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Features
• Epitaxial Die Construction
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Top View
= 25°C unless otherwise specified
A
Bottom View
BC847BVC
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.002 grams (approximate)
C1B2E
E
1
Device Schematic
V
CBO
V
CEO
V
EBO
IC
2
C
B
2
1
50 V
45 V
6.0 V
100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 5)
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage (Note 5)
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Voltage (Note 5)
Collector-Emitter Cutoff Current (Note 5)
Gain Bandwidth Product
Output Capacitance
Noise Figure NF — — 10 dB
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
BC847BVC
Document number: DS30638 Rev. 5 - 2
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
5. Short duration pulse test used to minimize self-heating effect.
A
TJ, T
= 25°C unless otherwise specified
V
V
V
hFE
V
CE(SAT)
V
BE(SAT)
VBE
I
CBO
I
CBO
C
CBO
CEO
EBO
fT
OBO
50 — — V
45 — — V
6 — — V
200 290 450 —
— —
—
580
—
— —
100 — — MHz
— — 4.5 pF
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R
PD
JA
STG
700
900
660
—
150 mW
833
-55 to +150
°C/W
°C
IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = 5.0V, IC = 2.0mA
100
300
— mV
700
770
15
5.0
IC = 10mA, IB = 0.5mA
mV
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
mV
VCE = 5.0V, IC = 10mA
VCB = 30V
nA
µA
VCB = 30V, TA = 150°C
VCE = 5.0V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
VCE = 5V, RS = 2.0kΩ,
f = 1.0kHz, BW = 200Hz
April 2009
© Diodes Incorporated
250
1,000
T = 150 C
A
°
200
(mW)
150
AIN
EN
100
T = -50C
°
A
BC847BVC
T = 25C
°
A
DISSI
100
D
50
0
-50
050100150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissip ation vs. Ambi ent Te m perature (Note 2)
0.4
I
C
= 20
I
B
0.3
-EMI
LLE
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.2
0.1
T = 150°C
A
T = 25°C
A
0
0.1
1
I , COLLECTOR CURRENT (mA)
C
10
Fig. 3 Typical Collector Emitter Saturation Voltage
vs. Collect or Current
°
T = -50°C
A
100
1,000
10
FE,
h D
1
1
10
I , COLLECTOR CURRENT (mA)
C
100
1,000
Fig. 2 Typical DC Current Gain vs. Collector Current
1,000
z)
V = 5V
CE
(M
100
DWID
10
-BA
T
f,
1
110100
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
C
Ordering Information (Note 6)
Part Number Case Packaging
BC847BVC-7 SOT-563 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
4VK
YM
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
BC847BVC
Document number: DS30638 Rev. 5 - 2
4VK = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
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April 2009
© Diodes Incorporated