Diodes BC847BS User Manual
Features
Ultra-Small Surface Mount Package
Ideally Suited for Automated Insertion
For switching and AF Amplifier Application
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
SOT363
Top View
BC847BS
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (approximate)
Device Schematic
Top View
e3
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BC847BS-7-F AEC-Q101 K1F 7 8 3,000
BC847BSQ-7-F Automotive K1F 7 8 3,000
BC847BS-13-F AEC-Q101 K1F 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K1F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
BC847BS
Document number: DS30222 Rev. 13 - 2
1 of 5
www.diodes.com
February 2013
© Diodes Incorporated
)
)
Maximum Ratings (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Thermal Characteristics (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
BC847BS
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
D
R
JA
T
, T
J
STG
50 V
45 V
6 V
100 mA
200 mA
200 mA
200 mW
625 °C/W
-65 to +150 °C
Electrical Characteristics (@T
= +25°C unless otherwise specified.)
A
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
BV
BV
BV
V
CE(sat)
V
BE(sat
V
BE(on
I
I
C
C
CBO
CEO
EBO
h
FE
CBO
EBO
f
T
CBO
EBO
50 — — V
45 — — V
6 — — V
200 — 450 —
— —
— 755 — mV
580 665 700 mV
—
—
— — 100 nA
—
—
100
400
20
5.0
100 — — MHz
— 2.0 3.0 pF
— 11 — pF
IC = 100A, IB = 0
IC = 10mA, IB = 0
IE = 100A, IC = 0
VCE = 5.0V, IC = 2.0mA
= 10mA, IB = 0.5mA
I
C
mV
I
= 100mA, IB = 5.0mA
C
IC = 10mA, IB = 0.5mA
VCE = 5.0V, IC = 2.0mA
V
nA
µA
= 40V
CB
= 40V, TA = +125°C
V
CB
VEB = 5.0V, I
= 5.0V, IC = 10mA,
V
CE
f = 100MHz
VCB = 10V, f = 1.0MHz
VEB = 0.5V, f = 1.0MHz
C
= 0
BC847BS
Document number: DS30222 Rev. 13 - 2
2 of 5
www.diodes.com
February 2013
© Diodes Incorporated
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