Page 1
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in One Package
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Top View Bottom View
SOT563
BC847BVN
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.003 grams (approximate)
e3
B
C
1
2
Q
1
E
B
1
1
Device Schematic
Top View
E
2
Q
2
C
2
Ordering Information (Note 4 & 5)
Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
BC847BVN-7 AEC-Q101 KAW 7 8 3000
BC847BVNQ-7 Automotive KAW 7 8 3000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
KAW
YM
KAW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code X Y Z A B C D E
2010
2011 2012 2013 2014 2015
2016 2017
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
BC847BVN
Document number: DS30627 Rev. 6 - 2
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May 2013
© Diodes Incorporated
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P, P
O
R
P
T
O
Maximum Ratings: NPN, BC847B Type (Q1) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Maximum Ratings: PNP, BC857B Type (Q2) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
= +25°C unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
IC
ICM
IEM
= +25°C unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
IC
ICM
IEM
50 V
45 V
6 V
100 mA
200 mA
200 mA
-50 V
-45 V
-6 V
-100 mA
-200 mA
-200 mA
BC847BVN
Thermal Characteristics – Total Device (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Total Device
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Note: 6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
R
TJ, T
PD
JA
STG
150 mW
833 °C/W
-65 to +150 °C
Thermal Characteristics – Total Device
200
150
N (mW)
I
A
100
DISSI
WE
D
50
R = 833 C /W
JA
0
-50
050100150
T , AMBIENT TEMPERATURE ( C)
A
°
Figure 1. Power Dissipation vs. Ambient Temperature
Total Device
BC847BVN
Document number: DS30627 Rev. 6 - 2
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May 2013
© Diodes Incorporated
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C CUR
REN
T GAIN
C
O
CTO
R
T
TER
G
T
H P
R
ODU
C
T
H
Electrical Characteristics: NPN, BC847B Type (Q1) (@T
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Note: 7. Short duration pulse test used to minimize self-heating effect.
BV
BV
BV
hFE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
C
CBO
CEO
EBO
fT
CBO
1,000
50 — — V
45 — — V
6 — — V
200 290 450 —
—
—
580
—
—
—
200
700
900
660
100 300 — MHz
— 3.5 6.0 pF
= +25°C unless otherwise specified.)
A
IC = 100µA, IB = 0
IC = 10mA, IB = 0
IE = 100µA, IC = 0
VCE = 5.0V, IC = 2.0mA
90
—
—
—
250
600
— mV
700
720
15
5.0
IC = 10mA, IB = 0.5mA
mV
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
mV
VCE = 5.0V, IC = 10mA
VCB = 30V
nA
µA
VCB = 30V, TA = +150°C
VCE = 5.0V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
0.5
I
C
I = 20
B
0.4
BC847BVN
100
10
FE,
h D
1
I , COLLECTOR CURRENT (mA)
C
1.0 10 1000.10.01
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
f = 1MHz
10
6
C
ibo
CAPACITANCE (pF)
-EMI
0.3
0.2
LLE
CE
SATURATION VOLTAGE (V)
V,
0.1
0
0.1 1.0 10 100
I , COLLECTOR CURRENT (mA)
C
T = 100CA°
T = 25CA°
T = -50CA°
Figure 3. Typical Coll ector-Emit ter Saturation Voltage
vs. Collector Current (BC847B Type)
1,000
T = 25CA°
z)
(M
V =CE5V
100
V = 10V
CE
V = CE2V
C
obo
V , REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
BC847BVN
Document number: DS30627 Rev. 6 - 2
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AIN-BANDWID
T
f,
10
0.1 1.0 10 100
I , COLLECTOR CURRENT (mA)
C
Figure 5. Typical Gain-Bandwidth Product
vs. Collector Current (BC847B Type)
May 2013
© Diodes Incorporated
Page 4
C
O
CTO
R
T
TER
CAPACIT
N
C
F
G
T
H P
R
ODUCT
H
Electrical Characteristics: PNP, BC857B Type (Q2) (@T
Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BV
BV
BV
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
V
V
V
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Note: 8. Short duration pulse test used to minimize self-heating effect.
-1,000
CBO
CEO
EBO
hFE
CE(sat)
BE(sat)
BE(on)
I
CBO
fT
C
CBO
-50 — — V
-45 — — V
-6 — — V
220 290 475 —
—
—
-600 — -650 — -750
—
—
100 200 — MHz
— 3 4.5 pF
= +25°C unless otherwise specified.)
A
IC = -100µA, IB = 0
IC = -10mA, IB = 0
IE = -100µA, IC = 0
VCE = -5.0V, IC = -2.0mA
-75
-250
-300
-650
-700
-850 — -950
-820
—
—
-15
-4.0
IC = -10mA, IB = -0.5mA
mV
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
mV
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
mV
VCE = -5.0V, IC = -10mA
VCB = -30V
nA
µA
VCB = -30V, TA = +150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
-0.5
I
C
= 10
I
B
-0.4
BC847BVN
-100
-10
FE
h , DC CURRENT GAIN
-1
-1 -10 -100
I , COLLECTOR CURRENT (mA)
C
Figure 6. Typical DC Current Gain vs. Collector Current
(BC857B Type)
f = 1MHz
)
E (p
A
10
Cibo
-1,000
-EMI
-0.3
LLE
-0.2
SATURATION VOLTAGE (V)
CE(SAT)
V,
-0.1
T = 150°C
A
0
-1-0.1 -10 -100
I , COLLECTOR CURRENT (mA)
C
T = 25°C
A
Figure 7. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
-1,000
z)
(M
-100
T = -50°C
A
-1,000
6
Cobo
V , REVERSE VOLTAGE (V)
Figure 8. Typical Capacitance Characteristics (BC857B Type)
BC847BVN
Document number: DS30627 Rev. 6 - 2
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AIN-BANDWID
t
f,
-10
-1
I , COLLECTOR CURRENT (mA)
C
-10
-100
Figure 9. Typical Gain-Bandwidth Product
vs. Collector Current (BC857B Type)
May 2013
© Diodes Incorporated
Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
K
A
B
C
D
G
M
H
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G
Z
Y
X
C2
C2
C1
Dimensions Value (in mm)
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
BC847BVN
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Z 2.2
BC847BVN
Document number: DS30627 Rev. 6 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
BC847BVN
BC847BVN
Document number: DS30627 Rev. 6 - 2
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May 2013
© Diodes Incorporated
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