Diodes AP2101, AP2111 User Manual

T
AP2101/AP2111
Description
The AP2101 and AP2111 are integrated high-side power switches
optimized for Universal Serial Bus (USB) and other hot-swap
applications. The family of devices complies with USB 2.0 and
available with both polarities of Enable input. They offer current and
thermal limiting and short circuit protection as well as controlled rise
time, under-voltage lockout and auto-discharge functionalities. A
7ms deglitch capability on the open-drain Flag output prevents false
over-current reporting and does not require any external components.
All devices are available in SO-8 and MSOP-8EP packages.
Features
Single USB port power switches with auto-discharge
Short-circuit current and thermal protection
2.45A accurate current limiting
Fast transient response time: 5s
90m
Reverse Current Blocking
Input voltage range: 2.7V – 5.5V
0.6ms typical rise time
Very low shutdown current: 1A (max)
Fault report (FLG) with blanking time (7ms typ)
ESD protection: 4kV HBM, 300V MM
Active low (AP2101) or active high (AP2111) enable
Ambient temperature range: -35°C to 85°C
SO-8 and MSOP-8EP (Exposed Pad): Available in “Green”
UL Recognized, File Number E322375
IEC60950-1 CB Scheme Certified
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
on-resistance
Molding Compound (No Br, Sb)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Pin Assignments
( Top View )
GND
IN
IN
EN
GND
IN
IN
EN
1
2
3
4
SO-8
( Top View )
1
2
3
4
MSOP-8EP
8
NC
7
OUT
6
OU
5
FLG
NC
8
7
OUT
6
OUT
5
FLG
Applications
Consumer electronics – LCD TV & Monitor, Game Machines
Communications – Set-Top-Box, GPS, Smartphone
Computing – Laptop, Desktop, Servers, Printers, Docking Station,
HUB
Typical Applications Circuit
AP2111 Enable Active High
Power Supply
2.7V to 5.5V
10k
OFF
10uF
ON
0.1uF
IN
FLG
EN
GND
OUT
0.1uF 120uF
Load
AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
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January 2013
© Diodes Incorporated
AP2101/AP2111
Available Options
Part Number Channel
Enable Pin
(EN)
AP2101 1 Active Low 2.45A 2.0A
AP2111 1 Active High 2.45A 2.0A
Current Limit
(Typical)
Recommended Maximum Continuous Load Current
Pin Descriptions
Pin
Name
Pin Number
SO-8 MSOP-8EP
Functions
GND 1 1 Ground
IN
2, 3 2, 3 Voltage input pin (all IN pins must be tied together externally)
EN 4 4 Enable input, active low (AP2101) or active high (AP2111)
FLG 5 5 Over-current and over-temperature fault report; open-drain flag is active low when triggered
OUT
NC
6, 7 6, 7 Voltage output pin (all OUT pins must be tied together externally)
8 8 No internal connection; recommend tie to OUT pins
Exposed pad.
Exposed tab Exposed tab
It should be connected to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path.
Functional Block Diagram
IN
UVLO
EN
Absolute Maximum Ratings (@T
Current
Sense
Driver
Thermal
Sense
= +25°C, unless otherwise specified.)
A
Current
Limit
Discharge
Control
Deglitch
OUT
FLG
GND
Symbol Parameter Ratings Units
ESD HBM Human Body Model ESD Protection 4 kV
ESD MM Machine Model ESD Protection 300 V
VIN
V
OUT
V
EN , VFLG
T
I
LOAD
J(MAX)
TST
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices
Note: 4. UL Recognized Rating from -30°C to 70°C (Diodes qualified
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
Input Voltage 6.5 V
Output Voltage
VIN +0.3
V
Enable Voltage 6.5 V
Maximum Continuous Load Current Internal Limited A
Maximum Junction Temperature 150 °C
Storage Temperature Range (Note 4) -65 to +150 °C
T
from -65°C to 150°C)
ST
AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
2 of 14
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January 2013
© Diodes Incorporated
AP2101/AP2111
Recommended Operating Conditions (@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Min Max Units
V
I
OUT
T
VIL
VIH
IN
A
Input voltage 2.7 5.5 V
Output Current 0 2.0 A
Operating Ambient Temperature -35 85
°C
EN Input Logic Low Voltage 0 0.8 V
EN Input Logic High Voltage 2
VIN
V
Electrical Characteristics (@T
= +25°C, VIN = +5.0V, unless otherwise specified.)
A
Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit
V
UVLO
I
SHDN
I
LEAK
I
REV
R
DS(ON)
I
LIMIT
I
TRIG
I
SHORT
T
SHORT
V
V
I
SINK
T
D(ON)
T
D(OFF)
R
T
BLANK
R
T
SHDN
T
JA
Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path for the external storage capacitor. This is suitable only to discharge filter capacitors for limited time and cannot dissipate steady state currents greater than 8mA.
7. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
8. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.
Input UVLO
Input Shutdown Current
Input Quiescent Current
I
Q
R
= 1k
LOAD
Disabled, I
Enabled, I
OUT
OUT
= 0
= 0
Input Leakage Current Disabled, OUT grounded 1 µA
Reverse Leakage Current
Switch On-Resistance
Over-Load Current Limit
Current Limiting Trigger Threshold
Short-Circuit Current Limit
Short-Circuit Response Time
EN Input Logic Low Voltage
IL
EN Input Logic High Voltage
IH
EN Input leakage
Output Turn-On Delay Time
Output Turn-On Rise Time
TR
Output Turn-Off Delay Time
Output Turn-Off Fall Time
TF
FLG Output FET On-Resistance
FLG
FLG Blanking Time
Discharge Resistance (Note 6)
DIS
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis 25
HYS
Thermal Resistance Junction-to­Ambient
Disabled, V
= 5V, I
V
IN
IN
OUT
= 0V, V
= 1.5A
OUT
= 5V, I
T
A
at VIN
REV
= +25°C
MSOP8-EP 90 115
SO-8 95 115
-40°C TA  +85°C
= 25°C
T
VIN = 3.3V, I
V
= 5V, V
IN
= 1.5A
OUT
= 4.5V, CL=120µF
OUT
A
-40°C T
+85°C
A
Output Current Slew rate (<100A/s) , CL = 100µF
Enabled into short circuit, CL = 100µF
V
= 0V to I
OUT
V
= 2.7V to 5.5V
IN
V
= 2.7V to 5.5V
IN
V
= 5V
EN
CL = 1µF, R
CL = 1µF, R
CL = 1µF, R
CL = 1µF, R
I
=10mA, CL=100µF
FLG
C
= 10µF, CL = 100µF
IN
VIN = 5V, disabled, I
Enabled, R
LOAD
LOAD
LOAD
LOAD
LOAD
OUT
= 1k
= I
(short applied to output)
LIMIT
= 10
= 10
= 10
= 10
= 1mA
OUT
SO-8 (Note 7) 110
MSOP-8EP (Note 8) 60
1.6 1.9 2.5 V
0.5 1 µA
45 70 µA
0.05 µA
140
m
115 140
170
2.1 2.45 2.8 A
2.5 A
2.5 A
5 µs
0.8 V
2 V
1 µA
50 µs
0.6 1.5 ms
4 µs
0.03 0.1 ms
20 40
4 7 15 ms
290
140
°C
°C
°C/W
°C/W
AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
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January 2013
© Diodes Incorporated
Typical Performance Characteristics
AP2101/AP2111
Ven 5V/div
Vout 2V/div
V
EN
V
OUT
50%
T
D(ON)
T
10%
50%
T
R
90%
D(OFF)
90%
10%
T
F
V
EN
50%
T
T
D(ON)
V
OUT
10%
50%
T
R
90%
D(OFF)
90%
10%
T
F
Figure 1. Voltage Waveforms: AP2101 (left), AP2111 (right)
All Enable Plots are for AP2111 Active High
Turn-On Delay and Rise Time
CL = 1µF
TA = +25°C
RL = 5
Ven 5V/div
Vout 2V/div
Turn-Off Delay and Fall Time
CL = 1µF
TA = 25°C
RL = 5
400µs/div
400µs/div
Ven 5V/div
Vout 2V/div
Turn-On Delay and Rise Time
400µs/div
CL = 100µF
TA = +25°C
RL = 5
Ven 5V/div
Vout 2V/div
Turn-Off Delay and Fall Time
CL = 100µF
TA = +25°C
RL = 5
400µs/div
AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
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January 2013
© Diodes Incorporated
Typical Performance Characteristics (cont.)
Short Circuit Current,
Device Enabled Into Short
AP2101/AP2111
Inrush Current
Ven 5V/div
Iout 500mA/div
Vflag 5V/div
Iout 1A/div
V
IN
TA = +25°C
CL = 100µF
500us/div
0.6 Load Connected to Enabled Device
V
IN
TA = +25°C
CL = 100µF
= 5V
= 5V
Ven 5V/div
CL=100µF
Iout 500mA/div
CL=220µF
CL=470µF
1ms/div
Short Circuit with Blanking Time and Recovery
Vout 5V/div
Vflag 5V/div
Iout 2A/div
V
= 5V
IN
= +25°C
T
A
R
= 2.5
L
V
= 5V
IN
TA = +25°C
CL = 100µF
Power On
Vflag 5V/div
Iout 1A/div
Vin 5V/div
Vout 5V/div
AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
2ms/div
50ms/div
Power Off
TA = +25°C
CL = 100µF
RL = 2.5
1ms/div
TA = +25°C
CL = 100µF
RL = 2.5
Vflag 5V/div
Iout 1A/div
Vin 5V/div
Vout 5V/div
10ms/div
5 of 14
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January 2013
© Diodes Incorporated
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