Diodes BS170F User Manual

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 3 - JANUARY 1996

FEATURES
* 60Volt V
*R

PARTMARKING DETAIL – MV

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

DS(ON)

DS

= 5Ω

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

BS170F

D

SOT23

60 V

0.15 mA
3A

± 20

330 mW

-55 to +150 °C

S

G

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source
Breakdown Voltage

Gate-Source Threshold
Voltage

Gate-Body Leakage I
Zero Gate Voltage Drain

Current
Static Drain-Source On-State

Resistance (1)
Forward Transconductance

(1)(2)
Input Capacitance (2) C

Turn-On Delay Time (2)(3) t
Turn-Off Delay Time (2)(3) t

BV

V

GS(th)

GSS

I

DSS

R

DS(on)

g

fs

iss

d(on)

d(off)

60 90 V

DSS

0.8 3 V ID=1mA, VDS= V

10 nA VGS=15V, VDS=0V

0.5

µA

5

Ω

200 mS VDS=10V, ID=200mA

60 pF VDS=10V, V

10 ns
10 ns

I

=100µA, VGS=0V

D

GS

VDS=25V, VGS=0V

VGS=10V, ID=200mA

=0V,

f=1MHz

V

DD

GS

≈-15V, ID=600mA

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs refer to ZVN3306F datasheet.

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