Diodes AP2810 User Manual

1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Advance Datasheet
General Description
The AP2810 is an integrated high-side power switch that consists of N-Channel MOSFET, charge pump, over current & temperature and other related protection circuits. The switch’s low RDS (ON), 60mΩ, design easily to meet USB voltage drop requirements. It includes soft-start to limit inrush current, over-current protection, load short protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. Under voltage lockout (UVLO) function is used to ensure the device remain off unless there is a valid input voltage present. A Flag output is available to indicate fault conditions to the local USB controller.
The AP2810 is available in standard packages of SOIC-8 and MSOP-8.
Features
Low MOSFET on Resistance: 60m
=5.0V
@V
IN
Compliant to USB Specifications
Operating Voltage Range: 2.7V to 5.5V
Low Supply Current: 65µA (Typ)
Low Shutdown Current: 1.0µA (Max)
Guarantee 1.0A Continuous Load
Current Limit: 1.1A (Min), 2.1A (Max)
Under-voltage Lockout
Logic Level Enable Pin: Available in
Active-high or Active-low Version Over-current Protection
Over Temperature Protection
Load Short Protection with Fold-back
No Reverse Current When Power off
With Output Shutdown Pull-low Resistor for
A/C Versions
Applications
USB Power Management
USB Bus/Self Powered Hubs
Hot-plug Power Supplies
Battery-charger Circuits
Notebooks, Motherboard PCs
SOIC-8 MSOP-8
Figure 1. Package Types of AP2810
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
1
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Pin Configuration
M/MM Package
SOIC-8/MSOP-8
Figure 2. Pin Configuration of AP2810 (Top View)
Pin Descriptions
Pin Number Pin Name Function
1 GND Ground
2, 3 VIN Supply input pin
4
5
6, 7, 8 VOUT Switch output voltage
Chip enable control input, active low or high
Fault flag pin, output with open drain, need a pull-up resistor in application, active low to indicate OCP or OTP
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
2
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2810
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
3
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Ordering Information
AP2810 -
Circuit Type
Condition A: Active High with Auto Discharge B: Active High without Auto Discharge C: Active Low with Auto Discharge D: Active Low without Auto Discharge
Product Package Condition
SOIC-8
AP2810A
MSOP-8
SOIC-8
AP2810B
MSOP-8
SOIC-8
AP2810C
MSOP-8
SOIC-8
AP2810D
MSOP-8
Active High
with Auto Discharge
Active High
without Auto Discharge
Active Low
with Auto Discharge
Active Low
without Auto Discharge
Temperature
Range
-40 to 85°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Part Number Marking ID Green Green
AP2810AM-G1 2810AM-G1 Tube
AP2810AMTR-G1 2810AM-G1 Tape & Reel
AP2810AMM-G1 2810AMM-G1 Tube
AP2810AMMTR-G1 2810AMM-G1 Tape & Reel
AP2810BM-G1 2810BM-G1 Tube
AP2810BMTR-G1 2810BM-G1 Tape & Reel
AP2810BMM-G1 2810BMM-G1 Tube
AP2810BMMTR-G1 2810BMM-G1 Tape & Reel
AP2810CM-G1 2810CM-G1 Tube
AP2810CMTR-G1 2810CM-G1 Tape & Reel
AP2810CMM-G1 2810CMM-G1 Tube
AP2810CMMTR-G1 2810CMM-G1 Tape & Reel
AP2810DM-G1 2810DM-G1 Tube
AP2810DMTR-G1 2810DM-G1 Tape & Reel
AP2810DMM-G1 2810DMM-G1 Tube
AP2810DMMTR-G1 2810DMM-G1 Tape & Reel
G1: Green
TR: Tape & Reel Blank: Tube
Package M: SOIC-8 MM: MSOP-8
Packing
Type
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
4
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VIN 6.0 V
Operating Junction Temperature Range
Storage Temperature Range T
Lead Temperature (Soldering,10 Seconds)
Thermal Resistance Junction to Ambient
150 ºC
T
J
-65 to 150 ºC
STG
260 ºC
T
LEAD
θ
JA
SOIC-8 135
MSOP-8 150
o
C/W
ESD (Machine Model)
ESD (Human Body Model) 2000 V
200 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VIN 2.7 5.5 V
Operating Ambient Temperature Range
-40 85 °C
T
A
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
5
t
t
t
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Electrical Characteristics
(VIN=5.0V, CIN=2.2µF, C
Parameter Symbol Conditions Min Typ Max Unit
Input Voltage Range VIN 2.7 5.5 V
=1.0µF, Typical TA=25°C, unless otherwise specified)
OUT
Switch On Resistance R
Current Limit I
Supply Current I
Fold-back Short Current I
Shutdown Supply Current I
SHUTDOWN
Enable High Inpu Threshold Enable Low Inpu Threshold
VIN=5V, I
DS(ON)
V
LIMIT
VIN=5V, No Load 65 85 µA
SUPPLY
V
SHORT
1.6 5.5 V
V
ENH
0 1.0 V
V
ENL
=4.0V 1.1 1.5 2.1 A
OUT
=0 0.6 A
OUT
Chip Disable, Shutdown Mode
=1.0A 60 80 m
OUT
0.1 1 µA
Enable Pin Input Current IEN Force 0V to 5.0V at EN Pin -1.0 1.0 µA
Under Voltage Lockou Threshold Voltage
Under Voltage Hysteresis V
Reverse Current I
Output Pull Low Resistance after Shutdown
R
Output Turn-on Time tON
Flag Delay Time t
Flag Low Voltage V
Flag Leakage I
Thermal Shutdown Temperature Thermal Shutdown Hysteresis
T
VIN Increasing from 0V 2.2 2.5 2.7 V
V
UVLO
0.2 V
UVLOHY
REVERSE
DISCHARGE
Chip Disable, V
OUT>VIN
AP2810A, AP2810C only 100 200
From Enable Active to 90% of Output From Fault Condition to Flag
DFLG
FLG
LEAKAGE
T
OTSD
HYOTSD
Active
I
=5mA 35 70 mV
SINK
Flag Disable, Force 5.0V 1.0 µA
150 oC
0.1 1.0 µA
500 µs
5 10 15 ms
30 oC
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
6
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Typical Performance Characteristics
100
90
80
70
60
50
40
Supply Current (μA)
30
20
10
0
-40-20 0 20406080
Ambient Temperature (oC)
Figure 4. Supply Current vs. Ambient Temperature Figure 5. Supply Current vs. Supply Voltage
2.0
1.9
1.8
1.7
1.6
1.5
1.4
Current Limit (A)
1.3
1.2
1.1
1.0
3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
Figure 6. Current Limit vs. Supply Voltage Figure 7. Current Limit vs. Ambient Temperature
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
VIN=5V Enable Active No Load
TA=25oC Enable Active
100
90
80
70
60
50
40
30
Supply Current (μA)
20
10
0
-10
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.8
1.7
1.6
1.5
1.4
1.3
Current Limit (A)
1.2
1.1
1.0
-40-20 0 20406080
Ambient Temperature (oC)
TA=-40oC
TA= 25oC
TA= 85oC
Enable Active
Supply Voltage (V)
VIN=3.3V VIN=5V
Enable Active
7
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Typical Performance Characteristics (Continued)
0.80
0.75
0.70
0.65
0.60
0.55
0.50
Output Short Current (A)
0.45
0.40
3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (V)
TA=25oC Enable Active
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Output Short Current (A)
0.2
0.1
0.0
-40-20 0 20406080
Ambient Temperature (oC)
Figure 8. Output Short Current vs. Figure 9. Output Short Current vs. Input Voltage Ambient Temperature
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
Shutdown Current (μA)
-0.4
-0.6
-0.8
-1.0
-40-20 0 20406080
Ambient Temperature (oC)
VIN=5V Disable Active
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
Reverse Current (μA)
-0.4
-0.6
-0.8
-1.0
-40-20 0 20406080
Ambient Temperature (oC)
Figure 10. Shutdown Current vs. Ambient Temperature Figure 11. Reverse Current vs. Ambient Temperature
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
8
VIN=5V Enable Active
VIN=3.5V V
=4.5V
OUT
Disable Active
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Typical Performance Characteristics (Continued)
VEN (5V/div)
VEN
(5V/div)
I
INRUSH
(20mA/div) V
OUT
(1V/div)
I
INRUSH
(1A/div)
V
OUT
(1V/div)
Time(500µs/div) Time(500µs/div)
Figure 12. Output Turn ON and Rise Time Figure 13. Output Turn ON and Rise Time
(C
=1.0μF, C
IN
=1.0μF, No Load) (CIN=1.0μF, C
OUT
=1.0μF, R
OUT
=5.0)
L
VEN (5V/div)
I (1A/div)
V (1V/div)
INRUSH
OUT
VEN (5V/div)
V
OUT
(1V/div)
C
=1μF
OUT
C
=22μF
OUT
=100μF
C
OUT
C
=470μF
OUT
=220μF
C
OUT
Time(500µs/div) Time(5ms/div)
Figure 14. Output Turn ON and Rise Time Figure 15. Output Turn OFF and Falling Time
(C
=1.0μF, C
IN
=100μF, No Load) (VIN=5V, CIN=1.0μF, No Load)
OUT
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
9
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Typical Performance Characteristics (Continued)
VEN (5V/div) V (1V/div)
I (1A/div)
OUT
OUT
VEN (5V/div) V
OUT
(1V/div)
I
OUT
(1A/div)
Time(2ms/div) Time(100ms/div)
Figure 16. Output Turn OFF and Falling Time Figure 17. Output Short to GND Current
(V
=5V, CIN=1.0μF, C
IN
=470μF, RL=5.0) (VIN=5V,CIN=1.0μF)
OUT
V
FLAG
(1V/div)
V
OUT
(1V/div) I
OUT
(1A/div)
Time(5ms/div) Time(5ms/div)
Figure 18. FLAG Response During Over Current Figure 19. FLAG Response During Over Temperature
(V
=5V, CIN=1.0μF, C
IN
=470μF) (VIN=5V, CIN=1.0μF, C
OUT
V
FLAG
(1V/div)
V
OUT
(1V/div) I
OUT
(1A/div)
=220μF, RL=5.0)
OUT
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
10
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Typical Application
Note 2: 2.2μF input capacitor is enough in most application cases. If the VOUT is short to ground frequently during usage, large size input capacitor is necessary, recommend 22μF.
Figure 20. Typical Application of AP2810
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
11
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Mechanical Dimensions SOIC-8 Unit: mm(inch)
4.700(0.185)
5.100(0.201)
7
°
1.350(0.053)
1.750(0.069)
0.320(0.013)
°
8
1.000(0.039)
7
°
1.270(0.050)
TYP
0.330(0.013)
0.510(0.020)
0.100(0.004)
0.300(0.012)
3.800(0.150)
4.000(0.157)
0.190(0.007)
0.250(0.010)
0.900(0.035)
0.675(0.027)
0.725(0.029)
R0.150(0.006)
D
0
°
8
°
1° 5°
5.800(0.228)
6.200(0.244)
D
1
:
0
2
0.450(0.017)
0.800(0.031)
0.800(0.031)
5
1
.
0
R
°
8
0.200(0.008)
)
6
0
0
.
0
(
0
Note: Eject hole, oriented hole and mold mark is optional.
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
12
Advance Datasheet
1.0A High-side Power Distribution Switch with Enable and Flag AP2810
Mechanical Dimensions (Continued) MSOP-8 Unit: mm(inch)
)
)
4
2
1
2
1
1
.
.
0
0
(
(
0
0
0
0
9
1
.
.
2
3
4.700(0.185)
5.100(0.201)
0.410(0.016)
0.650(0.026)
)
)
0
8
0
0
0
0
.
.
0
0
(
(
0
0
0
0
0
2
.
.
0
0
Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited
13
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
http://www.bcdsemi.com
MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufactur ing Limited
- Wafer Fab
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Shanghai SIM-BCD Semiconductor Manufacturing Limited
Tel: +86-21-24162266, Fax: +86-21-24162277
800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
REGIONAL SALES OFFICE
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Tel: +86-755-8826 7951
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Fax: +86-755-8826 7865
Tel: +86-755-8826 7951 Fax: +86-755-8826 7865
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
- IC Design Group
800 Yi Shan Road, Shanghai 200233, China
Advanced Analog Circuits (Shanghai) Corporation
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office BCD Semiconductor (Taiwan) Company Limited
Taiwan Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
BCD Semiconductor (Taiwan) Company Limited
Tai wan
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel: +886-2-2656 2808
Taiwan
Fax: +886-2-2656 2806
Tel: +886-2-2656 2808 Fax: +886-2-2656 2806
USA Office BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
30920 Huntwood Ave. Hayward,
Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +1-510-324-2788
Tel : +1-510-324-2988 Fax: +1-510-324-2788
Loading...