Diodes BCX69 User Manual
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1995 ✪
FEATURES
* High gain and low saturation voltages
COMPLEMENTARY TYPE – BCX68
BCX69
C
PARTMARKING DETAIL – BCX69 – CJ
BCX69-16 – CG
BCX69-25 – CH
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PA RAM ETE R SY MBO L VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTER ISTI CS (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
-25 V
-20 V IC =-10mA
-5 V
-0.1
µA
-10
µA
-10
µA
-0.5 V IC =-1A, IB =-100mA
-1.0 V IC =-1A, VCE =-1V
50
85
375
60
BCX69-16
BCX69-25
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet.
T
obo
100
160 250
100 MHz IC =-100mA, VCE =-5V,
250
400
25 pF VCB =-10V, f=1MHz
-25 V
-20 V
-5 V
-2 A
-1 A
1W
-65 to +150 °C
IC =-100µA
I
=-100µA
E
V
=-25V
CB
V
=-25V, T
CB
amb
=150°C
VEB =-5V
I
=-5mA, VCE =-1V
C
I
=-500mA, VCE =-1V
C
I
=-1A, VCE =-1V*
C
I
=-500mA, VCE =-1V*
C
I
=-500mA, VCE =-1V
C
f=100MHz
E
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