fire Retardants.
2O3
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K70
YM
BS870
Document number: DS11302 Rev. 18 - 2
K70
Shanghai A/T SiteChengdu A/T Site
YM
1 of 5
www.diodes.com
K70 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
August 2013
© Diodes Incorporated
)
)
)
)
)
BS870
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0M V
Gate-Source Voltage Continuous
Drain Current (Note 6) Continuous
V
V
DSS
DGR
GSS
I
D
60 V
60 V
20
V
250 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
300 mW
417
-55 to +150
C/W
C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
60 80
0.5 µA
10
nA
V
VGS = 0V, ID = 100A
V
= 25V, VGS = 0V
DS
VGS = 15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
V
R
DS (ON
I
D(ON
GS(th
gFS
1.0 2.0 3.0 V
0.5 1.0
80
3.5 5.0
VDS = VGS, ID = 250A
VGS = 10V, ID = 0.2A
A
VGS = 10V, VDS = 7.5V
mS
V
=10V, ID = 0.2A
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
22 50 pF
11 25 pF
2.0 5.0 pF
VDS = 10V, V
f = 1.0MHz
GS
= 0V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Notes: 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
t
D(ON
t
D(OFF
2.0 20 ns
5.0 20 ns
V
= 10V, RL = 150,
ES
VDS = 10V, RD = 100 Turn-Off Delay Time
BS870
Document number: DS11302 Rev. 18 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
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