Diodes AP2805 User Manual

500mA High-side Power Distribution Switch with Enable and Flag AP2805
Data Sheet
General Description
The AP2805 is an integrated high-side power switch that consists of N-Channel MOSFET, charge pump, over current & temperature and other related protection circuits. The switch’s low RDS (ON), 60m, design easily to meet USB voltage drop requirements. It includes soft-start to limit inrush current, over-current protection, load short protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. Under voltage lockout (UVLO) function is used to ensure the device remain off unless there is a valid input voltage present. A Flag output is available to indicate fault conditions to the local USB controller.
The AP2805 is available in standard packages of SOIC-8 and MSOP-8.
SOIC-8 MSOP-8
Figure 1. Package Types of AP2805
Features
Low MOSFET on Resistance:
60m@V
Compliant to USB Specifications
Operating Voltage Range: 2.7V to 5.5V
Low Supply Current: 60µA (Typ.)
Low Shutdown Current: 1.0µA (Max)
Guarantee 0.5A Continuous Load
Current Limit: 0.7A (Min), 1.4A (Max)
Under-voltage Lockout
Logic Level Enable Pin: Available in
Active-high or Active-low Version Over-current Protection
Over Temperature Protection
Load Short Protection with Fold-back
No Reverse Current When Power Off
Deglitched Flag Output with Open Drain
With Output Shutdown Pull-low Resistor for
A/C Versions
UL Approved (File No. E339337)
Nemko CB Scheme IEC60950-1, Ref. Certif
No. NO67288
=5.0V
IN
Applications
USB Power Management
USB Bus/Self Powered Hubs
Hot-plug Power Supplies
Battery-charger Circuits
Notebooks, Motherboard PCs
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
1
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Pin Configuration
M/MM Package
SOIC-8/MSOP-8
Figure 2. Pin Configuration of AP2805 (Top View)
Pin Descriptions
Pin Number Pin Name Function
1 GND Ground
2, 3 VIN Supply input pin
4
5
6, 7, 8 VOUT Switch output voltage
Chip enable control input, active low or high
Fault flag pin, output with open drain, need a pull-up resistor in application, active low to indicate OCP or OTP
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
2
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2805
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
3
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Ordering Information
AP2805 -
Circuit Type
Condition A: Active High with Auto Discharge B: Active High without Auto Discharge C: Active Low with Auto Discharge D: Active Low without Auto Discharge
Product Package Condition
SOIC-8
AP2805A
MSOP-8
SOIC-8
AP2805B
MSOP-8
SOIC-8
AP2805C
MSOP-8
SOIC-8
AP2805D
MSOP-8
Active High
with Auto Discharge
Active High
without Auto Discharge
Active Low
with Auto Discharge
Active Low
without Auto Discharge
Temperature
Range
-40 to 85°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Part Number Marking ID Green Green
AP2805AM-G1 2805AM-G1 Tube
AP2805AMTR-G1 2805AM-G1 Tape & Reel
AP2805AMM-G1 2805AMM-G1 Tube
AP2805AMMTR-G1 2805AMM-G1 Tape & Reel
AP2805BM-G1 2805BM-G1 Tube
AP2805BMTR-G1 2805BM-G1 Tape & Reel
AP2805BMM-G1 2805BMM-G1 Tube
AP2805BMMTR-G1 2805BMM-G1 Tape & Reel
AP2805CM-G1 2805CM-G1 Tube
AP2805CMTR-G1 2805CM-G1 Tape & Reel
AP2805CMM-G1 2805CMM-G1 Tube
AP2805CMMTR-G1 2805CMM-G1 Tape & Reel
AP2805DM-G1 2805DM-G1 Tube
AP2805DMTR-G1 2805DM-G1 Tape & Reel
AP2805DMM-G1 2805DMM-G1 Tube
AP2805DMMTR-G1 2805DMM-G1 Tape & Reel
G1: Green
TR: Tape & Reel Blank: Tube
Package M: SOIC-8 MM: MSOP-8
Packing
Type
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
4
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VIN 6.0 V
Operating Junction Temperature Range
Storage Temperature Range T
Lead Temperature (Soldering,10 sec) T
Thermal Resistance (Junction to Ambient)
150 ºC
T
J
-65 to 150 ºC
STG
260 ºC
LEAD
θ
JA
SOIC-8 135
MSOP-8 150
o
C/W
ESD (Machine Model)
ESD (Human Body Model) 2000 V
200 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VIN 2.7 5.5 V
Operating Ambient Temperature Range
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
-40 85 °C
T
A
5
t
f
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Electrical Characteristics
(VIN=5.0V, CIN=2.2µF, C
Parameter Symbol Conditions Min Typ Max Unit
Input Voltage Range VIN 2.7 5.5 V
Switch On Resistance R
=1.0µF, Typical TA=25°C, unless otherwise specified)
OUT
VIN=5.0V, I
DS(ON)
=0.5A 60 80
OUT
m
Current Limit I
Supply Current I
Fold-back Short Current I
Shutdown Supply Current I
Enable High Input Threshold V
Enable Low Input Threshold V
V
LIMIT
VIN=5.0V, No Load 60 80 µA
SUPPLY
V
SHORT
SHUTDOWN
Chip Disable, Shutdown Mode 0.1 1 µA
1.6 5.5 V
ENH
0 1.0 V
ENL
=4.0V 0.7 1.0 1.4 A
OUT
=0V 0.7 A
OUT
Enable Pin Input Current IEN Force 0V to 5.0V at EN Pin -1.0 1.0 µA
Under Voltage Lockou Threshold Voltage
Under Voltage Hysteresis V
Reverse Current I
Output Pull Low Resistance after Shutdown
Output Turn-on Time tON
Flag Delay Time t
Flag Low Voltage V
Flag Leakage Current I
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis T
V
UVLO
UVLOHY
REVERSE
R
DISCHARGE
DFLG
FLG
LEAKAGE
T
OTSD
HYOTSD
VIN Increasing from 0V 2.2 2.5 2.7 V
0.2 V
Chip Disable, V
AP2805A, AP2805C only 100 200
From Enable Active to 90% o Output From Fault Condition to Flag Active
I
=5.0mA 35 70 mV
SINK
0.1 1.0 µA
OUT>VIN
500 µs
5 10 15 ms
FLAG Disable, Force 5.0V 1.0 µA
150 oC
30 oC
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
6
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Typical Performance Characteristics
100
90
80
70
60
50
40
Supply Current (μA)
30
20
10
0
-40-200 20406080
Ambient Temperature (oC)
VIN=5V Enable Active No Load
100
90
80
70
60
50
40
30
Supply Current (μA)
20
10
0
-10
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 .5 5.0 5.5
TA=-40oC
TA= 25oC
TA= 85oC
Enable Active
Supply Voltage (V)
Figure 4. Supply Current vs. Ambient Temperature Figure 5. Supply Current vs. Supply Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
Current Limit (A)
0.8
0.7
0.6
0.5
3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
TA=25oC Enable Active
1.5
1.4
1.3
1.2
1.1
1.0
0.9
Current Limit (A)
0.8
0.7
0.6
0.5
-40-200 20406080
Ambient Temperature (oC)
VIN=3.3V VIN=5V
Enable Active
Figure 6. Current Limit vs. Supply Voltage Figure 7. Current Limit vs. Ambient Temperature
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
7
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Typical Performance Characteristics (Continued)
0.80
0.75
0.70
0.65
0.60
0.55
0.50
Output Short Current (A)
0.45
0.40
3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (V)
TA=25oC Enable Active
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Output Short Current (A)
0.2
0.1
0.0
-40 -20 0 20 40 60 80
Ambient Temperature (oC)
VIN=5V Enable Active
Figure 8. Output Short Current vs. Figure 9. Output Short Current vs. Input Voltage Ambient Temperature
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
Shutdown Current (μA)
-0.4
-0.6
-0.8
-1.0
-40-200 20406080
Ambient Temperature (oC)
VIN=5V Disable Active
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
Reverse Current (μA)
-0.4
-0.6
-0.8
-1.0
-40-200 20406080
Ambient Temperature (oC)
VIN=3.5V V
=4.5V
OUT
Disable Active
Figure 10. Shutdown Current vs. Ambient Temperature Figure 11. Reverse Current vs. Ambient Temperature
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
8
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Typical Performance Characteristics (Continued)
100
90
80
70
60
50
40
30
Switch On Resistance (mΩ)
20
10
0
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
Ambient Temperature (OC)
I
=0.5A
OUT
=5V
V
IN
Enable Active
100
90
80
70
60
50
Switch On Resistance (mΩ)
40
30
3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
TA=25OC
=0.5A
I
OUT
Enable Active
Figure 12. Switch On Resistance vs. Figure 13. Switch On Resistance vs.
Ambient Temperature Supply Voltage
2.70
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
Under Voltage Lockout Threshold Voltage (V)
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
VIN Rising
VIN Falling
Ambient Temperature (
Enable Active
O
C)
Figure 14. Under Voltage Lockout Threshold Voltage Figure 15. Flag Delay Time During Over Current
vs. Ambient Temperature vs. Ambient Temperature
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
9
15
14
13
12
11
10
9
8
7
6
Flag Delay Time During Over Current (mS)
5
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
Ambient Temperature (OC)
VIN=5V Enable Active
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Typical Performance Characteristics (Continued)
14
12
TA=25OC
=5V
V
IN
Enable Active
10
8
6
Flag Delay Time During Over Current (mS)
3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
1.6
1.5
1.4
1.3
1.2
1.1
Enable Threshold Voltage (V)
1.0
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
V
ENH
V
ENL
Ambient Temperature (
VIN=5V
O
C)
Figure 16. Flag Delay Time During Over Current Figure 17. Enable Threshold Voltage
vs. Supply Voltage vs. Ambient Temperature
1.7
Enable Threshold Voltage (V)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
3.0 3.5 4.0 4.5 5 .0 5.5
V
ENH
V
ENL
Supply Voltage (V)
Figure 18. Enable Threshold Voltage Figure 19. Output Turn ON and Rise Time
vs. Supply Voltage (C
TA=25OC
V
EN
(5V/div)
I
INRUSH
(20mA/div)
V
OUT
(1V/div)
Time(500µs/div)
=1.0μF,C
IN
=1.0μF,No Load)
OUT
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
10
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Typical Performance Characteristics (Continued)
VEN (5V/div)
VEN (5V/div)
I
I
INRUSH
(500mA/ div)
V
OUT
(1V/div)
INRUSH
(1A/div)
V
OUT
(1V/div)
Time(500µs/div) Time(500µs/div)
Figure 20. Output Turn ON and Rise Time Figure 21. Output Turn ON and Rise Time (C
=1.0μF, C
IN
=1.0μF, RL=6.6) (CIN=1.0μF, C
OUT
=47μF,No Load)
OUT
VEN (5V/div)
V (1V/div)
OUT
C
=1μF
OUT
C
=22μF
OUT
C
OUT
=470μF
C
OUT
=220μF
Figure 22. Output Turn OFF and Falling Time Figure 23. Output Turn OFF and Falling Time (V
C
=100μF
OUT
Time(5ms/div) Time(5ms/div)
=5V,CIN=1.0μF,No Load) (VIN=5V,CIN=1.0μF, C
IN
VEN (5V/div)
V
OUT
(1V/div)
I
OUT
(1A/div)
=470μF, R
OUT
=6.6Ω)
L
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
11
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Typical Performance Characteristics (Continued)
VEN (5V/div)
V
OUT
(1V/div) I
OUT
(1A/div)
Time(100ms/div) Time(5ms/div)
Figure 24. Output Short to GND Current Figure 25. FLAG Response During Over Current (V
=5V,CIN=1.0μF) (VIN=5V,CIN=1.0μF, C
IN
V
FLAG
(1V/div)
V (1V/div)
I (1A/div)
OUT
OUT
Time(5ms/div)
Figure 26. FLAG Response During Over Temperature
(V
=5V,CIN=1.0μF, C
IN
=220μF, R
OUT
=6.6Ω)
L
V
FLAG
(1V/div)
V
OUT
(1V/div)
I
OUT
(1A/div)
=470μF)
OUT
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
12
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Typical Application
Note 2: 2.2µF input capacitor is enough in most application cases.
If the VOUT is short to ground frequently during usage, large size input capacitor is necessary, recommend 22µF.
Figure 27. Typical Application of AP2805
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
13
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Mechanical Dimensions SOIC-8 Unit: mm(inch)
4.700(0.185)
5.100(0.201)
7
°
1.350(0.053)
1.750(0.069)
0.320(0.013)
°
8
1.000(0.039)
7
°
1.270(0.050)
TYP
0.330(0.013)
0.510(0.020)
0.100(0.004)
0.300(0.012)
3.800(0.150)
4.000(0.157)
0.190(0.007)
0.250(0.010)
0.900(0.035)
0.675(0.027)
0.725(0.029)
R0.150(0.006)
D
0
°
8
°
1° 5°
5.800(0.228)
6.200(0.244)
D
1
:
0
2
0.450(0.017)
0.800(0.031)
0.800(0.031)
5
1
.
0
R
°
8
0.200(0.008)
)
6
0
0
.
0
(
0
Note: Eject hole, oriented hole and mold mark is optional.
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
14
Data Sheet
500mA High-side Power Distribution Switch with Enable and Flag AP2805
Mechanical Dimensions (Continued) MSOP-8 Unit: mm(inch)
)
)
4
2
1
2
1
1
.
.
0
0
(
(
0
0
0
0
9
1
.
.
2
3
4.700(0.185)
5.100(0.201)
0.410(0.016)
0.650(0.026)
)
)
0
8
0
0
0
0
.
.
0
0
(
(
0
0
0
0
0
2
.
.
0
0
Aug. 2012 Rev 1. 0 BCD Semiconductor Manufacturing Limited
15
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
http://www.bcdsemi.com
MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufactur ing Limited
- Wafer Fab
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Shanghai SIM-BCD Semiconductor Manufacturing Limited
Tel: +86-21-24162266, Fax: +86-21-24162277
800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
REGIONAL SALES OFFICE
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Tel: +86-755-8826 7951
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Fax: +86-755-8826 7865
Tel: +86-755-8826 7951 Fax: +86-755-8826 7865
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
- IC Design Group
800 Yi Shan Road, Shanghai 200233, China
Advanced Analog Circuits (Shanghai) Corporation
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office BCD Semiconductor (Taiwan) Company Limited
Taiwan Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
BCD Semiconductor (Taiwan) Company Limited
Tai wan
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel: +886-2-2656 2808
Taiwan
Fax: +886-2-2656 2806
Tel: +886-2-2656 2808 Fax: +886-2-2656 2806
USA Office BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
30920 Huntwood Ave. Hayward,
Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +1-510-324-2788
Tel : +1-510-324-2988 Fax: +1-510-324-2788
Loading...