Diodes AP2210 User Manual

Data Sheet

300mA RF ULDO REGULATOR AP2210

General Description

The AP2210 is a 300mA ULDO regulator which pro­vides very low noise, ultra low dropout voltage
(typically 250mV at 300mA), very low standby current
(1

µA maximum) and excellent power supply ripple

rejection (PSRR 75dB at 100Hz) in battery powered
applications, such as handsets, PDAs and in noise sen­sitive applications, such as RF electronics.

The AP2210 also features individual logic compatible
enable/shutdown control inputs, a low power shutdown
mode for extended battery life, over current protection,
over temperature protection, as well as reversed-bat­tery protection.

The AP2210 has 2.5V, 2.8V, 3.0V, 3.3V, 3.6V, 4.0V,

5.0V and ADJ versions.

The AP2210 is available in space saving SOT-23-3 and
SOT-23-5 packages.

Features

· Up to 300mA Output Current

· Excellent ESR Stability

· Low Standby Current

· Low Dropout Voltage: V

· High Output Accuracy: ± 1%

· Good Ripple Rejection Ability: 75dB at 100Hz

and I

· Tight Load and Line Regulation

· Low Temperature Coefficient

· Over Current Protection

· Thermal Protection

· Reverse-battery Protection

· Logic-controlled Enable

OUT

=100µA

=250mV at 300mA

DROP

Applications

· Cellular Phones

· Cordless Phones

· Wireless Communicators

· PDAs/Palmtops

· PC Mother Board

· Consumer Electronics

SOT-23-3

Figure 1. Package Types of AP2210

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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SOT-23-5

Data Sheet

300mA RF ULDO REGULATOR AP2210

Pin Configuration

(SOT-23-3)

Pin Description

Pin Number

SOT-23-3 SOT-23-5

N Package

VIN

3

21

GND VOUT

Figure 2. Pin Configuration of AP2210 (Top View)

Pin Name

K Package

(SOT-23-5)

VIN

GND

EN

1

2

34

Function

5

VOUT

BYP/ADJ

1 2 GND Ground

2 5 VOUT Regulated output voltage

3 1 VIN Input voltage

3 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic

low=shutdown

4 BYP/ADJ Bypass capacitor for low noise operation/Adjustable Output

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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Data Sheet

300mA RF ULDO REGULATOR AP2210

Functional Block Diagram

2 (5)3 (1)

VIN

BYP

EN

(4)

(3)

+

-

Current Limit

Thermal Shutdown

Bandgap

Ref.

1 (2)

VOUT

A (B)
A for SOT-23-3
B for SOT-23-5

GND

Fixed Version

VIN

ADJ

1

4

5

+

Bandgap

Ref.

2

EN

3

-

Current Limit

Thermal Shutdown

GND

ADJ Version (For SOT-23-5)

Figure 3. Functional Block Diagram of AP2210

VOUT

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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Data Sheet

300mA RF ULDO REGULATOR AP2210

Ordering Information

Package

SOT-23-3

Circuit Type

Package

N: SOT-23-3
K: SOT-23-5

Temperature

Range

-40 to 125

o

C

AP2210 -

E1: Lead Free
G1: Green

TR: Tape and Reel

2.5: Fixed Output 2.5V

2.8: Fixed Output 2.8V

3.0: Fixed Output 3.0V

3.3: Fixed Output 3.3V

3.6: Fixed Output 3.6V

4.0: Fixed Output 4.0V

5.0: Fixed Output 5.0V
ADJ: Adjustable Output

Part Number Marking ID

Lead Free Green Lead Free Green

AP2210N-2.5TRE1 AP2210N-2.5TRG1 EH2 GH2 Tape & Reel

AP2210N-2.8TRE1 AP2210N-2.8TRG1 EH3 GH3 Tape & Reel

AP2210N-3.0TRE1 AP2210N-3.0TRG1 EH4 GH4 Tape & Reel

AP2210N-3.3TRE1 AP2210N-3.3TRG1 EH5 GH5 Tape & Reel

AP2210N-3.6TRG1 GB7 Tape & Reel

Packing

Typ e

AP2210N-4.0TRG1 GC7 Tape & Reel

AP2210N-5.0TRG1 GH9 Tape & Reel

AP2210K-2.5TRE1 AP2210K-2.5TRG1 E5C G5C Tape & Reel

AP2210K-2.8TRE1 AP2210K-2.8TRG1 E5F G5F Tape & Reel

AP2210K-3.0TRE1 AP2210K-3.0TRG1 E5H G5H Tape & Reel

AP2210K-3.3TRE1 AP2210K-3.3TRG1 E5K G5K Tape & Reel

SOT-23-5

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.

-40 to 125

o

C

AP2210K-3.6TRG1 G5I Tape & Reel

AP2210K-4.0TRG1 G5J Tape & Reel

AP2210K-5.0TRG1 G5L Tape & Reel

AP2210K-ADJTRG1 G5M Tape & Reel

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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Data Sheet

300mA RF ULDO REGULATOR AP2210

Absolute Maximum Ratings (Note 1)

Parameter

Supply Input Voltage V

Enable Input Voltage V

Power Dissipation P

Lead Temperature (Soldering, 10sec)

Junction Temperature

Storage Temperature

ESD (Machine Model)

Symbol Value

15 V

15 V

260

150

-65 to 150

300 V

T

LEAD

T

ESD

IN

EN

D

T

STG

Internally Limited (Thermal Protection) W

J

Unit

o

C

o

C

o

C

SOT-23-3 200

Thermal Resistance (No Heatsink) θ

JA

SOT-23-5 200

o

C/W

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Supply Input Voltage V

Enable Input Voltage V

Operating Junction Temperature T

IN

EN

J

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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2.5 13.2 V

0 13.2 V

-40 125

o

C

Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.5 Electrical Characteristics

VIN=3.5V, I

otherwise specified.

unless

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

Variation from specified
V

OUT

)/∆T 48

VIN=3.5V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

-1 1

-2 2

120

1.5 4.5

16

15 50

12

30

%

µV/

ppm/

mV

mV

70

I

OUT

=50mA

110 150

230

Dropout Voltage (Note 5)

V

DROP

I

OUT

=100mA

140 250

mV

300

I

OUT

=150mA

165 275

350

I

OUT

=300mA

250 400

500

Standby Current

Ground Pin Current
(Note 6)

I

STD

I

GND

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

OUT

=100µA

100 150

180

V

≥2.0V, I

EN

OUT

=50mA

350 600

800

V

≥2.0V, I

EN

OUT

=150mA

1.3 1.9

2.5

V

≥2.0V, I

EN

OUT

=300mA

410

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.5 Electrical Characteristics

VIN=3.5V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.8 Electrical Characteristics

VIN=3.8V, I

otherwise specified.

unless

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

∆V

∆V

(∆V

OUT/VOUT

OUT/VOUT

/∆T

OUT

V

RLINE

V

RLOAD

Variation from specified
V

OUT

)/∆T 42.8

VIN=3.8V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

-1 1

-2 2

120

1.5 4.5

16

15 50

12

30

%

µV/

ppm/

mV

mV

70

I

OUT

=50mA

110 150

230

Dropout Voltage (Note 5)

V

DROP

I

OUT

=100mA

140 250

mV

300

I

OUT

=150mA

165 275

350

I

OUT

=300mA

250 400

500

Standby Current

Ground Pin Current
(Note 6)

I

STD

I

GND

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

OUT

=100µA

100 150

180

V

≥2.0V, I

EN

OUT

=50mA

350 600

800

V

≥2.0V, I

EN

OUT

=150mA

1.3 1.9

2.5

V

≥2.0V, I

EN

OUT

=300mA

410

µA

µA

mA

15

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

=100µA75dB

OUT

=2.2µF,

OUT

260

o

C

o

C

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-2.8 Electrical Characteristics

VIN=3.8V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Enable Input Logic-low Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

=100µA, CIN=1.0µF, C

OUT

=2.2µF, VEN≥

OUT

V

IL

IH

I

IL

I

IH

2.0V, TJ=25oC,

Regulator shutdown

Bold

typeface applies over -40oC≤TJ≤

125oC (Note 2),

0.4

0.18

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

V

≤0.18V 2

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

µA

µA

V

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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Data Sheet

300mA RF ULDO REGULATOR AP2210

Electrical Characteristics (Continued)
AP2210-3.0 Electrical Characteristics

VIN=4V, I

unless

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

=100µA, CIN=1.0µF, C

OUT

otherwise specified.

∆V

∆V

(∆V

OUT/VOUT

=2.2µF, VEN≥

OUT

OUT/VOUT

/∆T

OUT

2.0V, TJ=25oC,

Variation from specified
V

OUT

Bold

typeface applies over -40oC≤TJ≤

-1 1

-2 2

120

)/∆T 40

125oC (Note 2),

%

µV/

ppm/

o

C

o

C

Line Regulation

Load Regulation
(Note 4)

Dropout Voltage (Note 5)

Standby Current

V

RLINE

V

RLOAD

V

DROP

I

STD

VIN=4V to 13.2V

I

=0.1mA to 300mA

OUT

I

=100µA

OUT

=50mA

I

OUT

I

=100mA

OUT

I

=150mA

OUT

=300mA

I

OUT

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

≥2.0V, I

V

V

V

EN

≥2.0V, I

EN

≥2.0V, I

EN

Ground Pin Current
(Note 6)

I

GND

Ripple Rejection PSRR f=100Hz, I

V

Current Limit I

Output Noise

LIMIT

e

no

=0V 450 900 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

1.5 4.5

12

mV

16

30

mV

15 50

70

110 150

230

140 250

mV

300

165 275

350

250 400

500

µA

OUT

OUT

=100µA

=50mA

100 150

180

350 600

µA

800

OUT

OUT

=150mA

=300mA

1.3 1.9

2.5

410

mA

15

=100µA75dB

OUT

=2.2µF,

OUT

260

HznV /

Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited

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