Diodes BS107P User Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 2 – SEPT 93

FEATURES
* 200 Volt V
*R

DS(on)

REFER TO BS107PT FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

=23Ω

DS

=25°C I

amb

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

BS107P

D
G
S

E-Line

TO92 Compatible

200 V

0.12 A
2A

±20
500 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source

Breakdown Voltage
Gate Body Leakage I
Drain Cut-Off Current I
Drain Cut-Off Current I
Static Drain-Source

on-State Resistance

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

BV

GSS

DSS

DSX

R

DS(on)

DSS

200 230 V

15 23

= 25°C)

amb

=100µA, VGS=0V

I

D

10 nA VGS=15V, VDS=0V
30 nA VGS=0V, VDS=130V
1

30

µA
Ω

Ω

VGS=0.2V, VDS=70V
VGS=2.6V, ID=25mA*

=5V, ID=100mA*

V

GS

3-23