Diodes BC857BLP User Manual

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Features

• Epitaxial Die Construction

• Complementary NPN Type Available (BC847BLP)

• Ultra-Small Leadless Surface Mount Package

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

DFN1006-3

Bottom View Device S

BC857BLP

50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0009 grams

C

B

E

mbol

B

C

E

Top View

Pin-Out

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

BC857BLP-7 3W 7 8mm 3,000

BC857BLP-7B 3W 7 8mm 10,000

Notes: 1. No purposefully added lead.

2. Halogen and Antimony Free. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

BC857BLP

Document number: DS30526 Rev. 10 - 2

BC857BLP-7 BC857BLP-7B

3W3W

Top View

Dot Denotes

Collector Side

Top View

Bar Denotes Base

and Emitter Side

1 of 4

www.diodes.com

3W = Product Type Marking Code

February 2011

© Diodes Incorporated

θ

P, P

O

R

P

T

O

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current

V

CBO

V

CEO

V

EBO

I

C

-50 V

-45 V

-5.0 V

-100 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C
Operating and Storage Temperature Range

R

TJ, T

JA

STG

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Collector-Cutoff Current

Gain Bandwidth Product
Collector-Base Capacitance

Notes: 4. Device mounted on FR-4 PCB, Diodes Inc. suggested pad layout document can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

BV

CBO

BV

CEO

BV

EBO

hFE

V

CE(sat)

V

BE(sat)

V

BE(on)

I

CBO

fT

C

CBO

-50 — — V

-45 — — V

-5 — — V

220 260 475 —

—
—

—

-600 — -670

—
—

-90

-250

-700

-850 — —

-710
—

—

100 — — MHz

— 3.0 — pF

300

250 mW
500

-55 to +150

IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = -5.0V, IC = -2.0mA

-300

-650

-750

-820

-15

-4.0

IC = -10mA, IB = -0.5mA

mV

IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA

mV

IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA

mV

VCE = -5.0V, IC = -10mA
VCB = -30V

nA
µA

VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA,

f = 100MHz
VCB = -10V, f = 1.0MHz

BC857BLP

°C/W

°C

250

N (mW)

200

I
A

150

DISSI

100

WE

D

50

R = 500 C/W

°

θ

JA

FE

h , DC CURRENT GAIN

0

0 255075100125150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1 Power Dissipation

vs. Ambient Temperature (Note 4)

Fig. 2

I , COLLECTOR CURRENT (mA)

C

Typical DC Current Gain vs. Collector Current

BC857BLP

Document number: DS30526 Rev. 10 - 2

2 of 4

www.diodes.com

February 2011

© Diodes Incorporated