Diodes AP2280 User Manual
AP2280
Single Channel Slew Rate Controlled Load Switch
Features
• Wide input voltage range: 1.5V – 6V
• Low R
• Turn-on slew rate controlled
• AP2280-1: 100us turn-on rise time
• AP2280-2: 1ms turn-on rise time
• Very low turn-on quiescent current: << 1uA
• Fast load discharge pin
• Temperature range -40ºC to 85°C
• SOT25 and DFN2018-6: Available in “Green” Molding
Compound (No Br, Sb)
• Lead Free Finish/ RoHS Compliant (Note 1)
: 80mΩ typical @ 5V
DS(ON)
Applications
• Smart Phones
• Personal Digital Assistant (PDA)
• Cell Phones
• GPS Navigators
• Bluetooth Headsets
• PMP/MP4
• Notebook and Pocket PC
Description
The AP2280 slew rate controlled load switch is a si ngle P -channel
MOSFET power switch designed for high-side load-switching or
power distribution applications. The MOSFET has a typical
of 80mΩ at 5V, allowing increased load current handling
R
DS(ON)
capability with a low forward voltage drop. The turn-on slew rate of
the device is controlled internally to reduce turn-on inrush current.
The AP2280 load switch is designed to operate from 1.5V t o 6.0V,
making it ideal for 1.8V, 2.5V, 3.3V, and 5V systems. The typical
quiescent supply current is only 0.004uA, making it ideal for
battery powered distribution system where the power
consumption is a concern.
Ordering Information
Turn- on rise time
1 : 100us
2 : 1ms
AP2280 - X XX G - 7
Package
W : SOT25
FM : DFN2018-6
Green
G : Green
Packing
7 : Tape & Reel
Device
Package
Code
Packaging
(Note 2)
Quantity Part Number Suffix
AP2280-1WG-7 W SOT25 3000/Tape & Reel -7
AP2280-2WG-7 W SOT25 3000/Tape & Reel -7
AP2280-1FMG-7 FM DFN2018-6 3000/Tape & Reel -7
AP2280-2FMG-7 FM DFN2018-6 3000/Tape & Reel -7
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html
2. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
.
7” Tape and Reel
AP2280 Rev. 6 1 of 12 FEBRUARY 2009
www.diodes.com © Diodes Incorporated
Single Channel Slew Rate Controlled Load Switch
Pin Assignments
(1) SOT25 (2) DFN2018-6
GND
OUT IN
Pin Description
Pin Name
DIS 1 3
GND 2 2 Ground.
OUT
IN
EN 5 4 Enable input, active high
( Top View )
DIS
1
2
Pin Number
SOT25 DFN2018-6
3 1
4 5, 6
5
EN
43
Discharge pin. If DIS pin is tied to OUT pin externally, the output voltage
will be discharged to ground when disabled.
Voltage output pin. This is the pin to the P-channel MOSFET drain.
Bypass to ground through a 0.1uF capacitor.
Voltage input pin. This is the pin to the P-channel MOSFET source.
Bypass to ground through a 1µF capacitor.
( Top View )
OUT
GND
DIS
Description
1
2
3
AP2280
6
IN
5
IN
4
EN
Block Diagram
AP2280 Rev. 6
2 of 12 FEBRUARY 2009
www.diodes.com © Diodes Incorporated
T ypical Application Circuits
V
IN
IN
OUT
AP2280
Single Channel Slew Rate Controlled Load Switch
V
OUT
V
IN
IN
OUT
V
OUT
1uF
Enable
EN
GND
DIS
0.1uF
1uF
Enable
EN
DIS
GND
For applications without output discharge For applications with output discharge
Absolute Maximum Ratings
Symbol Parameter Ratings Units
ESD HBM Human Body Model ESD Protection 4 KV
ESD MM Machine Model ESD Protection 400 V
VIN Input Voltage 6.5 V
V
Output Voltage VIN + 0.3
OUT
VEN Enable Voltage 6.5 V
I
Maximum Continuous Load Current 2 A
load
T
Maximum Junction Temperature 125 °C
J(max)
TST Storage Temperature Range -65 ~ 150 °C
SOT25 (Note 3, 5) 750
PD Power Dissipation
DFN2018-6 (Note 3, 6) 1260
Notes: 3. Ratings apply to ambient temperature at 25°C
Recommended Operating Conditions
Symbol Parameter Min Max Units
V
IN
I
OUT
T
A
Notes: 4. Maximum output current depends on application conditions. Please refer to the application note section.
Input voltage 1.5 6.0 V
Output Current (Note 4) 0 2.0 A
Operating Ambient Te mperature -40 85
0.1uF
V
mW
°C
AP2280 Rev. 6
3 of 12 FEBRUARY 2009
www.diodes.com © Diodes Incorporated
⎯
μ
)
AP2280
Single Channel Slew Rate Controlled Load Switch
Electrical Characteristics
= 25oC, V
(T
A
Symbol Parameters Test Conditions Min Typ. Max Unit
I
Q
I
SHDN
I
LEAK
R
DS(ON)
V
IL
V
IH
I
SINK
T
D(ON)
T
ON
T
D(OFF)
R
DISCH
θ
JA
θ
JC
Notes: 5. Test condition for SOT25: Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Test condition for DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to
bottom layer 1.0"x1.4" ground plane.
AP2280 Rev. 6
= VEN = 5.0V, unless otherwise stated)
IN
Input Quiescent Current VEN = VIN, I
Input Shutdown Current VEN = 0V, OUT open
Input Leakage Current VEN = 0V, OUT grounded
V
= 5.0V 80 105 m
IN
Switch on-resistance
VIN = 3.3V 92 120 m
VIN = 1.8V 150 200 m
OUT
= 0
⎯
⎯
0.004 1
0.004 1
0.01 1
VIN = 1.5V 200 250 m
EN Input Logic Low Voltage VIN = 1.5V to 6V 0.4 V
1.4 V
1.7 V
⎯
1
1
100 150
1000 1500
0.4 1
EN Input Logic High Voltage
EN Input leakage V
Output turn-on delay time
Output turn-on rise time
Output turn-off delay time
1.5V ≤ V
≤ 2.7V
IN
2.7V < VIN < 5.25V 1.6 V
VIN ≥ 5.25V
= 5V
EN
R
=10Ω
load
AP2280-1, R
AP2280-2, R
R
=10Ω
load
load
load
=10Ω
=10Ω
Discharge FET on-resistance VEN = GND 20 40
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-case
4 of 12 FEBRUARY 2009
SOT25 (Note 5) 160
DFN2018-6 (Note 6
93
SOT25 (Note 5) 38
DFN2018-6 (Note 6) 41
www.diodes.com © Diodes Incorporated
μA
μA
μA
μS
μS
μS
μS
o
C/W
o
C/W
A
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