Diodes APD160 User Manual

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Features

Applications

• Low Forward Voltage Drop

• Very Small Conduction Losses

• High Surge Capability

• Surge Overload Rating to 35A Peak

• Low Voltage High Frequency Inverters

DC-DC Converters

•

• Free Wheeling

• Polarity Protection

DO-41 R-1 DO-214AC

Figure 1. Package Types of APD160

Pin Configuration

VD/VH Package VR Package (DO-41/R-1) (DO-214AC)

Cathode line by

marking

Cathode Anode

Figure 2. Pin Configuration of APD160 (Top View)

Cathode line by

marking

Cathode Anode

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

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Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Ordering Information

APD160 -

E1: Lead Free

Part Number Marking ID

Packing

Type

Package

Circuit T ype

Package VD: DO-41 VH: R-1 VR: DO-214AC

Temperature

Range

G1: Green

Blank: Bulk

TR: Ammo or Tape & Reel

Lead Free Green Lead Free Green

DO-41

R-1

DO-214AC

-65 to 125°C

APD160VD-E1 APD160VD-G1 D160VD 160VDG Bulk APD160VDTR-E1 APD160VDTR-G1 D160VD 160VDG Ammo

APD160VH-E1 APD160VH-G1 D160VH 160VHG Bulk APD160VHTR-E1 APD160VHTR-G1 D160VH 160VHG Ammo

APD160VRTR-G1 160VRG

Tape &

Reel

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages.

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

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Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Absolute Maximum Ratings (T

=25°C unless otherwise noted) (Note 1)

A

Parameter Symbol Value Unit

Maximum Repetitive Peak Reverse Voltage V

60 V

RRM

Maximum DC Blocking Voltag e VDC 60 V Maximum RMS Voltage V

Average Rectified Forward Current

0.375” (9.5mm) Lead Length Non-repetitive Peak Forward Surge Current

8.3ms Single Half Sine-wave on Rated Load Operating Junction Temperature Range TJ -65 to 125

Storage Temperature Range T

42 V

RMS

I

1.0 A

F(AV)

35 A

I

FSM

°C

-65 to 150

STG

°C

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.

Thermal Characteristics

(TA=25°C unless otherwise noted)

Parameter Symbol Value Unit

DO-41 80

T ypica l Ther mal Resistance

θ

JA

R-1 80

°C/W

DO-214AC 100

Electrical Characteristics (T

=25°C unless otherwise noted)

A

Parameter Symbol Min Typ Max Unit

Forward Voltage @ IF=1.0A VF 0.68 V

Reverse Current @ Rated V

(Note 2)

R

TA=25°C

=100°C

T

A

I

R

Note 2: Pulse Test: 300µs pulse width, 1.0% duty cycle.

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

0.5 mA

10

3