Diodes BC807-16W, BC807-25W, BC807-40W Schematic [ru]
Lead-free Green
BC807-16W / -25W / -40W
A
M
J
L
ED
B
C
H
K
G
C
B
E
Features
· Ideally Suited for Automatic Insertion
· Epitaxial Planar Die Construction
· For Switching, AF Driver and Amplifier Applications
· Complementary NPN Types Available (BC817-xxW)
· Lead Free By Design/RoHS Compliant (Note 1)
· "Green" Device (Note 2)
Mechanical Data
· Case: SOT-323
· Case Material: Molded Plastic. "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
· Pin Connections: See Diagram
· Marking:
P/N Marking
BC807-16W
BC807-25W
BC807-40W
K5A
K5B
K5C
PNP SURFACE MOUNT TRANSISTOR
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
All Dimensions in mm
0° 8°
· Ordering & Date Code Information: See Page 3
· Approximate Weight: 0.006 grams
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at T
= 50°C (Note 3)
SB
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic (Note 4) Symbol Min Typ Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
Current Gain Group -16
-40
-25
-40
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30577 Rev. 5 - 2 1 of 3 BC807-16W / -25W / -40W
h
V
CE(SAT)
V
I
CES
I
EBO
C
FE
BE
f
T
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qJA
Tj, T
STG
100
160
250
60
100
170
—
— — -0.7 V
— — -1.2 V
— —
— — -100 nA
100 — — MHz
— — 12 pF
-45 V
-5.0 V
-500 mA
-1000 mA
-1000 mA
200 mW
625 °C/W
-65 to +150 °C
250
400
600
—
—
—
VCE = -1.0V, IC = -100mA
—
VCE = -1.0V, IC = -300mA
IC = -500mA, IB = -50mA
VCE = -1.0V, IC = -300mA
-100
-5.0
VCE = -45V
nA
VCE = -25V, Tj = 150°C
µA
VEB = -4.0V
VCE = -5.0V, IC = -10mA,
f = 50MHz
VCB = -10V, f = 1.0MHz
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10
100
1000
1 10 100 1000
f , GAIN BANDWIDTH PRODUCT (MHz)
T
-I , COLLECTOR CURRENT (mA)
C
Fig. 2, Gain-Bandwidth Product vs Collector Current
T = 25°C
A
f = 20MHz
-V = 5.0V
CE
1.0V
0
0.1
0.2
0.3
0.4
0.5
1 10
100
1000
-V , COLLECTOR SATURATION VOLTAGE (V)
CESAT
-I , COLLECTOR CURRENT (mA)
C
Fig. 3, Collector Sat. Voltage vs Collector Current
typical
limits
at T = 25°C
A
-I / -I = 10
CB
150°C
25°C
-50°C
0.1
10
100
1000
0.1 1 10 100
1000
h , DC CURRENT GAIN
FE
-I , COLLECTOR CURRENT (mA)
C
Fig. 4, DC Current Gain vs Collector Current
-V = 1V
CE
150°C
25°C
-50°C
0
100
200
300
400
500
0 1 2
-I , COLLECTOR CURRENT (mA)
C
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 5, Typical Emitter-Collector Characteristics
-I = 0.2mA
B
3.2
2.8
2
1.4
1.2
0.8
0.6
0.4
1.6
2.4
1.8
0
20
40
60
80
100
0 10 20
-I , COLLECTOR CURRENT (mA)
C
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 6, Typical Emitter-Collector Characteristics
-I = 0.05mA
B
0.1
0.15
0.2
0.25
0.3
0.35
0
100
200
300
400
0 100 200
P , POWER DISSIPATION (mW)
d
T , SUBSTRATE TEMPERATURE (°C)
SB
Fig. 1, Power Derating Curve
See Note 1
DS30577 Rev. 5 - 2 2 of 3 BC807-16W / -25W / -40W
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