Diodes BC846BLP4 User Manual

Features
Low Collector-Emitter Saturation Voltage, V
Ultra-Small Leadless Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
X2-DFN1006-3
Bottom View
CE(sat)
BC846BLP4
65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
B
Device Symbol
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.0009 grams (Approximate)
C
B
E
E
Device Schematic
e4
C
Top View
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
BC846BLP4-7B 3S 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
4. For packaging details, go to our website at http://www.diodes.com.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Marking Information
BC846BLP4
Document number: DS35751 Rev. 2 - 2
3S
Top View
Bar Denotes Base
and Emitter Side
www.diodes.com
3S = Product Type Marking Code
1 of 7
July 2012
© Diodes Incorporated
θ
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Peak Emitter Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
(Note 5) (Note 6) 1 (Note 5) (Note 6) 120
BC846BLP4
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
P
D
R
JA
θ
R
JL
T
, T
J
STG
80 V 65 V
6 V 100 mA 200 mA 200 mA
0.46
272
110
-55 to +150
W
°C/W °C/W
°C
ESD Ratings (Note 8)
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
BC846BLP4
Document number: DS35751 Rev. 2 - 2
2 of 7
www.diodes.com
July 2012
© Diodes Incorporated
T
R
T T
HER
R
T
C
P, P
T
R
T P
O
R
P, P
OWER
PATIO
N
Thermal Characteristics
1
D = 0.9 D = 0.7
E
D = 0.5
AN
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.000001 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (sec)
Fig. 1 Transi ent Therm al Resis t ance
R (t) = r(t) * R
θθ
JA JA
R = 272°C/W
θ
JA
Duty Cycle, D = t1/ t2
BC846BLP4
1,000
(W)
100
IWE
Single Pulse
°
R = 272C/W
θ
JA
R = r * R
θθ
JA(t) (t) JA
T - T = P * R
JA JA(t)
θ
0.5
0.4
(W)
0.3
10
ANSIEN
EAK
1
(PK)
0.1 1E-06 0.0001 0.01 1 100 10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
BC846BLP4
Document number: DS35751 Rev. 2 - 2
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www.diodes.com
DISSI
0.2
D
R = 272C/W
0.1
0
0 50 100 150 200
°
θ
JA
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3 Power Dissipation vs . Ambi ent Te m perature
July 2012
© Diodes Incorporated
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