Diodes AP1662 User Manual

Page 1
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
General Description
The AP1662 is an active power factor control IC which is designed mainly for use as a pre-converter in electronic ballast, AC-DC adapter and off-line SMPS applications. . The IC includes an internal start-up timer for stand-alone applications, a one-quadrant multiplier to realize near unity power factor and a zero current detector to ensure DCM boundary conduction operation.
The totem pole output stage is capable of driving power MOSFET with 600mA source current and 800mA sink current.
Designed with advanced BiCMOS process, the AP1662 features low start-up current, low operation current and low power dissipation. The AP1662 also has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis and multiplier output clamp to limit maximum peak current.
The AP1662 meets IEC61000-3-2 standard even at one-quadrant load and THD lower than 10% at high-end line voltage and full load.
The IC is available in SOIC-8 and DIP-8 packages.
Features
Comply with IEC61000-3-2 Standard
Proprietary Design for Minimum THD
• Zero Current Detection Control for DCM Boundary Conduction Mode
• Adjustable Output Voltage with Precise Over-voltage Protection
Low Start-up Current with 40µA Typical Value
• Low Quiescent Current with 2.5mA Typical Va lu e
• 1% Precision Internal Reference Voltage @ T
=25°C
J
• Internal Start-up Timer
• Disable Function for Reduced Current Consumption
• Totem Pole Output with 600mA Source and 800mA Sink Current Capability
Under-voltage Lockout with 2.5V Hysteresis
Applications
Electronic Ballast
• AC-DC Adapter
• Off-line SMPS
Single Stage PFC LED Driver
SOIC-8 DIP-8
Figure 1. Package Types of AP1662
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Pin Configuration
M Package
SOIC-8
INV VCC
1
8
COMP GD
2
7
MULT GND
3
6
CS ZCD
4
5
P Package
DIP-8
INV VCC
1
8
COMP GD
2
7
MULT GND
3
6
CS ZCD
4
5
Figure 2. Pin Configuration of AP1662 (Top View)
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Pin Description
Pin Number Pin Name Function
1 INV Inverting input of the error amplifier
2 COMP Output of the error amplifier
3 MULT Input of the multiplier
4 CS Input of the current control loop comparator
5 ZCD
6 GND
7 GD Gate driver output
Zero current detection input. If it is connected to GND, the device is disabled Ground. Current return for gate driver and control circuits of the IC
8 VCC Supply voltage of gate driver and control circuits of the IC
Functional Block Diagram
Figure 3. Functional Block Diagram of AP1662
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Ordering Information
AP1662 -
Circuit Type E1: Lead Free
Package
SOIC-8
G1: Green
Package Blank: Tube M: SOIC-8
P: DIP-8
Temperature
Range
-40 to 105°C
TR: Tape & Reel
Part Number Marking ID
Lead Free Green Lead Free Green
AP1662M-E1 AP1662M-G1 1662M-E1 1662M-G1 Tube
AP1662MTR-E1 AP1662MTR-G1 1662M-E1 1662M-G1 Tape & Reel
Packing
Type
DIP-8
-40 to 105°C
AP1662P-E1 AP1662P-G1 AP1662P-E1 AP1662P-G1 Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages.
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VCC Self-limited V
Operating Supply Current ICC 30 mA
Input/Output of Error Amplifier, Input of Multiplier
Current Sense Input VCS -0.3 to 7 V
V
INV
V
, V
MULT
COMP
,
-0.3 to 7 V
Zero Current Detector Input I
Power Dissipation and Thermal characteristics @ T
=50°C
A
Thermal Resistance (Junction to Ambient)
P
R
ZCD
TOT
θJA
mA
Sink 10
DIP-8 1
W
SOIC-8 0.65
DIP-8 100
ºC/W
SOIC-8 150
Operating Junction Temperature TJ -40 to 150 ºC
Source -50
Storage Temperature Range T
Lead Temperature (Soldering, 10 Seconds)
ESD (Human Body Model) V
ESD (Machine Model) V
-65 to 150 ºC
STG
260 ºC
T
LEAD
ESD(HBM)
ESD(MM)
3000 V
200 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Electrical Characteristics
V
=12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified.
CC
Parameter Symbol Test Conditions Min Typ Max Unit Under Voltage Lockout Section
Turn-on Threshold V
Turn-off Threshold V
Hysteresis V
VCC Rising 11 12 13 V
CC-ON
VCC Falling 8.7 9.5 10.3 V
CC-OFF
2.2 2.5 2.8 V
CC-HYS
VCC Operating Range VCC After turn-on 10.3 22 V
Zener Voltage V
ICC=20mA 22 24 V
Z
Total Supply Current Section
Start-up Current I
START-UP
Operating Supply Current ICC
Quiescent Current IQ After turn on 2.5 3.75 mA
Quiescent Current IQ
VCC=11V before turn-on 40 70
Frequency=70kHz 3.5 5
In OVP condition
=2.7V
V
INV
150mV, VCC>V
V
ZCD
V
150mV, VCC<V
ZCD
CC-OFF
CC-OFF
1.4 2.2
2.2 mA
20 50 90
µA
mA
µA
Error Amplifier Section
=25ºC 2.465 2.5 2.535
T
Voltage Feedback Input Threshold
V
INV
J
10.3V<VCC<20V 2.44 2.56
V
Line Regulation VCC=10.3V to 20V 2 5 mV
Input Bias Current I
V
INV
=0 to 3V -0.1 -1
INV
µA
Voltage Gain GV Open Loop 60 80 dB
Gain Bandwidth GB 1 MHz
Output Voltage
Output Current
Upper Clamp Voltage Lower Clamp Voltage Source Current
Sink Current I
V
V
I
COMP-H
COMP-L
COMP-H
COMP-L
I
SOURCE
I
SINK
V
COMP
V
COMP
=0.5mA 5.15 5.55 5.85
V
=0.5mA 2.1 2.25 2.4
=4V, V
=2.4V -2 -4 -8
INV
mA
=4V, V
=2.6V 2.5 4.5
INV
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Electrical Characteristics (Continued)
V
=12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified.
CC
Parameter Symbol Test Conditions Min Typ Max Unit Multiplier Section
Linear Input Voltage Range Output Maximum Slope
V
0 to 3
V
MULT
VCS/
MULT
Gain k V
Current Sense Section
V
: 0 to 0.5V,
MULT
=Upper Clamp Voltage
V
COMP
=1V, V
MULT
COMP
1.65 1.9
=4V 0.6 0.75 0.9 1/V
0 to
3.5
V
Input Bias Current ICS VCS=0V -1
V
Current Sense Offset Voltage Current Sense Reference Clamp
V
V
Delay to Output t
CS-OFFSET
CS-CLAMP
d(H-L
) 200 350
=0V 30
MULT
V
=2.5V 5
MULT
= Upper Clamp
V
COMP
Voltage, V
MULT
= 2.5V
1.6 1.7 1.8
µA
mV
V
ns
Zero Current Detection Section
Arming Voltage (positive-going edge) Triggering Voltage (negative-going edge)
Upper Clamp Voltage V
Lower Clamp Voltage
Source Current Capability Sink Current Capability
Sink Bias Current I
(Note 2) 2.1
V
ZCDA
(Note 2) 1.6
V
ZCDT
=20µA 4.5 5.1 5.9
I
ZCD
ZCD-H
V
ZCD-L
I
ZCD-SR
I
ZCD-SN
ZCD-B
I
=3mA 4.7 5.2 6.1
ZCD
I
= -3mA 0.3 0.65 1
ZCD
-2.5 -10
3
1V ≤ V
4.5 V 2
ZCD
V
V
V
V
mA
mA
µA
Disable Threshold V
Disable Hysteresis V
Restart Current After Disable
ZCD-DIS
ZCD-HYS
I
ZCD-RES
150 200 250
100
V
ZCD<VDIS
, VCC>V
-80 -120
CC-OFF
mV
mV
µA
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
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K
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Electrical Characteristics (Continued)
V
=12V, TJ =-25°C to 125°C, CO=1nF, unless otherwise specified.
CC
Parameter Symbol Test Conditions Min Typ Max Unit Drive Output Section
I
GD-SOURCE
V
Dropout Voltage
Output Voltage Rise Time
Output Voltage Fall Time tF 30 70
Output Clamp Voltage V
UVLO Saturation VOS
OH
VOL I
t
R
O-CLAMP
I
GD-SOURCE
GD-SINK
40 80
I
GD-SOURCE
V
CC
V
CC
I
SIN
=200mA 2.5 3
=20mA 2 2.8
=200mA 0.9 1.9
=20V =0 to V
=10mA
=5mA
CC-ON
,
9 11 13
1.1
Output Over Voltage Section
OVP Triggering Current I
Static OVP Threshold V
OVP
OVP_TH
35 40 45 µA
2.1 2.25 2.4
Starter
Start Timer Period t
START
75 130 300
V
ns
ns
V
V
V
µs
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Typical Performance Characteristics
3.0
2.5
2.0
1.5
1.0
Supply Current (mA)
0.5
0.0 0 5 10 15 20 25
Supply Voltage (V)
CO=1nF f=70kHz
=25oC
T
J
12.5
12.0
11.5
11.0
10.5
Voltage (V)
10.0
9.5
9.0
-50 0 50 100 150
V
CC-OFF
Junction Temperature (oC)
V
CC-ON
Figure 4. Supply Current vs. Supply Voltage Figure 5. Start-up & UVLO vs. T
8
4
2
1
(mA)
CC
I
0.0625
0.03125
VCC=12V
0.5
C
=1nF
O
0.25
f=70kHz
0.125
-50 0 50 100 150
Junction Temperature (
Quiescent
Disabled or during OVP
Before start-up
o
C)
28
27
26
(V)
25
CC-CLAMP
V
24
23
22
-50 0 50 100 150
Junction Temperature (oC)
Figure 6. ICC Consumption vs. TJ Figure 7. VCC Zener Voltage vs. TJ
J
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Typical Performance Characteristics (Continued)
2.60
2.55
2.50
(V)
REF
V
2.45
2.40
-50 0 50 100 150
Junction Temperature (
Figure 8. Feedback Reference Voltage vs. TJ Figure 9. OVP Current vs. T
500
400
300
(ns)
200
d(H-L)
t
100
0
-50 0 50 100 150
Junction Temperature (
Figure 10. Delay-to-Output vs. TJ Figure 11. E/A Output Clamp Levels vs. TJ
VCC=12V
O
C)
VCC=12V
o
C)
43.0
42.5
42.0
41.5
41.0
(µA)
OVP
I
40.5
40.0
39.5
39.0
-50 0 50 100 150
Junction Temperature (
6.0
5.5
5.0
4.5
(V)
4.0
COMP
V
3.5
3.0
2.5
2.0
-50 0 50 100 150
Upper Clamp
Lower Clamp
Junction Temperature (oC)
VCC=12V
o
C)
J
VCC=12V
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Typical Performance Characteristics (Continued)
2.0
1.0
1.8
1.6
(V)
1.4
CS-CLAMP
V
1.2
1.0
-50 0 50 100 150
Junction Temperature (
VCC=12V V
COMP
o
C)
=Upper Clamp
0.8
VCC=12V V
=4V
0.6
0.4
Multiplier Gain
0.2
0.0
-50 0 50 100 150
Junction Temperature (
COMP
V
=1V
MULT
o
C)
Figure 12. V
CS-CLAMP
0
-2
-4
(mA)
ZCD
I
-6
-8
-50 0 50 100 150
Junction Temperature (
Figure 14. ZCD Source Capability vs. TJ Figure 15. ZCD Clamp Levels vs. TJ
vs. TJ Figure 13. Multiplier Gain vs. T
VCC=12V V
ZCD
=Lower Clamp
o
C)
7
6
5
4
(V)
ZCD
3
V
2
1
0
-50 0 50 100 150
Junction Temperature (
Upper Clamp
Lower Clamp
VCC=12V I
= + 2.5mA
ZCD
o
C)
J
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Typical Performance Characteristics (Continued)
200
190
180
170
160
(µS)
START
150
t
140
130
120
-50 0 50 100 150
Junction Temperature (
1.8
VCC=12V
o
C)
1.6
1.4
1.2
1.0
(V)
CS
0.8
V
0.6
0.4
0.2
0.0
0.00.51.01.52.02.53.03.54.04.5
V
=5.0
COMP
=4.5
COMP
V
V
=MAX
COMP
V
V
=4.0
COMP
V
(V)
MULT
COMP
V
V
V
V
=3.5
COMP
COMP
COMP
COMP
=3.2
=3.0
=2.8
=2.6
Figure 16. Start-up Timer vs. TJ Figure 17. Multiplier Characteristics
I
GD
(mA)
6
5
4
(V)
3
GD
V
2
1
0
0 200 400 600 800 1000
TJ=25oC VCC=11V SINK
Figure 18. Gate-driver Output Low Saturation Figure 19. Gate-driver Output High Saturation
VGD (V)
V
-2.0
CC
-2.5
V
CC
-3.0
V
CC
V
-3.5
CC
V
-4.0
CC
0 100 200 300 400 500 600 700
TJ=25oC VCC=11V SOURCE
I
(mA)
GD
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Typical Performance Characteristics (Continued)
15
1.1
(V)
V
1.0
0.9
0.8
GD_OFF
0.7
0.6
14
13
(V)
12
GD_CLAMP
V
11
VCC=20V
VCC=0V
10
-50 0 50 100 150
Junction Temperature (
o
C)
0.5
-50 0 50 100 150
Junction Temperature (oC)
Figure 20. Gate-driver Clamp vs. TJ Figure 21. UVLO Saturation vs. T
J
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×−×
=
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Functional Block Description
AP1662 is a high performance power factor correction controller which operates in DCM boundary conduction mode. The PFC converter's switch will be turned on when the inductor current reduces to zero and turned off when the sensed inductor current reaches the required reference which is decided by the output of multiplier.
Error Amplifier and Over-Voltage Protection
The error amplifier regulates the PFC output voltage. The internal reference on the non-inverting input of the error amplifier is 2.5V. The error amplifier's inverting input (INV) is connected to an external resistor divider which senses the output voltage. The output of error amplifier is one of the two inputs of multiplier. A compensation loop is connected outside between INV and the error amplifier output. Normally, the compensation loop bandwidth is set very low to realize high power factor for PFC converter.
To make the over voltage protection fast, the internal OVP function is added. If the output over voltage happens, excess current will flow into the output pin of the error amplifier through the feedback compensation capacitor. (see Figure 22) The AP1662 monitors the current flowing into the error amplifier output pin. When the detected current is higher than 40µA, the dynamic OVP is triggered. The IC will be
Figure 22. Error Amplifier and OVP Block
disabled and the drive signal is stopped. If the output over voltage lasts so long that the output of error amplifier goes below 2.25V, static OVP will take place. Also the IC will be disabled until the output of error amplifier goes back to its linear region. R1 and R2 (see Fig. 22) will be selected as below:
1
V
R
R
O
1
=
5.22
V
V
OVP
40
A
µ
R
1
=
Multiplier
The multiplier has two inputs. One (Pin 3) is the divided AC sinusoidal voltage which makes the current sense comparator threshold voltage vary from zero to peak value. The other input is the output of error amplifier (Pin 2). In this way, the input average current wave will be sinusoidal as well as reflects the load status. Accordingly a high power factor and good THD are achieved. The multiplier transfer character is designed to be linear over a wide dynamic range, namely, 0V to 3V for Pin 3 and 2V to
5.8V for Pin 2. The relationship between the multiplier output and inputs is described as below equation
VVkV
)5.2(
MULTCOMPCS
where VCS (Multiplier output) is the reference for the current sense, k is the multiplier gain, V
COMP
voltage on pin 2 (error amplifier output) and V the voltage on pin 3.
Current Sense/Current Sense Comparator
The PFC switch's turn-on current is sensed through an external resistor in series with the switch. When the sensed voltage exceeds the threshold voltage (the multiplier output), the current sense comparator will become low and the external MOSFET will be turned off. This insures a cycle-by-cycle current mode control operation. The maximum current sense reference is 1.8V. The max value usually happens at startup process or abnormal conditions such as short load.
is the
is
MULT
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Functional Block Description Continued
Zero Current Detection
AP1662 is a DCM boundary conduction current mode PFC controller. Usually, the zero current detection (ZCD) voltage signal comes from the auxiliary winding of the boost inductor. When the
ZCD pin voltage decreases below 1.6V, the gate drive signal becomes high to turn on the external MOSFET. 500mV of hysteresis is provided to avoid false triggering. The ZCD pin can be used for disabling the IC. Making its voltage below 0.15V or short to the ground will disable the device thus reduce the IC supply current consumption.
Typical Application
Figure 23. 85 to 265V Wide Range Input 90W PFC Demo Board Electrical Schematic Circuit
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Mechanical Dimensions
SOIC-8 Unit: mm(inch)
4.700(0.185)
5.100(0.201)
7
°
7
°
1.270(0.050) TYP
0.100(0.004)
0.300(0.012)
1.350(0.053)
1.750(0.069)
0.675(0.027)
0.725(0.029)
D
2
D
1
:
0
0.320(0.013)
5.800(0.228)
6.200(0.244)
0.800(0.031)
°
8
°
8
0.200(0.008)
0
°
8
°
1° 5°
0.450(0.017)
0.800(0.031)
)
6
0
0
.
0
(
0
5
1
.
0
R
1.000(0.039)
0.330(0.013)
0.510(0.020)
R0.150(0.006)
3.800(0.150)
4.000(0.157)
0.190(0.007)
0.250(0.010)
0.900(0.035)
Note: Eject hole, oriented hole and mold mark is optional.
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Mechanical Dimensions (Continued)
DIP-8 Unit: mm(inch)
0.700(0.028)
°
6
1.524(0.060) TYP
7.620(0.300)TYP
°
6
5°
3.710(0.146)
4.310(0.170)
3.000(0.118)
3.600(0.142)
0.254(0.010)TYP
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
4
°
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
9.000(0.354)
9.400(0.370)
3.200(0.126)
3.600(0.142)
0.510(0.020)MIN
2.540(0.100) TYP
6.200(0.244)
6.600(0.260)
4
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
Note: Eject hole, oriented hole and mold mark is optional.
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BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
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particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
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Fax: +886-2-2656 2806
Tel: +886-2-2656 2808 Fax: +886-2-2656 2806
USA Office BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
30920 Huntwood Ave. Hayward,
Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +1-510-324-2788
Tel : +1-510-324-2988 Fax: +1-510-324-2788
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