Diodes AP2210 User Manual

Data Sheet

300mA RF ULDO REGULATOR AP2210

General Description

The AP2210 is a 300mA ULDO regulator which pro­vides very low noise, ultra low dropout voltage
(typically 250mV at 300mA), very low standby current
(1

µA maximum) and excellent power supply ripple

rejection (PSRR 75dB at 100Hz) in battery powered
applications, such as handsets, PDAs and in noise sen­sitive applications, such as RF electronics.

The AP2210 also features individual logic compatible
enable/shutdown control inputs, a low power shutdown
mode for extended battery life, over current protection,
over temperature protection, as well as reversed-bat­tery protection.

The AP2210 has 2.5V, 2.8V, 3.0V, 3.3V, 3.6V, 4.0V,

5.0V and ADJ versions.

The AP2210 is available in space saving SOT-23-3 and
SOT-23-5 packages.

Features

· Up to 300mA Output Current

· Excellent ESR Stability

· Low Standby Current

· Low Dropout Voltage: V

· High Output Accuracy: ± 1%

· Good Ripple Rejection Ability: 75dB at 100Hz

and I

· Tight Load and Line Regulation

· Low Temperature Coefficient

· Over Current Protection

· Thermal Protection

· Reverse-battery Protection

· Logic-controlled Enable

OUT

=100µA

=250mV at 300mA

DROP

Applications

· Cellular Phones

· Cordless Phones

· Wireless Communicators

· PDAs/Palmtops

· PC Mother Board

· Consumer Electronics

SOT-23-3

Figure 1. Package Types of AP2210

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

1

SOT-23-5

Data Sheet

300mA RF ULDO REGULATOR AP2210

Pin Configuration

(SOT-23-3)

Pin Description

Pin Number

SOT-23-3 SOT-23-5

N Package

VIN

3

21

GND VOUT

Figure 2. Pin Configuration of AP2210 (Top View)

Pin Name

K Package

(SOT-23-5)

VIN

GND

EN

1

2

34

Function

5

VOUT

BYP/ADJ

1 2 GND Ground

2 5 VOUT Regulated output voltage

3 1 VIN Input voltage

3 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic

low=shutdown

4 BYP/ADJ Bypass capacitor for low noise operation/Adjustable Output

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

2

Data Sheet

300mA RF ULDO REGULATOR AP2210

Functional Block Diagram

2 (5)3 (1)

VIN

BYP

EN

(4)

(3)

+

-

Current Limit

Thermal Shutdown

Bandgap

Ref.

1 (2)

VOUT

A (B)
A for SOT-23-3
B for SOT-23-5

GND

Fixed Version

VIN

ADJ

1

4

5

+

Bandgap

Ref.

2

EN

3

-

Current Limit

Thermal Shutdown

GND

ADJ Version (For SOT-23-5)

Figure 3. Functional Block Diagram of AP2210

VOUT

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

3

Data Sheet

300mA RF ULDO REGULATOR AP2210

Ordering Information

Package

SOT-23-3

Circuit Type

Package

N: SOT-23-3
K: SOT-23-5

Temperature

Range

-40 to 125

o

C

AP2210 -

E1: Lead Free
G1: Green

TR: Tape and Reel

2.5: Fixed Output 2.5V

2.8: Fixed Output 2.8V

3.0: Fixed Output 3.0V

3.3: Fixed Output 3.3V

3.6: Fixed Output 3.6V

4.0: Fixed Output 4.0V

5.0: Fixed Output 5.0V
ADJ: Adjustable Output

Part Number Marking ID

Lead Free Green Lead Free Green

AP2210N-2.5TRE1 AP2210N-2.5TRG1 EH2 GH2 Tape & Reel

AP2210N-2.8TRE1 AP2210N-2.8TRG1 EH3 GH3 Tape & Reel

AP2210N-3.0TRE1 AP2210N-3.0TRG1 EH4 GH4 Tape & Reel

AP2210N-3.3TRE1 AP2210N-3.3TRG1 EH5 GH5 Tape & Reel

AP2210N-3.6TRG1 GB7 Tape & Reel

Packing

Typ e

AP2210N-4.0TRG1 GC7 Tape & Reel

AP2210N-5.0TRG1 GH9 Tape & Reel

AP2210K-2.5TRE1 AP2210K-2.5TRG1 E5C G5C Tape & Reel

AP2210K-2.8TRE1 AP2210K-2.8TRG1 E5F G5F Tape & Reel

AP2210K-3.0TRE1 AP2210K-3.0TRG1 E5H G5H Tape & Reel

AP2210K-3.3TRE1 AP2210K-3.3TRG1 E5K G5K Tape & Reel

SOT-23-5

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.

-40 to 125

o

C

AP2210K-3.6TRG1 G5I Tape & Reel

AP2210K-4.0TRG1 G5J Tape & Reel

AP2210K-5.0TRG1 G5L Tape & Reel

AP2210K-ADJTRG1 G5M Tape & Reel

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

4

Data Sheet

300mA RF ULDO REGULATOR AP2210

Absolute Maximum Ratings (Note 1)

Parameter

Supply Input Voltage V

Enable Input Voltage V

Power Dissipation P

Lead Temperature (Soldering, 10sec)

Junction Temperature

Storage Temperature

ESD (Machine Model)

Symbol Value

15 V

15 V

260

150

-65 to 150

300 V

T

LEAD

T

ESD

IN

EN

D

T

STG

Internally Limited (Thermal Protection) W

J

Unit

o

C

o

C

o

C

SOT-23-3 200

Thermal Resistance (No Heatsink) θ

JA

SOT-23-5 200

o

C/W

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Supply Input Voltage V

Enable Input Voltage V

Operating Junction Temperature T

IN

EN

J

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

5

2.5 13.2 V

0 13.2 V

-40 125

o

C

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.5 Electrical Characteristics

VIN=3.5V, I

otherwise specified.

unless

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

Variation from specified
V

OUT

)/∆T 48

VIN=3.5V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

-1 1

-2 2

120

1.5 4.5

16

15 50

12

30

%

µV/

ppm/

mV

mV

70

I

OUT

=50mA

110 150

230

Dropout Voltage (Note 5)

V

DROP

I

OUT

=100mA

140 250

mV

300

I

OUT

=150mA

165 275

350

I

OUT

=300mA

250 400

500

Standby Current

Ground Pin Current
(Note 6)

I

STD

I

GND

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

OUT

=100µA

100 150

180

V

≥2.0V, I

EN

OUT

=50mA

350 600

800

V

≥2.0V, I

EN

OUT

=150mA

1.3 1.9

2.5

V

≥2.0V, I

EN

OUT

=300mA

410

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

6

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.5 Electrical Characteristics

VIN=3.5V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

7

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.8 Electrical Characteristics

VIN=3.8V, I

otherwise specified.

unless

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

Variation from specified
V

OUT

)/∆T 42.8

VIN=3.8V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

-1 1

-2 2

120

1.5 4.5

16

15 50

12

30

%

µV/

ppm/

mV

mV

70

I

OUT

=50mA

110 150

230

Dropout Voltage (Note 5)

V

DROP

I

OUT

=100mA

140 250

mV

300

I

OUT

=150mA

165 275

350

I

OUT

=300mA

250 400

500

Standby Current

Ground Pin Current
(Note 6)

I

STD

I

GND

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

OUT

=100µA

100 150

180

V

≥2.0V, I

EN

OUT

=50mA

350 600

800

V

≥2.0V, I

EN

OUT

=150mA

1.3 1.9

2.5

V

≥2.0V, I

EN

OUT

=300mA

410

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

8

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.8 Electrical Characteristics

VIN=3.8V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

9

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-3.0 Electrical Characteristics

VIN=4V, I

unless

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

=100µA, CIN=1.0µF, C

OUT

otherwise specified.

∆V

∆V

(∆V

OUT/VOUT

=2.2µF, VEN≥

OUT

OUT/VOUT

/∆T

OUT

2.0V, TJ=25oC,

Variation from specified
V

OUT

Bold

typeface applies over -40oC≤TJ≤

-1 1

-2 2

120

)/∆T 40

125oC (Note 2),

%

µV/

ppm/

o

C

o

C

Line Regulation

Load Regulation
(Note 4)

Dropout Voltage (Note 5)

Standby Current

V

RLINE

V

RLOAD

V

DROP

I

STD

VIN=4V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

=50mA

I

OUT

I

=100mA

OUT

I

=150mA

OUT

=300mA

I

OUT

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

≥2.0V, I

V

V

V

EN

≥2.0V, I

EN

≥2.0V, I

EN

Ground Pin Current
(Note 6)

I

GND

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

1.5 4.5

12

mV

16

30

mV

15 50

70

110 150

230

140 250

mV

300

165 275

350

250 400

500

µA

OUT

OUT

=100µA

=50mA

100 150

180

350 600

µA

800

OUT

OUT

=150mA

=300mA

1.3 1.9

2.5

410

mA

15

=100µA75dB

OUT

=2.2µF,

OUT

260

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

10

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-3.0 Electrical Characteristics

VIN=4V, I

unless

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

otherwise specified.

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

11

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-3.3 Electrical Characteristics

VIN=4.3V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

=100µA, CIN=1.0µF, C

OUT

∆V

∆V

(∆V

OUT/VOUT

=2.2µF, VEN≥

OUT

OUT/VOUT

/∆T

OUT

2.0V, TJ=25oC,

Variation from specified
V

OUT

Bold

typeface applies over -40oC≤TJ≤

-1 1

-2 2

120

)/∆T 36.3

125oC (Note 2),

%

µV/

ppm/

o

C

o

C

Line Regulation

Load Regulation
(Note 4)

Dropout Voltage (Note 5)

Standby Current

V

RLINE

V

RLOAD

V

DROP

I

STD

VIN=4.3V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

=50mA

I

OUT

I

=100mA

OUT

I

=150mA

OUT

=300mA

I

OUT

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

≥2.0V, I

V

V

V

EN

≥2.0V, I

EN

≥2.0V, I

EN

Ground Pin Current
(Note 6)

I

GND

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

1.5 4.5

12

mV

16

30

mV

15 50

70

110 150

230

140 250

mV

300

165 275

350

250 400

500

µA

OUT

OUT

=100µA

=50mA

100 150

180

350 600

µA

800

OUT

OUT

=150mA

=300mA

1.3 1.9

2.5

410

mA

15

=100µA75dB

OUT

=2.2µF,

OUT

260

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

12

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-3.3 Electrical Characteristics

VIN=4.3V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

Note 2: Specifications in bold type are limited to

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

-40oC≤TJ≤

125oC)

below its nominal value measured at 1V differential.

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

125oC. Limits over temperature are guaranteed by design, but not

=25oC) or 2% (-

J

V

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

13

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-3.6 Electrical Characteristics

VIN=4.6V, I

otherwise specified.

unless

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

Variation from specified
V

OUT

)/∆T 48

VIN=4.6V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

-1 1

-2 2

120

1.5 4.5

16

15 50

12

30

%

µV/

ppm/

mV

mV

70

I

OUT

=50mA

110 150

230

Dropout Voltage (Note 5)

V

DROP

I

OUT

=100mA

140 250

mV

300

I

OUT

=150mA

165 275

350

I

OUT

=300mA

250 400

500

Standby Current

Ground Pin Current
(Note 6)

I

STD

I

GND

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

OUT

=100µA

100 150

180

V

≥2.0V, I

EN

OUT

=50mA

350 600

800

V

≥2.0V, I

EN

OUT

=150mA

1.3 1.9

2.5

V

≥2.0V, I

EN

OUT

=300mA

410

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

14

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-3.6 Electrical Characteristics

VIN=4.6V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

15

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-4.0 Electrical Characteristics

VIN=5.0V, I

otherwise specified.

unless

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

Variation from specified
V

OUT

)/∆T 48

VIN=5.0V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

-1 1

-2 2

120

1.5 4.5

16

15 50

12

30

%

µV/

ppm/

mV

mV

70

I

OUT

=50mA

110 150

230

Dropout Voltage (Note 5)

V

DROP

I

OUT

=100mA

140 250

mV

300

I

OUT

=150mA

165 275

350

I

OUT

=300mA

250 400

500

Standby Current

Ground Pin Current
(Note 6)

I

STD

I

GND

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

OUT

=100µA

100 150

180

V

≥2.0V, I

EN

OUT

=50mA

350 600

800

V

≥2.0V, I

EN

OUT

=150mA

1.3 1.9

2.5

V

≥2.0V, I

EN

OUT

=300mA

410

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

16

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-4.0 Electrical Characteristics

VIN=5.0V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

17

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-5.0 Electrical Characteristics

VIN=6.0V, I

otherwise specified.

unless

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

Variation from specified
V

OUT

)/∆T 48

VIN=6.0V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

-1 1

-2 2

120

1.5 4.5

16

15 50

12

30

%

µV/

ppm/

mV

mV

70

I

OUT

=50mA

110 150

230

Dropout Voltage (Note 5)

V

DROP

I

OUT

=100mA

140 250

mV

300

I

OUT

=150mA

165 275

350

I

OUT

=300mA

250 400

500

Standby Current

Ground Pin Current
(Note 6)

I

STD

I

GND

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

OUT

=100µA

100 150

180

V

≥2.0V, I

EN

OUT

=50mA

350 600

800

V

≥2.0V, I

EN

OUT

=150mA

1.3 1.9

2.5

V

≥2.0V, I

EN

OUT

=300mA

410

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

18

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-5.0 Electrical Characteristics

VIN=6.0V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

19

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-ADJ Electrical Characteristics

VIN=V

(Note 2), unless

OUT

+1V, I

=100µA, CIN=1.0µF, C

OUT

otherwise specified.

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

Standby Current

Ground Pin Current
(Note 6)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

I

STD

I

GND

Variation from specified
V

OUT

)/∆T 48

VIN=

V

+1V

OUT

I

=0.1mA to 300mA

OUT

to 13.2V

VEN≤0.4V (shutdown) 0.01 1

≤0.18V (shutdown) 5

V

EN

VEN≥2.0V, I

V

≥2.0V, I

EN

VEN≥2.0V, I

≥2.0V, I

V

EN

OUT

OUT

OUT

OUT

=100µA

=50mA

=150mA

=300mA

-1 1

-2 2

120

1.5 4.5

16

100 150

180

350 600

800

1.3 1.9

410

12

30

2.5

%

µV/

ppm/

mV

mV

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

Current Limit I

Output Noise

LIMIT

e

no

V

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Enable Input Logic-low
Vo l t a g e

Enable Input Logic-high
Vo l t a g e

Enable Input Logic-low
Current

Enable Input Logic-high
Current

V

IL

V

IH

I

IL

I

IH

Regulator shutdown

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

≤0.18V 2

V

IL

VIL≥2.0V 5 20

≥2.0V 25

V

IL

0.4

0.18

V

µA

µA

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

20

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-ADJ Electrical Characteristics

VIN=V

(Note 2), unless

Note 2: Specifications in bold type are limited to

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

OUT

+1V, I

=100µA, CIN=1.0µF, C

OUT

otherwise specified.

=2.2µF, VEN≥

OUT

-40oC≤TJ≤

2.0V, TJ=25oC,

125oC. Limits over temperature are guaranteed by design, but not

Bold

typeface applies over -40oC≤TJ≤

125oC

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

21

Data Sheet

300mA RF ULDO REGULATOR AP2210

Typical Performance Characteristics

3.0150

3.0125

3.0100

3.0075

3.0050

3.0025

3.0000

2.9975

2.9950

Output Voltage (V)

2.9925

2.9900

2.9875

2.9850

-50 -25 0 25 50 75 100 125

AP2210-3.0
VIN=4V, I

OUT

CIN=1.0µF, C

=10mA

=2.2µF

OUT

Junction Temperature (oC)

Figure 4. Output Voltage vs. Junction Temperature

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

Ground Pin Current (mA)

1.0

0.5

0.0
0 50 100 150 200 250 300

TA=25oC

CIN=1.0µF, C

Output Current (mA)

OUT

=2.2µF

550

500

450

400

350

300

250

200

Dropout Voltage (mv)

150

100

50

I

=50mA

OUT

I

=100mA

OUT

I

=150mA

OUT

I

=300mA

OUT

0

-60 -40 -20 0 20 40 60 80 100 120 140

CIN=1.0µF, C

OUT

=2.2µF

Junction Temperature (oC)

Figure 5. Dropout Voltage vs. Junction Temperature

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

Ground Pin Current (mA)

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140

Junction Temperature (oC)

AP2210-3.0
VIN=4V,CIN=1.0µF,C

I

=50mA

OUT

I

=100mA

OUT

I

=150mA

OUT

I

=300mA

OUT

OUT

=2.2µF

Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

22

Data Sheet

300mA RF ULDO REGULATOR AP2210

Typical Performance Characteristics (Continued)

20

AP2210-3.0

18

V

=4V, CIN=1.0µF

IN

16

C

=2.2µF, I

OUT

14

12

10

8

Enable Current (µA)

6

4

2

0

-50 -25 0 25 50 75 100 125

=100µA

OUT

Junction Temperature (oC)

VEN=1.8V

VEN=2.0V

VEN=3.0V

VEN=3.7V

2.0

1.8

1.6

1.4

1.2

1.0

Enable Voltage (V)

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125

VEN=logic high

VEN=logic low

Junction Temperature (oC)

AP2210-3.0
CIN=1.0µF, C

VIN=4V, I

OUT

=2.2µF

OUT

=100µA

Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature

10

1

V/ Hz

µ

0.1

5.5

5

AP2210-3.0

4.5

(0.5V/Div)

IN

4

V

0.01

AP2210-3.0
V

Output Noise ( )

0.001

0.0001

=4.5V, I

IN

C

=1.0µF, C

IN

C

BYP

10 100 1k 10k 100k 1M 10M

=100pF

OUT

=10mA

OUT

=2.2µF

Frequency (Hz)

Figure 10. Output Noise vs. Frequency

50

0

(50mV/Div)

-50

OUT

V

∆

-100

(Conditions: V

Time (20µs/Div)

Figure 11. Line Transient

=4 to 5V, VEN=2V, I

IN

C

=2.2µF)

OUT

OUT

=1mA,

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

23

Data Sheet

300mA RF ULDO REGULATOR AP2210

Typical Performance Characteristics (Continued)

600

400

200

(200mA/Div)

OUT

I

0

AP2210-3.0

50

0

(50mV/Div)

OUT

-50

V

∆

-100

Time (20µs/Div)

Figure 12. Load Transient

(Conditions: VIN=4V, VEN=2V,

=1.0

C

100

90

80

70

60

50

40

PSRR (dB)

30

20

10

0

10 100 1k 10k 100k 1M

IN

Frequency (Hz)

µF,

C

OUT

AP2210-3.0
VIN=4V, V

I

OUT

I

=10mA to 300mA,

OUT

=2.2µF)

RIPPLE

=10mA, C

=1V

OUT

PP

=2.2µF

6

4

2

(2V/Div)

EN

0

V

AP2210-3.0

2

0

(2V/Div)

OUT

-2

V

-4

Time (40µs/Div)

Figure 13. VEN vs. V

(Conditions: VEN=0 to 2V, VIN=4V, I

=1.0

C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Power Dissipation (W)

0.2

0.1

0.0
25 50 75 100 125 150

µF,

IN

Ambient Temperature (oC)

C

OUT

OUT

OUT

=30mA,

=2.2µF)

AP2210-3.0
SOT-23-3 Package
No Heatsink

Figure 14. PSRR vs. Frequency

Figure 15. Power Dissipation vs. Ambient Temperature

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

24

Data Sheet

300mA RF ULDO REGULATOR AP2210

Typical Performance Characteristics (Continued)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Power Dissipation (W)

0.2

0.1

0.0
25 50 7 5 100 125 150

AP2210-3.0
SOT-23-5 Package
No Heatsink

Ambient Temperature (oC)

Figure 16. Power Dissipation vs. Ambient Temperature

1000

100

C

OUT

No Bypass Capacitor

=2.2µF

1000

C

=1µF

OUT

100

10

ESR (Ω)

1

0.1

0.01
50 100 150 200 250 300

Stable Area

No Bypass Capacitor

Output Current (mA)

Figure 17. ESR vs. Output Current

1000

100

C

OUT

No Bypass Capacitor

=4.7µF

10

ESR (Ω)

1

0.1

0.01
50 100 150 200 25 0 300

Stable Area

Output Current (mA)

Figure 18. ESR vs. Output Current

10

ESR (Ω)

1

0.1

0.01
50 100 150 200 250 300

Stable Area

Output Current (mA)

Figure 19. ESR vs. Output Current

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

25

Data Sheet

300mA RF ULDO REGULATOR AP2210

Typical Application

V

V

IN

IN

VIN=4.0V

VIN=4.0V

C

IN

1.0 µ F

C

1.0 µ F

AP2210-3.0

VIN

IN

VOUT

GND

23

V

OUT

C

OUT

2.2 µ F

=3.0V

V

OUT

1

AP2210-3.0

1

VIN

2

GND

3

EN

VOUT

BYP

5

4

C

BYP

V

=3.0V

OUT

V

OUT

C

OUT

2.2 µF

100pF

For Fixed Version

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

26

Data Sheet

300mA RF ULDO REGULATOR AP2210

Typical Application (Continued)

V

IN

C

IN

V

=1.25V*(1+R2/R1)

OUT

AP2210-ADJ

ADJ

5

R1

4

R2

1

VIN

2

GND

V

EN

3

EN

VOUT

For Adjustable Version

Figure 20. Typical Application of AP2210 (Note 7)

V

OUT

C

OUT

Note 7: Dropout voltage is 250mV when TA=25oC. In order to obtain a normal output voltage, V

+0.25V is the minimum

OUT

input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage

+1V to 13.2V. For AP2210-3.0 version, its input voltage can be set from 4V(V

is V

OUT

+1V) to 13.2V.

OUT

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

27

Data Sheet

300mA RF ULDO REGULATOR AP2210

Application Information

Input Capacitor

A 1

µF minimum capacitor is recommended to be

placed between V

and GND.

IN

Output Capacitor

It is required to prevent oscillation. 1.0
is recommended when C

mum is recommended when C

is unused. 2.2µF mini-

BYP

BYP

µF minimum

is 100pF. The out-

put capacitor may be increased to improve transient
response.

Noise Bypass Capacitor

Bypass capacitor is connected to the internal voltage
reference. A small capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise, but the ESR
stable area will be narrowed. In order to keep the
output stability, it is recommended to use the bypass
capacitor no more than 100pF.

The start-up speed of the AP2210 is inversely
proportional to the value of reference bypass
capacitor. In some cases, if output noise is not a
major concern and rapid turn-on is necessary, omit
C

and leave BYP open.

BYP

Power Dissipation

Thermal shutdown may take place if exceeding the
maximum power dissipation in application. Under all
possible operating conditions, the junction tempera-

ture must be within the range specified under abso­lute maximum ratings to avoid thermal shutdown.
To determine if the power dissipated in the regulator
reaches the maximum power dissipation (see figure
16, 17), using:
T

= PD*θJA + T

J

PD=(VIN-V

Where: T

ings for the junction temperature; V

A

)*I

OUT

J≤TJ(max)

OUT+VIN*IGND

, T

is absolute maximum rat-

J(max)

IN*IGND

can be

ignored due to its small value.

T

J(max)

is 150

o

C, θ

is 200

JA

o

C/W, no heatsink is

required since the package alone will dissipate
enough heat to satisfy these requirements unless the
calculated value for power dissipation exceeds the
limit.

Example (3.0V version):

I

=300mA, TA=50oC, V

OUT

o

C-50oC)/(0.3A*200oC/W)+3.0V=4.67V

(150

IN(Max)

is:

Therefore, for good performance, please make sure
that input voltage is less than 4.67V without heatsink

when T

=50oC.

A

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

28

Data Sheet

300mA RF ULDO REGULATOR AP2210

Mechanical Dimensions

SOT-23-3 Unit: mm(inch)

2.820(0.111)

3.020(0.119)

0.300(0.012)

0.600(0.024)

0.100(0.004)

0.200(0.008)

2.650(0.104)

2.950(0.116)

0.950(0.037)
TYP

MAX.

1.450(0.057)

1.800(0.071)

2.000(0.079)

1.500(0.059)

0.300(0.012)

0.500(0.020)

0.900(0.035)

1.300(0.051)

0.200(0.008)

1.700(0.067)

0.000(0.000)

0.150(0.006)

0

°

8

°

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

29

Data Sheet

300mA RF ULDO REGULATOR AP2210

Mechanical Dimensions (Continued)

SOT-23-5 Unit: mm(inch)

2.820(0.111)

3.020(0.119)

)

)

4

2

2

1

0

0

.

.

0

)

)

9

)

)

6

4

1

0

1

1

.

.
0

0

(

(

0

0

5

5

6

9

.

.

2

2

7

5

6

0

0

.

.

0

0

(

(

0

0

0

0

5

7

.

.

1

1

0.200(0.008)

0

(

(

0

0
0

0

3

6

.

.

0

0

0.100(0.004)

0.200(0.008)

0.950(0.037)

P

Y

T

)
7
5
0

.

X

0

A

(
0

M

5
4

.
1

1.800(0.071)

2.000(0.079)

0.300(0.012)

0.400(0.016)

0

0

0

0

0

9

.

.

1

0

0

3

0

0

7

.

0

R

0

(

0

0

0

.

0

(

0

5

1

.

5

3

0

(

0

.

)

1

5

0

.

0

(

)

8

2

0

.

0

(

F

E

0°

8°

)

0

0

0

.

)

6

0

0

.

)

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

30

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

other rights nor the rights of others.

http://www.bcdsemi.com

MAIN SITE

MAIN SITE

- Headquarters

BCD Semiconductor Manufacturing Limited

BCD Semiconductor Manufactur ing Limited

- Wafer Fab

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Shanghai SIM-BCD Semiconductor Manufacturing Limited

Tel: [phone], Fax: [phone]

800, Yi Shan Road, Shanghai 200233, China
Tel: [phone], Fax: [phone]

REGIONAL SALES OFFICE

Shenzhen Office

REGIONAL SALES OFFICE

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

China

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Tel: [phone]

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Fax: [phone]

Tel: [phone]
Fax: [phone]

- Wafer Fab

BCD Semiconductor Manufacturing Limited

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

- IC Design Group

800 Yi Shan Road, Shanghai 200233, China

Advanced Analog Circuits (Shanghai) Corporation

Tel: [phone], Fax: [phone]

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: [phone], Fax: [phone]

Taiwan Office
BCD Semiconductor (Taiwan) Company Limited

Taiwan Office

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

BCD Semiconductor (Taiwan) Company Limited

Tai wan

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Tel: [phone]

Taiwan

Fax: [phone]

Tel: [phone]
Fax: [phone]

USA Office
BCD Semiconductor Corp.

USA Office

30920 Huntwood Ave. Hayward,

BCD Semiconductor Corporation

CA 94544, USA

30920 Huntwood Ave. Hayward,

Tel : [phone]

CA 94544, U.S.A

Fax: [phone]

Tel : [phone]
Fax: [phone]