Diodes BC847BLP4 User Manual
Features
• Epitaxial Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ultra Low Profile (0.4mm max)
• Complementary PNP Type Available (BC857BLP4)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
DFN1006H4-3
Bottom View
BC847BLP4
45V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0008 grams (approximate)
C
B
E
Device Symbol
B
C
E
Top View
Device Schematic
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
BC847BLP4-7 F1 7 8mm 3,000
BC847BLP4-7B F1 7 8mm 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
BC847BLP4
Document number: DS31297 Rev. 6 - 2
BC847BLP4-7 BC847BLP4-7B
F1F1
Top View
Dot Denotes
Collector Side
Top View
Bar Denotes Base
and Emitter Side
1 of 5
www.diodes.com
F1 = Product Type Marking Code
February 2011
© Diodes Incorporated
θ
BC847BLP4
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
I
C
50 V
45 V
6.0 V
100 mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
250 mW
500
-55 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes: 4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
f
T
C
CBO
50 — — V
45 — — V
6 — — V
200 350 450 —
—
—
—
80
200
700
900
580 — 640
725
—
—
—
—
250
600
—
—
700
770
15
5.0
100 — — MHz
— 3.0 — pF
IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = 5.0V, IC = 2.0mA
mV
mV
mV
nA
µA
= 100mA, IB = 5.0mA
I
C
= 10mA, IB = 0.5mA
I
C
I
= 100mA, IB = 5.0mA
C
= 5.0V, IC = 2.0mA
V
CE
= 5.0V, IC = 10mA
V
CE
V
= 30V
CB
V
= 30V, TA = 150°C
CB
V
= 5.0V, IC = 10mA,
CE
= 10mA, IB = 0.5mA
I
C
f = 100MHz
VCB = 10V, f = 1.0MHz
BC847BLP4
Document number: DS31297 Rev. 6 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
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