Diodes BCX41 User Manual
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995 ✪
BCX41
PARTMARKING DETAIL EK
1
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CES
CEO
EBO
CM
C
B
TOT
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
µA
µA
µA
V
CE
V
V
CE
V
CE
T
amb
=100µA, V
I
C
=100mA, VCE =1V *
I
C
=200mA, VCE =1V *
I
C
f =20MHz
Collector-Base Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
I
CES
I
CEX
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
25
63
10010nA
10
75
100 nA VEB =4V
0.9 V IC =300mA, IB =30mA *
1.4 V IC =300mA, IB =30mA *
40
Transition Frequency f
Output Capacitance C
T
obo
100 MHz IC =10mA, VCE =5V
12 pF VCB =10V, IE=Ie=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300
µs. Duty cycle 2%
125 V
125 V
5V
1A
800 mA
100 mA
330 mW
-55 to +150 °C
=100V
=100V, T
CE
amb
=150°C
=100V,VBE=0.2V,T
=100V,VBE=0.2V,
=125°C
=1V
CE
amb
=85°C
2
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