Diodes AP1662 User Manual

Data Sheet

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662

General Description

The AP1662 is an active power factor control IC which is designed mainly for use as a pre-converter in electronic ballast, AC-DC adapter and off-line SMPS applications. . The IC includes an internal start-up timer for stand-alone applications, a one-quadrant multiplier to realize near unity power factor and a zero current detector to ensure DCM boundary conduction operation.

The totem pole output stage is capable of driving power MOSFET with 600mA source current and 800mA sink current.

Designed with advanced BiCMOS process, the AP1662 features low start-up current, low operation current and low power dissipation. The AP1662 also has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis and multiplier output clamp to limit maximum peak current.

The AP1662 meets IEC61000-3-2 standard even at one-quadrant load and THD lower than 10% at high-end line voltage and full load.

The IC is available in SOIC-8 and DIP-8 packages.

Features

Comply with IEC61000-3-2 Standard

•

• Proprietary Design for Minimum THD

• Zero Current Detection Control for DCM Boundary Conduction Mode

• Adjustable Output Voltage with Precise Over-voltage Protection

• Low Start-up Current with 40µA Typical Value

• Low Quiescent Current with 2.5mA Typical Va lu e

• 1% Precision Internal Reference Voltage @ T

=25°C

J

• Internal Start-up Timer

• Disable Function for Reduced Current Consumption

• Totem Pole Output with 600mA Source and 800mA Sink Current Capability

• Under-voltage Lockout with 2.5V Hysteresis

Applications

• Electronic Ballast

• AC-DC Adapter

• Off-line SMPS

• Single Stage PFC LED Driver

SOIC-8 DIP-8

Figure 1. Package Types of AP1662

Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

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Data Sheet

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662

Pin Configuration

M Package

（SOIC-8）

INV VCC

1

8

COMP GD

2

7

MULT GND

3

6

CS ZCD

4

5

P Package

（DIP-8）

INV VCC

1

8

COMP GD

2

7

MULT GND

3

6

CS ZCD

4

5

Figure 2. Pin Configuration of AP1662 (Top View)

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Data Sheet

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662

Pin Description

Pin Number Pin Name Function

1 INV Inverting input of the error amplifier

2 COMP Output of the error amplifier

3 MULT Input of the multiplier

4 CS Input of the current control loop comparator

5 ZCD

6 GND

7 GD Gate driver output

Zero current detection input. If it is connected to GND, the device is disabled Ground. Current return for gate driver and control circuits of the IC

8 VCC Supply voltage of gate driver and control circuits of the IC

Functional Block Diagram

Figure 3. Functional Block Diagram of AP1662

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Data Sheet

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662

Ordering Information

AP1662 -

Circuit Type E1: Lead Free

Package

SOIC-8

G1: Green

Package Blank: Tube M: SOIC-8

P: DIP-8

Temperature

Range

-40 to 105°C

TR: Tape & Reel

Part Number Marking ID

Lead Free Green Lead Free Green

AP1662M-E1 AP1662M-G1 1662M-E1 1662M-G1 Tube

AP1662MTR-E1 AP1662MTR-G1 1662M-E1 1662M-G1 Tape & Reel

Packing

Type

DIP-8

-40 to 105°C

AP1662P-E1 AP1662P-G1 AP1662P-E1 AP1662P-G1 Tube

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages.

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Data Sheet

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Power Supply Voltage VCC Self-limited V

Operating Supply Current ICC 30 mA

Input/Output of Error Amplifier, Input of Multiplier

Current Sense Input VCS -0.3 to 7 V

V

INV

V

, V

MULT

COMP

,

-0.3 to 7 V

Zero Current Detector Input I

Power Dissipation and Thermal characteristics @ T

=50°C

A

Thermal Resistance (Junction to Ambient)

P

R

ZCD

TOT

θJA

mA

Sink 10

DIP-8 1

W

SOIC-8 0.65

DIP-8 100

ºC/W

SOIC-8 150

Operating Junction Temperature TJ -40 to 150 ºC

Source -50

Storage Temperature Range T

Lead Temperature (Soldering, 10 Seconds)

ESD (Human Body Model) V

ESD (Machine Model) V

-65 to 150 ºC

STG

260 ºC

T

LEAD

ESD(HBM)

ESD(MM)

3000 V

200 V

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.

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Data Sheet

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662

Electrical Characteristics

V

=12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified.

CC

Parameter Symbol Test Conditions Min Typ Max Unit Under Voltage Lockout Section

Turn-on Threshold V

Turn-off Threshold V

Hysteresis V

VCC Rising 11 12 13 V

CC-ON

VCC Falling 8.7 9.5 10.3 V

CC-OFF

2.2 2.5 2.8 V

CC-HYS

VCC Operating Range VCC After turn-on 10.3 22 V

Zener Voltage V

ICC=20mA 22 24 V

Z

Total Supply Current Section

Start-up Current I

START-UP

Operating Supply Current ICC

Quiescent Current IQ After turn on 2.5 3.75 mA

Quiescent Current IQ

VCC=11V before turn-on 40 70

Frequency=70kHz 3.5 5

In OVP condition

=2.7V

V

INV

≤150mV, VCC>V

V

ZCD

V

≤150mV, VCC<V

ZCD

CC-OFF

1.4 2.2

2.2 mA

20 50 90

µA

mA

µA

Error Amplifier Section

=25ºC 2.465 2.5 2.535

T

Voltage Feedback Input Threshold

V

INV

J

10.3V<VCC<20V 2.44 2.56

V

Line Regulation VCC=10.3V to 20V 2 5 mV

Input Bias Current I

V

INV

=0 to 3V -0.1 -1

INV

µA

Voltage Gain GV Open Loop 60 80 dB

Gain Bandwidth GB 1 MHz

Output Voltage

Output Current

Upper Clamp Voltage Lower Clamp Voltage Source Current

Sink Current I

V

I

COMP-H

COMP-L

COMP-H

COMP-L

I

SOURCE

I

SINK

V

COMP

V

COMP

=0.5mA 5.15 5.55 5.85

V

=0.5mA 2.1 2.25 2.4

=4V, V

=2.4V -2 -4 -8

INV

mA

=4V, V

=2.6V 2.5 4.5

INV

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