Diodes BC857BLP4 User Manual
Features
• Epitaxial Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ultra-low Profile (0.40mm max)
• Complementary NPN Type Available (BC847BLP4)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
DFN1006H4-3
Bottom View
BC857BLP4
45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0008 grams (approximate)
C
B
E
Device Symbol
B
C
E
Top View
Device Schematic
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
BC857BLP4-7 F2 7 8 3,000
BC857BLP4-7B F2 7 8 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
BC857BLP4
Document number: DS31361 Rev. 5 - 2
BC857BLP4-7 BC857BLP4-7B
F2F2
Top View
Dot Denotes
Collector Side
Top View
Bar Denotes Base
and Emitter Side
1 of 5
www.diodes.com
F2 = Product Type Marking Code
February 2011
© Diodes Incorporated
θ
(BR)
(BR)
(BR)
BC857BLP4
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
I
C
-50 V
-45 V
-5.0 V
-100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C
Operating and Storage Temperature Range
R
T
, T
J
JA
STG
250 mW
500
-55 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes: 4. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com
5. Short duration pulse test used to minimize self-heating effect.
V
V
V
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CBO
f
T
C
CBO
-50 — — V
CBO
-45 — — V
CEO
-5 — — V
EBO
220 300 475 —
—
—
—
-600 — -670
—
—
100 — — MHz
— 3.0 — pF
-90
-250
-700
-850
-710
—
—
-300
-650
—
—
-750
-820
-15
-4.0
I
= 10μA, IB = 0
C
I
= 10mA, IB = 0
C
I
= 1μA, IC = 0
E
VCE = -5.0V, IC = -2.0mA
mV
mV
mV
nA
µA
= -100mA, IB = -5.0mA
I
C
= -10mA, IB = -0.5mA
I
C
I
= -100mA, IB = -5.0mA
C
= -5.0V, IC = -2.0mA
V
CE
= -5.0V, IC = -10mA
V
CE
V
= -30V
CB
V
= -30V, TA = 150°C
CB
V
= -5.0V, IC = -10mA,
CE
= -10mA, IB = -0.5mA
I
C
f = 100MHz
VCB = -10V, f = 1.0MHz
BC857BLP4
Document number: DS31361 Rev. 5 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
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