Diodes BS250P User Manual
P-CHANNEL ENHANCEMENT
BS250P
MODE VERTICAL DMOS FET
ISSUE 2 SEPT 93
FEATURES
* 45 Volt V
*R
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS(on)
DS
=14Ω
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
D
G
S
E-Line
TO92 Compatible
-45 V
-230 mA
-3 A
±20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate Body Leakage I
Zero Gate Voltage
Drain Current
Static Drain-Source
on-State Resistance (1)
Forward
Transconductance (1)(2)
Input Capacitance (2) C
Turn-On Time (2)(3) t
Turn-Off Time (2)(3) t
(1) Measured under pulsed conditions. Pulse width=300
(3) Switching times measured with a 50
BV
V
GS(th)
GSS
I
DSS
R
DS(on)
g
fs
iss
(on)
(off)
DSS
-45 V
=-100µA, V
I
D
-1 -3.5 V ID=-1mA, VDS=V
-20 nA VGS=-15V, VDS=0V
-500 nA VGS=0V, VDS=-25V
14
Ω
VGS=-10V, ID=-200mA
150 mS VDS=-10V, ID=-200mA
60 pF VGS=0V, VDS=-10V
f=1MHz
20 ns
V
DD
≈-25V, I
20 ns
Ω source impedance and <5ns rise time on a pulse generator
µs. Duty cycle ≤ 2% (2) Sample test
3-28
=0V
GS
GS
=-500mA
D
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