Diodes BS250F User Manual

SOT23 P-CHANNEL ENHANCEMENT

BS250F

G

MODE VERTICAL DMOS FET

ISSUE 3 - JANUARY 1996

D

PARTMARKING DETAIL  MX

ABSOLUTE MAXIMUM RATINGS.

SOT23

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

=25°C I

amb

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

DS

D

DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

-45 V

-90 mA

-1.6 A

± 20

330 mW

-55 to +150 °C

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source

BV

Breakdown Voltage

Gate-Source Threshold
Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain
Current

Static Drain-Source On-State
Resistance (1)

Forward Transconductance
(1)(2)

Input Capacitance (2) C

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

V

GS(th)

GSS

I

DSS

R

DS(on)

g

fs

iss

d(on)

r

d(off)

f

(1) Measured under pulsed conditions. Width=300
(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

-45 -70 V

DSS

-1 -3.5 V ID=-1mA, VDS= V

-20 nA VGS=-15V, VDS=0V

-0.5.

µA

914ΩVGS=-10V,ID=-200mA

90 mS VDS=-10V,ID=-200mA

25 pF VDS=-10V, VGS=0V,

10 ns

10 ns

10 ns

10 ns

µs. Duty cycle ≤2% (2) Sample test.

=-100µA, V

I

D

V

=-25V, VGS=0V

DS

f=1MHz

V

≈-25V, I

DD

=0V

GS

=-200mA

D

Spice parameter data is available upon request for this device

3 - 55

S

V

GS

BS250F

BS250F

TYPICAL CHARACTERISTICS

-1.2

VGS=-20V

VGS=-20V

-1.0

)

-0.8

nt (Amps

-0.6

e

r

r

u

-0.4

C

n

i

a

r

-0.2

D

-

D

I

0

-10

-8

-6

Voltage (Volts)

-4

-2

Drain Source

0

DS-

V

-16V

-14V

-12V

-10V

-9V

-8V

-7V

0 -10 -20 -30 -40 -50

V

DS

- Drain Source Voltage (Volts)

Output Characteristics

0-2 -4-6-8-10

V

GS-

Gate Source Voltage (Volts)

Voltag e Sa turation Characteristics

-6V

ID=

-

400mA

-200mA

-100mA

-1.0

-0.8

Amps)

-0.6

t (

n

-0.4

-5V

-4V

-0.2

- Drain Curre

D

I

0

0-2 -4 -6 -8 -10

V

DS

- Drain Source Voltage (Volts)

VGS=

-14V

-12V

-10V

-9V

-8V

-7V

-6V

-5V

-4.5V

-16V

Saturation Characteristics

)

-1.0

-0.8

-0.6

Current (Amps
ain

r

-0.4

e D

t

-0.2

On-Sta

-

)
n

0

O

0-2-4-6-8-10

D(

I

VDS=-10V

V

GS-

Gate Source Voltage (Volts)

Transfer Characteristics

(Ω)

100

10

1

-10

RDS(on)-Drain Source On Resistance

On-resistance vs Drain Cur rent

VGS=-5V

-6V

-100 -1000

ID-Drain Current (mA)

2.6

2.4

S(th)

-7V

-10V

-15V

-20V

G

nd V
a

DS(on)

R

d
e

s
ali
m

Nor

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

-40

e R

rc

u

o

S

-

ain

Dr

G

ate

T

h

res

-20 0 20 40 60 80

S(o

D

R

tance

s

i

s

e

h

o

l

d

V

o

l

tag

120

100 140 160

VGS=-10V

ID=0.37A

)

n

VGS=VDS

ID=-1mA

e

V

GS

(

T

H

)

180

Junction Temperature (°C)

Normalised R

DS(on)

and V

GS(th)

vs Temperature

3 - 56