Diodes AP2202 User Manual

Data Sheet
150mA RF ULDO REGULATOR AP2202
General Description
The AP2202 is a 150mA ULDO regulator which pro­vides very low noise, ultra low dropout voltage (typically 165mV at 150mA), very low standby current (1
µA maximum) and excellent power supply ripple
rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets and PDAs and in noise sensitive applications, such as RF electronics.
The AP2202 also features logic compatible enable/ shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery pro­tection.
The AP2202 has adjustable, 2.5V, 2.6V, 2.8V, 3.0V and
3.3V versions.
The AP2202 is available in space saving SOT-23-5 and SOT-89 packages.
Features
· Up to 150mA Output Current
· Low Standby Current
· Low Dropout Voltage: V
· High Output Accuracy: ± 1%
· Good Ripple Rejection Ability: 75dB at 100Hz
OUT
=100µA
and I
· Tight Load and Line Regulation
· Low Temperature Coefficient
· Over Current Protection
· Thermal Protection
· Reverse-battery Protection
· Logic-controlled Enable
=165mV at 150mA
DROP
Applications
· Cellular Phones
· Cordless Phones
· Digital Still Cameras
· Wireless Communicators
· PDAs / Palmtops
· PC Mother Board
· Consumer Electronics
SOT-23-5
Figure 1. Package Types of AP2202
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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SOT-89
Data Sheet
150mA RF ULDO REGULATOR AP2202
Pin Configuration
K Package
(SOT-23-5)
V
GND
EN
1
IN
2
34
5
Figure 2. Pin Configuration of AP2202 (Top View)
V
OUT
BYP
R Package
(SOT-89)
123
V
OUT
(TAB )
GND
V
V
GND
EN
IN
1
IN
2
34
V
5
OUT
ADJ
Pin Description
Pin Number
SOT-23-5 SOT-89
13 V
Pin Name
IN
Input voltage
2 2 GND Ground (TAB for SOT-89)
3 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic
low=shutdown
4 BYP/ADJ Bypass capacitor for low noise operation/Adjust output
51 V
OUT
Regulated output voltage
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Function
Data Sheet
150mA RF ULDO REGULATOR AP2202
Functional Block Diagram
V
BYP
EN
V
IN
1 (3)
IN
4
5 (1)
V
OUT
+
Bandgap
3
-
Current Limit
Thermal Shutdown
Ref.
2 (2)
A (B) A for SOT-23-5 B for SOT-89
GND
Fixed Regulator
1
5
V
OUT
4
ADJ
EN
3
+
-
Current Limit
Thermal Shutdown
Bandgap
Ref.
2
GND
Adjustable Regulator
Figure 3. Functional Block Diagram of AP2202
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Ordering Information
Package
SOT-23-5
SOT-89
Circuit Type
Package
K: SOT-23-5 R: SOT-89
Temperature
Range
o
-40 to 125
-40 to 125
C
o
C
AP2202 -
E1: Lead Free G1: Green
TR: Tape and Reel
ADJ: Adjustable Output
2.5: Fixed Output 2.5V
2.6: Fixed Output 2.6V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
Part Number Marking ID
Lead Free Green Lead Free Green
AP2202K-ADJTRE1 AP2202K-ADJTRG1 E2C G2C Tape & Reel
AP2202K-2.5TRE1 AP2202K-2.5TRG1 E2D G2D Tape & Reel
AP2202K-2.6TRE1 AP2202K-2.6TRG1 E2E G2E Tape & Reel
AP2202K-2.8TRE1 AP2202K-2.8TRG1 E2G G2G Tape & Reel
AP2202K-3.0TRE1 AP2202K-3.0TRG1 E2I G2I Tape & Reel
AP2202K-3.3TRE1 AP2202K-3.3TRG1 E2L G2L Tape & Reel
AP2202R-3.3TRE1 AP2202R-3.3TRG1 E22B G22B Tape & Reel
Packing Type
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages.
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Supply Input Voltage V
Enable Input Voltage V
Power Dissipation P
Lead Temperature (Soldering, 10sec) T
LEAD
Junction Temperature T
Storage Temperature T
IN
EN
D
STG
Internally Limited (Thermal Protection) W
J
15 V
15 V
260
150
-65 to 150
o
C
o
C
o
C
ESD (Machine Model) 200 V
Thermal Resistance (No Heatsink) θ
SOT-23-5 200
JA
SOT-89 165
o
C/W
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Input Voltage V
Enable Input Voltage V
Operating Junction Temperature T
IN
EN
J
2.5 13.2 V
0 13.2 V
-40 125
o
C
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics AP2202-ADJ Electrical Characteristics
VIN=V
(note 2), unless
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy
Output Voltage Temperature Coefficient (Note 3)
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Standby Current
Ground Pin Current (Note 6)
Ripple Rejection PSRR frequency=100Hz, I
Current Limit I
Output Noise
OUT
+1V, I
=100µA, CIN=1.0µF, C
OUT
otherwise specified.
V
OUT/VOUT
V
OUT
V
RLINE
V
RLOAD
V
I
I
LIMIT
DROP
STD
GND
e
no
OUT
/T
=2.2µF, VEN≥
Variation from specified V
VIN=V
I
OUT
I
OUT
I
OUT
I
OUT
I
OUT
2.0V, TJ=25oC,
Bold
typeface applies over -40oC≤TJ≤
-1 1
OUT
+1V to 13.2V
OUT
-2 2
0.004 0.012
=0.1mA to 150mA 0.02 0.2
=100µA
=50mA
=100mA
=150mA
VEN≤0.4V (shutdown) 0.01 1
V
0.18V (shutdown) 5
EN
VEN≥2.0V, I
V
2.0V, I
EN
2.0V, I
V
EN
2.0V, I
V
EN
2.0V, I
V
EN
V
=0V 320 550 mA
OUT
I
=50mA, C
OUT
OUT
OUT
OUT
OUT
OUT
OUT
=0µA
=100µA
=50mA
=100mA
=150mA
=100µA75 dB
OUT
1300 1900
=2.2µF,
100pF from BYP to GND
120
0.05
0.5
15 50
70
110 150
230
140 250
300
165 275
350
95 130
150
98 140
160
350 600
800
600 1000
1500
2500
260
125oC
%
µV/
%/V
%
mV
µA
µA
o
C
HznV /
Enable Input Logic-Low Vo l t a g e
V
IL
Regulator shutdown
0.4
0.18
V
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-ADJ Electrical Characteristics
VIN=V
(note 2), unless
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-High Vo l t a g e
OUT
+1V, I
=100µA, CIN=1.0µF, C
OUT
otherwise specified.
=2.2µF, VEN≥
OUT
V
IH
Regulator enabled 2.0 V
2.0V, TJ=25oC,
Bold
typeface applies over -40oC≤TJ≤
125oC
Enable Input Logic-Low Current
Enable Input Logic-High Current
Thermal Resistance
I
IL
I
IH
θ
JC
VIL≤0.4V 0.01 1
0.18V 2
V
IL
VIH≥2.0V 5 20
V
2.0V 25
IH
SOT-23-5 63.4
o
C/W
µA
µA
SOT-89 50
Note 2: Specifications in bold type are limited to
-40oC≤TJ≤
125oC. Limits over temperature are guaranteed by design, but not
tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
o
C≤TJ≤
125oC)
40
below its nominal value measured at 1V differential.
=25oC) or 2% (-
J
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-2.5 Electrical Characteristics
VIN=3.5V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy
Output Voltage Temperature Coefficient (Note 3)
=100µA, CIN=1.0µF, C
OUT
V
(∆V
=2.2µF, VEN≥
OUT
OUT/VOUT
/T
V
OUT
OUT/VOUT
2.0V, TJ=25oC,
Variation from specified V
OUT
Bold
typeface applies over -40oC≤TJ≤
-1 1
-2 2
120
)/∆T 48
125oC (note 2),
%
µV/
ppm/
o
C
o
C
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Standby Current
Ground Pin Current (Note 6)
V
RLINE
V
RLOAD
V
DROP
I
I
GND
STD
VIN=3.5V to 13.2V
I
=0.1mA to 150mA 1 5
OUT
I
=100µA
OUT
=50mA
I
OUT
=100mA
I
OUT
=150mA
I
OUT
VEN≤0.4V (shutdown) 0.01 1
V
0.18V (shutdown) 5
EN
VEN≥2.0V, I
V
2.0V, I
EN
2.0V, I
V
EN
2.0V, I
V
EN
2.0V, I
V
EN
OUT
OUT
OUT
OUT
OUT
=0µA
=100µA
=50mA
=100mA
=150mA
Ripple Rejection PSRR frequency=100Hz, I
V
Current Limit I
Output Noise
LIMIT
e
no
=0V 320 550 mA
OUT
I
=50mA, C
OUT
OUT
100pF from BYP to GND
13
mV
13
mV
13
15 50
70
110 150
230
mV
140 250
300
165 275
350
µA
95 130
150
98 140
160
350 600
µA
800
600 1000
1500
1300 1900
2500
=100µA75 dB
OUT
=2.2µF,
260
HznV /
Enable Input Logic-Low Vo l t a g e
V
IL
Regulator shutdown
0.4
0.18
V
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-2.5 Electrical Characteristics
VIN=3.5V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-High Vo l t a g e
=100µA, CIN=1.0µF, C
OUT
=2.2µF, VEN≥
OUT
V
IH
2.0V, TJ=25oC,
Bold
typeface applies over -40oC≤TJ≤
125oC (note 2),
Regulator enabled 2.0 V
Enable Input Logic-Low Current
Enable Input Logic-High Current
Thermal Resistance
I
IL
I
IH
θ
JC
VIL≤0.4V 0.01 1
0.18V 2
V
IL
VIH≥2.0V 5 20
V
2.0V 25
IH
SOT-23-5 63.4
o
C/W
µA
µA
SOT-89 50
Note 2: Specifications in bold type are limited to
-40oC≤TJ≤
125oC. Limits over temperature are guaranteed by design, but not
tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load reg­ulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
o
C≤TJ≤
125oC)
40
below its nominal value measured at 1V differential.
=25oC) or 2% (-
J
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-2.6 Electrical Characteristics
VIN=3.6V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy
Output Voltage Temperature Coefficient (Note 3)
=100µA, CIN=1.0µF, C
OUT
V
(∆V
=2.2µF, VEN≥
OUT
OUT/VOUT
/T
V
OUT
OUT/VOUT
2.0V, TJ=25oC,
Variation from specified V
OUT
Bold
typeface applies over -40oC≤TJ≤
-1 1
-2 2
120
)/∆T 46
125oC (note 2),
%
µV/
ppm/
o
C
o
C
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Standby Current
Ground Pin Current (Note 6)
V
RLINE
V
RLOAD
V
DROP
I
STD
I
GND
VIN=3.6V to 13.2V
I
=0.1mA to 150mA 1 6
OUT
I
=100µA
OUT
=50mA
I
OUT
=100mA
I
OUT
=150mA
I
OUT
VEN≤0.4V (shutdown) 0.01 1
V
0.18V (shutdown) 5
EN
VEN≥2.0V, I
V
2.0V, I
EN
2.0V, I
V
EN
2.0V, I
V
EN
2.0V, I
V
EN
OUT
OUT
OUT
OUT
OUT
=0µA
=100µA
=50mA
=100mA
=150mA
Ripple Rejection PSRR frequency=100Hz, I
V
Current Limit I
Output Noise
LIMIT
e
no
=0V 320 550 mA
OUT
I
=50mA, C
OUT
OUT
100pF from BYP to GND
13
mV
13
mV
14
15 50
70
110 150
230
mV
140 250
300
165 275
350
µA
95 130
150
98 140
160
350 600
µA
800
600 1000
1500
1300 1900
2500
=100µA75 dB
OUT
=2.2µF,
260
HznV /
Enable Input Logic-Low Voltage
V
IL
Regulator shutdown
0.4
0.18
V
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-2.6 Electrical Characteristics
VIN=3.6V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-High Vo l t a g e
=100µA, CIN=1.0µF, C
OUT
=2.2µF, VEN≥
OUT
V
IH
2.0V, TJ=25oC,
Bold
typeface applies over -40oC≤TJ≤
125oC (note 2),
Regulator enabled 2.0 V
Enable Input Logic-Low Current
Enable Input Logic-High Current
Thermal Resistance
I
IL
I
IH
θ
JC
VIL≤0.4V 0.01 1
0.18V 2
V
IL
VIH≥2.0V 5 20
V
2.0V 25
IH
SOT-23-5 63.4
o
C/W
µA
µA
SOT-89 50
Note 2: Specifications in bold type are limited to
-40oC≤TJ≤
125oC. Limits over temperature are guaranteed by design, but not
tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
o
40
C≤TJ≤
125oC)
below its nominal value measured at 1V differential.
=25oC) or 2% (-
J
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-2.8 Electrical Characteristics
VIN=3.8V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy
Output Voltage Temperature Coefficient (Note 3)
=100µA, CIN=1.0µF, C
OUT
V
(∆V
=2.2µF, VEN≥
OUT
OUT/VOUT
/T
V
OUT
OUT/VOUT
2.0V, TJ=25oC,
Variation from specified V
OUT
Bold
typeface applies over -40oC≤TJ≤
-1 1
-2 2
120
)/∆T 42.8
125oC (note 2),
%
µV/
ppm/
o
C
o
C
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Standby Current
Ground Pin Current (Note 6)
V
RLINE
V
RLOAD
V
DROP
I
I
GND
STD
VIN=3.8V to 13.2V
I
=0.1mA to 150mA 1 6
OUT
I
=100µA
OUT
=50mA
I
OUT
=100mA
I
OUT
=150mA
I
OUT
VEN≤0.4V (shutdown) 0.01 1
V
0.18V (shutdown) 5
EN
VEN≥2.0V, I
V
2.0V, I
EN
2.0V, I
V
EN
2.0V, I
V
EN
2.0V, I
V
EN
OUT
OUT
OUT
OUT
OUT
=0µA
=100µA
=50mA
=100mA
=150mA
Ripple Rejection PSRR frequency=100Hz, I
V
Current Limit I
Output Noise
LIMIT
e
no
=0V 320 550 mA
OUT
I
=50mA, C
OUT
OUT
100pF from BYP to GND
14
mV
14
mV
14
15 50
70
110 150
230
mV
140 250
300
165 275
350
µA
95 130
150
98 140
160
350 600
µA
800
600 1000
1500
1300 1900
2500
=100µA75 dB
OUT
=2.2µF,
260
HznV /
Enable Input Logic-Low Vo l t a g e
V
IL
Regulator shutdown
0.4
0.18
V
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-2.8 Electrical Characteristics
VIN=3.8V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-High Vo l t a g e
=100µA, CIN=1.0µF, C
OUT
=2.2µF, VEN≥
OUT
V
IH
2.0V, TJ=25oC,
Bold
typeface applies over -40oC≤TJ≤
125oC (note 2),
Regulator enabled 2.0 V
Enable Input Logic-Low Current
Enable Input Logic-High Current
Thermal Resistance
I
IL
I
IH
θ
JC
VIL≤0.4V 0.01 1
0.18V 2
V
IL
VIH≥2.0V 5 20
V
2.0V 25
IH
SOT-23-5 63.4
o
C/W
µA
µA
SOT-89 50
Note 2: Specifications in bold type are limited to
-40oC≤TJ≤
125oC. Limits over temperature are guaranteed by design, but not
tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
o
C≤TJ≤
125oC)
40
below its nominal value measured at 1V differential.
=25oC) or 2% (-
J
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-3.0 Electrical Characteristics
VIN=4V, I
unless
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy
Output Voltage Temperature Coefficient (Note 3)
=100µA, CIN=1.0µF, C
OUT
otherwise specified.
V
(∆V
=2.2µF, VEN≥
OUT
OUT/VOUT
/T
V
OUT
OUT/VOUT
2.0V, TJ=25oC,
Variation from specified V
OUT
Bold
typeface applies over -40oC≤TJ≤
-1 1
-2 2
120
)/∆T 40
125oC (note 2),
%
µV/
ppm/
o
C
o
C
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Standby Current
Ground Pin Current (Note 6)
V
RLINE
V
RLOAD
V
DROP
I
I
GND
STD
VIN=4V to 13.2V
I
=0.1mA to 150mA 1 7
OUT
I
=100µA
OUT
=50mA
I
OUT
=100mA
I
OUT
=150mA
I
OUT
VEN≤0.4V (shutdown) 0.01 1
V
0.18V (shutdown) 5
EN
VEN≥2.0V, I
V
2.0V, I
EN
2.0V, I
V
EN
2.0V, I
V
EN
2.0V, I
V
EN
OUT
OUT
OUT
OUT
OUT
=0µA
=100µA
=50mA
=100mA
=150mA
Ripple Rejection PSRR frequency=100Hz, I
V
Current Limit I
Output Noise
LIMIT
e
no
=0V 320 550 mA
OUT
I
=50mA, C
OUT
OUT
100pF from BYP to GND
14
mV
14
mV
15
15 50
70
110 150
230
mV
140 250
300
165 275
350
µA
95 130
150
98 140
160
350 600
µA
800
600 1000
1500
1300 1900
2500
=100µA75 dB
OUT
=2.2µF,
260
HznV /
Enable Input Logic-Low Vo l t a g e
V
IL
Regulator shutdown
0.4
0.18
V
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
14
Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-3.0 Electrical Characteristics
VIN=4V, I
unless
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-High Vo l t a g e
=100µA, CIN=1.0µF, C
OUT
otherwise specified.
=2.2µF, VEN≥
OUT
V
IH
2.0V, TJ=25oC,
Bold
typeface applies over -40oC≤TJ≤
125oC (note 2),
Regulator enabled 2.0 V
Enable Input Logic-Low Current
Enable Input Logic-High Current
Thermal Resistance
I
IL
I
IH
θ
JC
VIL≤0.4V 0.01 1
0.18V 2
V
IL
VIH≥2.0V 5 20
V
2.0V 25
IH
SOT-23-5 63.4
o
C/W
µA
µA
SOT-89 50
Note 2: Specifications in bold type are limited to
-40oC≤TJ≤
125oC. Limits over temperature are guaranteed by design, but not
tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
o
C≤TJ≤
125oC)
40
below its nominal value measured at 1V differential.
=25oC) or 2% (-
J
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
15
Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-3.3 Electrical Characteristics
VIN=4.3V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy
Output Voltage Temperature Coefficient (Note 3)
=100µA, CIN=1.0µF, C
OUT
V
(∆V
=2.2µF, VEN≥
OUT
OUT/VOUT
/T
V
OUT
OUT/VOUT
2.0V, TJ=25oC,
Variation from specified V
OUT
Bold
typeface applies over -40oC≤TJ≤
-1 1
-2 2
120
)/∆T 36.3
125oC (note 2),
%
µV/
ppm/
o
C
o
C
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Standby Current
Ground Pin Current (Note 6)
V
RLINE
V
RLOAD
V
DROP
I
I
GND
STD
VIN=4.3V to 13.2V
I
=0.1mA to 150mA 1 8
OUT
I
=100µA
OUT
=50mA
I
OUT
=100mA
I
OUT
=150mA
I
OUT
VEN≤0.4V (shutdown) 0.01 1
V
0.18V (shutdown) 5
EN
VEN≥2.0V, I
V
2.0V, I
EN
2.0V, I
V
EN
2.0V, I
V
EN
2.0V, I
V
EN
OUT
OUT
OUT
OUT
OUT
=0µA
=100µA
=50mA
=100mA
=150mA
Ripple Rejection PSRR frequency=100Hz, I
V
Current Limit I
Output Noise
LIMIT
e
no
=0V 320 550 mA
OUT
I
=50mA, C
OUT
OUT
100pF from BYP to GND
15
mV
15
mV
17
15 50
70
110 150
230
mV
140 250
300
165 275
350
µA
95 130
150
98 140
160
350 600
µA
800
600 1000
1500
1300 1900
2500
=100µA75 dB
OUT
=2.2µF,
260
HznV /
Enable Input Logic-Low Vo l t a g e
V
IL
Regulator shutdown
0.4
0.18
V
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
16
Data Sheet
150mA RF ULDO REGULATOR AP2202
Electrical Characteristics (Continued) AP2202-3.3 Electrical Characteristics
VIN=4.3V, I
unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-High Vo l t a g e
=100µA, CIN=1.0µF, C
OUT
=2.2µF, VEN≥
OUT
V
IH
2.0V, TJ=25oC,
Bold
typeface applies over -40oC≤TJ≤
125oC (note 2),
Regulator enabled 2.0 V
Enable Input Logic-Low Current
Enable Input Logic-High Current
Thermal Resistance
I
IL
I
IH
θ
JC
VIL≤0.4V 0.01 1
0.18V 2
V
IL
VIH≥2.0V 5 20
V
2.0V 25
IH
SOT-23-5 63.4
o
C/W
µA
µA
SOT-89 50
Note 2: Specifications in bold type are limited to
-40oC≤TJ≤
125oC. Limits over temperature are guaranteed by design, but not
tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
o
C≤TJ≤
125oC)
40
below its nominal value measured at 1V differential.
=25oC) or 2% (-
J
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
17
Data Sheet
150mA RF ULDO REGULATOR AP2202
Typical Performance Characteristics
2.900
2.875
2.850
2.825
2.800
2.775
Output Voltage (V)
2.750
2.725
2.700
-60 -40 -20 0 20 40 60 80 100 120 140
AP2202-2.8 VIN=3.8V, I
CIN=1.0µF, C
OUT
=10mA
=2.2µF
OUT
Junction Temperature (oC)
Figure 4. Output Voltage vs. Junction Temperature
6
5
4
3
2
1
0
-1
Ground Pin Current (mA)
-2
-3
-4 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
TA=25oC
C
=1.0µF, C
IN
Output Current (mA)
OUT
=2.2µF
350
I
=50mA
300
250
200
150
Dropout Voltage (mV)
100
50
0
-60 -40 -20 0 20 40 60 80 100 120 140
OUT
I
=100mA
OUT
I
=150mA
OUT
CIN=1.0µF, C
OUT
=2.2µF
Junction Temperature (oC)
Figure 5. Dropout Voltage vs. Junction Temperature
5000
AP2202-2.8
I
4000
3000
2000
1000
0
Ground Pin Current (µA)
-1000
-2000
-60 -40 -20 0 20 40 60 80 100 120 140
=50mA
OUT
I
=100mA
OUT
I
=150mA
OUT
VIN=3.8V,VEN=2.0V
CIN=1.0µF, C
OUT
=2.2µF
Junction Temperature (
o
C)
Figure 6. Ground Pin Current vs. Output Current
Figure 7. Ground Pin Current vs. Junction Temperature
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
18
Data Sheet
150mA RF ULDO REGULATOR AP2202
Typical Performance Characteristics (Continued)
20
AP2202-2.8
18
16
14
12
10
8
Enable Current (µA)
6
4
2
0
-60 -40 -20 0 20 40 60 80 100 120 140
VEN=1.8V
VEN=2.0V
VEN=3.0V
VEN=4.0V
VIN=3.8V, CIN=1.0µF
C
=2.2µF, I
OUT
OUT
=100µA
Junction Temperature (oC)
Figure 8. Enable Current vs. Junction Temperature
200
I
=10mA
OUT
150
=1.0µF, C
C
IN
Noise Measurement Filter: DIN Noise
OUT
=2.2µF
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
Enable Voltage (V)
1.0
0.9
0.8
0.7
0.6
-60 -40 -20 0 20 40 60 80 100 120 140
AP2202-2.8
VEN=on
VEN=off
CIN=1.0µF,C
VIN=3.8V,I
OUT
OUT
=5mA
=2.2µF
Junction Temperature (oC)
Figure 9. Enable Voltage vs. Junction Temperature
10
1
AP2202-2.8
=1.0µF, C
C
IN
V
=4.5V, I
IN
OUT
OUT
=2.2µF, C
=10mA
BYP
=100pF
V/ Hz
µ
100
0.1
Noise (µVrms)
0.01
50
0
10 100 1000 10000
Bypass Capacitor (pF)
Figure 10. Noise vs. Bypass Capacitor
Output Noise ( )
0.001 10 100 1k 10k 100k 1M 10M
Frequency (Hz)
Figure 11. Output Noise
vs. Frequency
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
19
Data Sheet
150mA RF ULDO REGULATOR AP2202
Typical Performance Characteristics (Continued)
150
100
50
(mA)
OUT
I
0
50
(mV)
0
OUT
V
-50
-100 0 1020304050 60708090100
Time (µs)
AP2202-2.8
Figure 12. Load Transient
(Conditions: VIN=3.8V, C
I
=5mA to 50mA, CIN=1.0
OUT
4
2
0
(V)
EN
V
3
2
1
0
(V)
OUT
V
-1
-2 0 100 200 300 400 500 600 700 800 900 1000
Time (µs)
=100pF, VEN=2V,
BYP
µF,
C
OUT
AP2202-2.8
=2.2µF)
5.8
4.8
3.8
(v)
IN
V
2.8
20
0
(mV)
-20
OUT
-40
V
-60 0 20 40 60 80 100 120 140 160 180 200
Time (µs)
AP2202-2.8
Figure 13. Line Transient
(Conditions: V
100
90
80
70
60
50
PSRR (dB)
40
30
20
10
0
10 100 1k 10k 100k 1M
=3.8V to 4.8V, VEN=2V, I
IN
C
BYP
=100pF, C
Frequency (Hz)
OUT
AP2202-2.8 VIN=3.8V, V
I
OUT
=10µF)
=10mA, C
RIPPLE
OUT
OUT
=1V
PP
=2.2µF
=100µA
Figure 14. VEN(on) vs. V
OUT
(Conditions: VEN=0V to 2V, VIN=3.8V, I
C
=open,
CIN=1.0
µF,
BYP
C
OUT
OUT
=30mA,
=2.2µF)
Figure 15. PSRR vs. Frequency
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
20
Data Sheet
150mA RF ULDO REGULATOR AP2202
Typical Performance Characteristics (Continued)
0.8
0.7
0.6
0.5
0.4
0.3
Power Dissipation (W)
0.2
0.1
0.0 25 50 75 100 125 150
SOT-23-5 Package No Heatsink
Ambient Temperature (oC)
Figure 16. Power Dissipation vs. Ambient Temperature
100
Figure 17. Power Dissipation vs. Ambient Temperature
0.8
0.7
0.6
0.5
0.4
0.3
Power Dissipation (W)
0.2
0.1
0.0 25 50 75 100 125 150
SOT-89 Package No Heatsink
Ambient Temperature (oC)
100
C
=1.0µF
10
1
ESR (Ω)
0.1
0.01 0 25 50 75 100 125 150
Stable Area
Output Current (mA)
OUT
No Bypass Capacitor
Figure 18. ESR vs. Output Current
10
1
ESR (Ω)
0.1
0.01
0 25 50 75 100 125 150
Stable Area
Output Current (mA)
Figure 19. ESR vs. Output Current
C
=2.2µF
OUT
No Bypass Capacitor
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
21
Data Sheet
150mA RF ULDO REGULATOR AP2202
Typical Performance Characteristics (Continued)
100
C
=4.7µF
10
OUT
No Bypass Capacitor
1
ESR (Ω)
0.1
0.01 0 25 50 75 100 125 150
Stable Area
Output Current (mA)
Figure 20. ESR vs. Output Current
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
22
Data Sheet
150mA RF ULDO REGULATOR AP2202
Typical Application
V
IN
V
IN
C
1.0 µ F
C
IN
IN
VIN=3.8V
AP2202-2.8
V
IN
EN
GND
AP2202-ADJ
V
IN
V
OUT
BYP
C
100pF
V
OUT
ADJEN GND
C
BYP
optional
BYP
=2.8V
V
OUT
C
OUT
2.2µF1.0µF
R1
R2
V
=1.25* (1+R2/R1)
OUT
V
OUT
C
2.2 µ F
OUT
V
OUT
Figure 21. Typical Application of AP2202 (Note 7)
Note 7: Dropout voltage is 165mV when TA=25oC. In order to obtain a normal output voltage, V
+0.165V is the minimum
OUT
input voltage which will result a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage
+0.5V to 13.2V. For AP2202-2.8 version, its input voltage can be set from 3.3V(V
is V
OUT
Adj version, any value from V
voltage. For example, if 3.0V output voltage is required, R1 and R2 can be set to 10kΩ and 14kΩ respectively. For Adj ver-
+0.5V to 13.2V is available. R1 and R2 must be correctly selected when setting the output
OUT
+0.5V) to 13.2V. For that of
OUT
sion, we recommend 2.3V as minimum output voltage.
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
23
Data Sheet
150mA RF ULDO REGULATOR AP2202
Application Information
Input Capacitor
A 1
µF minimum capacitor is recommended to be
placed between V
and GND.
IN
Output Capacitor
It is required to prevent oscillation. 1.0 is recommended when C
mum is recommended when C
is unused. 2.2µF mini-
BYP
BYP
µF minimum
is 100pF. The out-
put capacitor may be increased to improve transient response.
Noise Bypass Capacitor
Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed.
The start-up speed of the AP2202 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit C
and leave BYP open.
BYP
Power Dissipation
Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction tempera­ture must be within the range specified under abso­lute maximum ratings to avoid thermal shutdown.
To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16,17), using: T
= PD*θJA + T
J
PD=(VIN-V
Where: T
ings for the junction temperature; V
A
)*I
OUT
J≤TJ(max)
OUT+VIN*IGND
, T
is absolute maximum rat-
J(max)
IN*IGND
can be
ignored due to its small value.
T
is 150
J(max)
age and 165
o
C, θ
JA
o
C/W for SOT-89 package, no heatsink is
is 200
o
C/W for SOT-23-5 pack-
required since the package alone will dissipate enough heat to satisfy these requirements unless the calculated value for power dissipation exceeds the limit.
Example: For 2.8V version packaged in SOT-23-5,
I
=150mA, TA=50oC, V
OUT
o
(150
C-50oC)/(0.15A*200oC/W)+2.8V=6.133V
IN(Max)
is:
Therefore, for good performance, please make sure that input voltage is less than 6.133V without heat-
sink when T
=50oC.
A
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
24
Data Sheet
150mA RF ULDO REGULATOR AP2202
Mechanical Dimensions
SOT-23-5 Unit: mm(inch)
2.820(0.111)
3.020(0.119)
)
)
4
2
2
1
0
0
.
.
0
)
)
9
)
)
4
6
0
1
1
1
.
.
0
0
(
(
0
0
5
5
6
9
.
.
2
2
7
5
6
0
0
.
.
0
0
(
(
0
0
0
0
5
7
.
.
1
1
0.200(0.008)
0
(
(
0
0
0
0
6
3
.
.
0
0
0.100(0.004)
0.200(0.008)
0.950(0.037)
P
Y
T
) 7 5 0
.
X
0
A
( 0
M
5 4
. 1
1.800(0.071)
2.000(0.079)
0.300(0.012)
0.400(0.016)
0
0
0
0
0
9
.
.
1
0
0
3
0
0
7
.
0
R
0
(
0
0
0
.
0
(
0
5
1
.
5
3
0
(
0
.
)
1
5
0
.
0
(
)
8
2
0
.
0
(
F
E
0°
8°
)
0
0
0
.
)
6
0
0
.
)
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
25
Data Sheet
150mA RF ULDO REGULATOR AP2202
Mechanical Dimensions (Continued)
SOT-89 Unit: mm(inch)
4.400(0.173)
1.550(0.061)REF
4.600(0.181)
1.030(0.041)REF
45
1.400(0.055)
1.600(0.063)
3.950(0.156)
4.250(0.167)
0.900(0.035)
1.100(0.043)
R0.150(0.006)
0.320(0.013)
0.520(0.020)
3.000(0.118) TYP
2.300(0.091)
2.600(0.102)
0.320(0.013)
0.520(0.020)
0.480(0.019)
3
2.210(0.087)REF
10
3
1.500(0.059)
1.800(0.071)
2.060(0.081)REF
10
0.350(0.014)
0.450(0.018)
0.320(0.013)REF
1.620(0.064)REF
Jul. 2011 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
26
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
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