Diodes AL8400, AL8400Q User Manual



Green

LINEAR LED DRIVER-CONTROLLER with 200mV

CURRENT SENSE VOLTAGE and AUTOMOTIVE GRADE

Description

The AL8400 is a 5-terminal adjustable Linear LED driver-controller offering excellent temperature stability and output handling capability. The AL8400 simplifies the design of linear and isolated LED drivers. With its low 200mV current sense FB pin, it controls the regulation of LED current with minimal power dissipation when compared to traditional linear LED drivers. This makes it ideal for medium to high current LED driving.

The AL8400 open-collector output can operate from 0.2V to 18V enabling it to drive external MOSFET and Bipolar transistors. This enables the MOSFET and Bipolar selection to be optimized for the chosen application. It also provides the capability to drive longer LED chains, by tapping V

from the chain, where the chain voltage may

CC

exceed 18V. It is available in the space saving low profile SOT353 package.

The AL8400Q is Automotive Grade and is AEC-Q100 Grade 1 qualified.

Applications

• Isolated Offline LED Lamps

• Linear LED Driver

• LED Signs

• Instrumentation Illumination

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Pin Assignments

Features

• Low Reference Voltage (VFB = 0.2V)

• -40 to +125°C Temperature Range

• 3% Reference Voltage Tolerance at +25°C

• Low Temperature Drift

• 0.2V to 18V Open-Collector Output

• High Power Supply Rejection:

 (> 45dB at 300kHz)

• AL8400QSE-7 Automotive Grade qualified to AEC-Q100 Grade 1

• SOT353: Available in “Green” Molding Compound (No Br, Sb)

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

AL8400 /AL8400Q

Typical Applications Circuit

GND

AL8400/ AL8400Q

Document number: DS35115 Rev. 4 - 2

Vcc

R

3 Vcc

C

D

OUT

B

5

AL8400

Q2

4

FB

C

L

R

GND

I

= V

LED

E1

12

REF/RSET

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SET

August 2012

AL8400 /AL8400Q

Pin Descriptions

Number

1 E1 Emitter Connection. Connect to GND. 2 GND Analog Ground. Ground return for reference and amplifier. Connect to E1. 3 VCC Supply Input. Connect a 0.47F ceramic capacitor close to the device from VCC to GND. 4 FB Feedback Input. Regulates to 200mV nominal. 5 OUT Output. Connect a capacitor close to device between OUT and GND. See the Applications Information section.

Name Function

Functional Block Diagram

Absolute Maximum Ratings (@T

Symbol Parameter Rating Unit

VCC Supply Voltage Relative to GND 20 V

V

OUT Voltage Relative to GND 20 V

OUT

VFB FB Voltage Relative to GND 20 V VE1 E1 Voltage Relative to GND -0.3 to+0.3 V

TJ Operating Junction Temperature -40 to 150 °C

TST Storage Temperature -55 to 150 °C

These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability.

= +25°C, unless otherwise specified.)

A

Figure 1 Block Diagram

Package Thermal Data

P

Package θ

SOT353 400°C/W 310mW

AL8400/ AL8400Q

Document number: DS35115 Rev. 4 - 2

JA

T

= +25°C, TJ = +150°C

A

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DIS

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A

AL8400 /AL8400Q

Recommended Operating Conditions (@T

= +25°C, unless otherwise specified.)

A

Symbol Parameter Min Max Units

VCC Supply Voltage Range 2.2 18

V

OUT Voltage Range 0.2 18

OUT

I

OUT Pin Current 0.3 15 mA

OUT

V

TA Operating Ambient Temperature Range -40 +125 °C

Electrical Characteristics (Note 4) (@T

= +25°C, VCC= 12V, V

A

OUT

= VFB, I

= 1mA, unless otherwise specified.)

OUT

Symbol Parameter Conditions Min Typ Max Units

T

VFB Feedback Voltage

FB

Feedback Pin Load Regulation I

LOAD

FB

Feedback Pin Line Regulation V

LINE

FB

Output Voltage Regulation

OVR

= 1 to 15mA

OUT

= 2.2V to 18V

CC

V

= 0.2V to 18V, I

OUT

(Ref. Figure 1)

IFB FB Input Bias Current VCC = 18V

ICC Supply Current V

I

OUT Leakage Current V

OUT(LK)

Z

Dynamic Output Impedance I

OUT

= 2.2V to 18V, I

CC

= 18V, V

CC

= 1 to 15mA, f < 1kHz

OUT

PSRR Power Supply Rejection Ratio f = 300kHz, V

=1mA

OUT

=10mA

OUT

= 18V, VFB =0V

OUT

= 0.3VPP T

C

= +25°C 0.194 0.2 0.206

TA = -40°C to +125°C 0.190 0.210

= +25°C 3.1 6

T TA = -40°C to +125°C 10 T

= +25°C 0.1 1.5

TA = -40°C to +125°C 2

= +25°C 2

T TA = -40°C to +125°C 3

= +25°C -45

T TA = -40°C to +125°C -200 0 T

= +25°C 0.48 1 TA = -40°C to +125°C 1.5 T

= +25°C 0.1 TA = +125°C 1 T

= +25°C 0.25 0.4 TA = -40°C to +125°C 0.6

V

mV

nA

mA

µA

Ω

= +25°C 45 dB

BW Amplifier Unity Gain Frequency TA = +25°C 600 kHz

G Amplifier Transconductance TA = +25°C 4500 mA/V

Note: 4. Production testing of the device is performed at +25°C. Functional operation of the device and parameters specified over the operating temperature range are guaranteed by design, characterization and process control.

Typical Characteristics

Load Regulation

AL8400/ AL8400Q

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Line Regulation

August 2012

Typical Characteristics (cont.)

AL8400 /AL8400Q

Supply Current with Input Voltage

Supply Current with Load Current

FB Voltage Change with Temperature

FB Input Current with Temperature

MOSFET Driving

AL8400/ AL8400Q

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Bipolar Transistor Driving

August 2012

AL8400 /AL8400Q

Application Information

Description

The AL8400 Linear LED driver controller uses an external pass element to drive the LEDs and uses its FB pin to sens e the LED current through an external resistor R NPN transistor or N-channel MOSFET. An external pull-up resistor, R supplies the output bias current of the AL8400 together with any current which the pass element requires.

In order to maintain the accuracy of the 200mV reference voltage on the FB pin the value of R

Stability

As with all ICs, for best stability a 0.1µF minimum (X7R ceramic) power supply decoupling capacitor, CD, connected between VCC and Ground (See Figure 2) is recommended. C

. The pass element is driven by the AL8400’s open collector OUT pin which allows the pass element to be either an

SET

, is required to be connected from the OUT pin to VCC. This resistor

B

should be set so that the OUT pin sinks 1mA.

B

should be placed as close to the VCC pin as possible < 5mm.

D

Figure 2 Application Circuit Using Bipolar Transistor

The AL8400 requires an output capacitor, C

in Figure 2, to be connected from the OUT pin to Ground. This capacitor is require d to compensate

L

the current control loop of the AL8400.

This compensation capacitor must be placed as close to the OUT pin as possible < 5mm. If the PCB traces are too long, there is the possibility of oscillation at about 5MHz. The capacitors C GND and V

. The limit of 5mm provides a good margin for stability.

CC

and CL must be mounted immediately adjacent to the AL8400, with direct connections to OUT, E1,

D

The value of capacitor C

is determined from the value of the pull-up resistor RB so that:

L

C

x RB ≥ 2ms

L

For example if R

= 1kΩ, then CL must be 2µF or greater. The recommended capacitor type is X7R ceramic.

B

200

V

= 0.6V

V

= 0.6V

V

= 0.6V

OUT

C

= 2.2uF

OUT

= 1k

R

150

100

Ga in ( dB)

50

0

Gain

Gain Phase

Phase

-50

-50 1 10 100 1k 10k 100k 1M

1 10 100 1k 10k 100k 1M

Frequency (Hz)

B

= 2.2µF

C

L

225

180

135

90

45

0

Figure 3 Gain and Phase vs. Frequency with RB = 1kΩ and CL = 2.2µF

Phase (deg)

AL8400/ AL8400Q

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AL8400 /AL8400Q

Application Information (cont.)

Bipolar Transistor as the Pass Element

For driving currents in the region of about 50mA to about 400mA, the recommended NPN is DNLS320E in the S OT223 package. The hi gh DC current gain of the DNLS320E is useful in this application, in order to minimize the current in R Figure 4.

. The design procedure is as follows, referring to

B

Figure 4 Application Circuit Using Bipolar Transistor

There are two important equations for the circuit:

LED Circuit Path:

1. V

The maximum total LED voltage plus the reference voltage determines the minimum supply voltage. Substituting into equation 1 yields:

CC

= (V

+ VCE + VFB) where VFB is approximately the internal reference voltage of 200mV.

LED

VVVV ++= where V

FBCEsatmaxLEDminCC

is the maximum LED chain voltage.

LEDmax

Control Drive Circuit Path

2. VCC = (VRB + VBE + VFB) For a bipolar transistor the voltage (V

rearranging equation 2 yields the boundaries for allowable R

3.

R

=

maxB

where I

where h The value of R

is the maximum transistor base current

Bmax

I

LED

I =

maxB

is the minimum DC current gain of the transistor.

FEmin

should be set somewhere between R

B

h

minFE

) across bias resistor RB consists of the base current of Q2 and the output current of the AL8400. So

RB

values:

B

VVV

−−

FBmaxBEminCC

II

+

maxBminOUT

Bmax

and R

Bmin

4.

where I

where h

R

=

minB

is the minimum transistor base current

Bmin

I

I =

minB

is the maximum DC current gain of the transistor.

FEmax

LED

h

maxFE

with the target of trying to get I

of the AL8400 close to 1mA for nominal

OUT

VVV

−−

FBminBEmaxCC

II

+

minBmaxOUT

conditions. Once R

has been determined the value for compensation capacitor, CL, should be calculated.

B

ms2

C ≈

L

R

B

Finally, the bipolar selection is also influenced by the maximum power dissipation

= I

P

TOT

x (VCC – V

LED

– V

REF

) = I

LED

x V

CE

Since this determines the package choice (θJA) in order to keep the junction temperature below the maximum value allowed.

= TA + P

T

J

TOT

x θJA

where

is the maximum operating junction temperature,

T

J(MAX)

is the ambient temperature,

T

A

is the junction to ambient thermal resistance.

θ

JA

AL8400/ AL8400Q

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AL8400 /AL8400Q

Application Information (cont.)

Bipolar Example – Choosing RB and CL

The driver is required to control 3 series connected LEDs at 150mA ±10% from a 12V ±5% supply. Each LED has a for ward voltage of 3V minimum and of 3.6V maximum.

From this information the minimum supply voltage is 11.4V and the maximum LED chain voltage is 10.8V. Rearranging equation 1 (page 7); the minimum voltage drop across the bipolar transistor is determined to be:

V4.0V2.0V8.10V4.11VVVV

FBmaxLEDminCCCE

We will use the DNLS320E bipolar transistor (Q2.)

R

Bmax

The DNLS320E datasheet table states:

V

CE(SAT)max =

h

The datasheet graph (see left) shows a very slow variation at 100mA, so a value of 500 is considered appropriate.

Then

FEmin

I

=

maxB

0.1V at IC = 100mA, IB = 0.5mA

= 500 @ IC = 100mA, VCE = 2V;

mA150

= 0.3mA

500

=−−=−−=

The minimum recommended I approximately 0.8V at -55°C.

From these and equation 3, the maximum allowed bias resistor value is:

=

R

maxB

=

Figure 5 DNLS320E H

AL8400/ AL8400Q

Document number: DS35115 Rev. 4 - 2

for AL8400 is 0.3mA and the maximum VBE, according to the DNLS320E datasheet graph (Figure 6), is

OUT

−−

VVV

FBmaxBEminCC

=

vs. I

C

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+

II

maxBminOUT

2.08.04.11

−−

= 17.3k

0003.00003.0

+

FE

Figure 6 DNLS320E V

vs. IC

BE

August 2012

Application Information (cont.)

Bipolar Example – Choosing RB and CL (cont.) R

Bmin

To ensure that the output capability of the AL8400 is not exceeded at maximum V substituted back into the R

is about 1200 @ IC = 100mA, and a temperature of +85°C (Figure 5) which results in:

h

FEmax

=

I

minB

equation to determine the minimum allowable value for RB.

B

150

= 0.125mA

1200

AL8400 /AL8400Q

, maximum hFE and minimum VBE, these values should be

IN

The maximum recommended I approximately 0.4V at 85°C and assuming V

R

=

minB

=

for AL8400 is 15mA.The minimum VBE, according to the DNLS320E datasheet graph (Figure 6), is

OUT

= 12.6V, then from equation 4 the bias resistor value is:

CCmax

VVV

−−

FBminBEmaxCC

II

+

minBmaxOUT

2.04.04.8

−−

000125.0015.0

+

=

= 516 this is less than 17k and so the AL8400 output current is within its ratings.

CL

Choosing RB = 11k satisfies the requirements for the AL8400 conformance and sets approximately 1mA in the OUT pin. The required compensation capacitor can therefore be calculated from:

C

The value of R

R

SET

ms2

≈

L

k11

Ω

is V

SET

REF/ILED

= 0.2/0.15 = 1.333 Î Choosing two 2.7 yields 1.35 giving an approximate 1.3% difference from target.

so:

Æ 180nF

F18.0

μ≈

Finally, the maximum power dissipation of the external bipolar transistor is:

P

= I

TOT

= I

LED

x V

x (V

CEMAX

CC_max

– V

– VFB) = 0.51W

LED_MIN

This determines the package choice (θJA) in order to keep the junction temperature of the bipolar transistor below the maximum value allowed. At a maximum ambient temperature of +60°C the junction temperature becomes

= TA + P

T

J

TOT

x θJA

= 60 + 0.51 x 125 = +123.75°C

N-Channel MOSFET as the Pass Element

Alternatively, an N-channel MOSFET may be used in the same configuration. The current in RB is then reduced compared to the case in which the bipolar transistor is used. For LED currents up to about 400mA a suitable MOSFET is DMN6068SE in the SOT223 package. The design procedure is as follows, referring to Figure 7.

AL8400/ AL8400Q

Document number: DS35115 Rev. 4 - 2

Figure 7 Application Circuit Using MOSFET

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−−=

AL8400 /AL8400Q

Application Information (cont.)

N-Channel MOSFET as the Pass Element (cont.)

The equations (1 and 2) for the bipolar transistor are transformed into: LED circuit path:

5. V

Control drive circuit path

6. V

The maximum total LED voltage plus the reference voltage determines the minimum supply voltage. Substituting into equation 5 yields:

The MOSFET DC gate current is negligible, so the bias resistor R rearranging equation 6 yields the boundaries for allowable R

7.

Where I

Once the value of R compensation capacitor, C

The MOSFET selection is also influenced by the maximum power dissipation

P

TOT

Since this determines the package choice (θJA) in order to keep the junction temperature below the maximum value allowed.

T

J

where

T

J(MAX)

is the ambient temperature,

T

A

is the junction to ambient thermal resistance.

θ

JA

Low Supply Voltages and MOSFET as Pass Element

When driving a single LED at low supply voltages, a low threshold MOSFET or high gain NPN bipolar transistor should be used as the LED driving pass transistor.

This is because a standard threshold voltage MOSFET might not have enough Gate-Source voltage to ensure that it is sufficiently enhanced to regulate the LED current.

MOSFET Example Choosing RB and CL

The driver is required to control 3 series connected LEDs at 200mA ±10% from an 12V ±5% sup ply. Each LED has a forward voltage of 3V minimum and of 3.6V maximum.

Therefore the minimum supply voltage is 11.4V and the maximum LED chain voltage is 10.8V. Rearranging equation 5 (page 9); the minimum voltage drop across the MOSFET is required to be:

We will use the DMN6068SE N-channel MOSFET (Q2) with a maximum R

AL8400/ AL8400Q

Document number: DS35115 Rev. 4 - 2

= (V

CC

R

minB

OUTmax

= I

LED

= TA + P

+ VDS + VFB) where VFB is approximately the internal reference voltage of 200mV.

LED

= (VRB + VGS + VFB)

VVVV ++=

FBDSMINLEDminCC

values:

B

VVV

−−

=

I

maxOUT

FBminGSmaxCC

8.

is the AL8400 maximum output current Where I

has been determined, somewhere between R

B

, should be calculated.

L

* (VCC – V

• θ

TOT

JA

– VFB) = I

LED

* V

DS

Bmax

is the maximum operating junction temperature,

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has only to provide the minimum output current of the AL8400. So

B

VVV

−−

FBmaxGSminCC

August 2012

and R

DS(ON)

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R

– trying to get I

Bmin

=

maxB

is the AL8400 minimum output current

OUTmin

close to 1mA for all variations, the value for

OUT

=−−=×

VVVRI

FBmaxLEDminCCDSLED

V2.0V8.10V4.11

= 0.4V Æ R

of 100m at VGS = 4.5V.

DS(ON)

I

 2

minOUT

Application Information (cont.)

MOSFET Example Choosing RB and CL (cont.) R

Bmax

The minimum recommended I The maximum V

is not stated explicitly, but from the datasheet graphs (Figures 8 and 9) it is expected to be approximately 3.8V at -50°C.

GS

R

=

maxB

=

To ensure that the output capability of the AL8400 is not exceeded at maximum V into the R

equation to determine the minimum allowable value for RB.

B

R

Bmin

The maximum recommended I

R

=

minB

= this is less than 12k and so the AL8400 output current is within its ratings.

for AL8400 is 0.3mA.

OUT

VVV

−−

FBmaxGSminCC

=

VVV

FBminGSmaxCC

24.7k

=

I

minOUT

−−

V2.0V8.3V4.11

mA3.0

for the AL8400 is 15mA. The minimum VGS is about 1V and assuming V

OUT

−−

I

maxOUT

V2.0V1V6.12 −−

mA15

= 480

AL8400 /AL8400Q

and minimum VGS these values should be substituted back

IN

= 8.4V:

CCmax

Figure 8 Typical Transfer Characteristics

Assuming V

~ 3V and choosing an RB = 8.2k satisfies the requirements for the AL8400 conformance and sets approximately 1mA in the OUT

GS

pin. The required compensation capacitor can therefore be calculated from:

C

L

The value of R

≈

SET

ms2

is V

k2.8

Ω

REF/ILED

Æ 220nF

F243.0

μ≈

R

= 0.2/0.2 = 1

SET

Finally, the maximum power dissipation of the external MOSFET is:

P

= I

TOT

= 0.2 x( 12.6 – 9 -0.2) = 0.68W

= I

LED

x V

x (V

DSMAX

CCmax

– V

LEDMIN

– VFB)

This determines the package choice (θ

= TA + P

T

J

TOT

x θJA

) in order to keep the junction temperature below the maximum value allowed.

JA

= 60 + 0.68 x 62.5 = +102.5˚C

AL8400/ AL8400Q

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Figure 9 Normalised Curves and Temperature

August 2012

v

AL8400 /AL8400Q

Application Information (cont.)

High Voltage Operation

The AL8400 also provides the capability to drive longer LED chains as the voltage across the LED chain is determined by the external switch. The lower supply voltage for the AL8400 can be derived from the supply to the LE D chain either by putting a series r esistor to the AL8400’s V pin and putting a suitable zener diode from its V

to GND Figure 10 or by tapping its VCC from the LED chain Figure 11.

CC

Figure 10 High Voltage Operation with Zener Diode from VIN

Equations 1 and 2 (from page 7) now transform into:

LED Circuit Path:

1. V

IN

= (V

+ VCE + VFB)

LED

Control Dri

e Circuit Path

2. V

= (VRB + VBE + VFB)

CC

When the supply voltage for the AL8400 is derived using a zener diode, care has to be taken in dimensioning the resistor R1. The current taken through R1 from V

has to be large enough to polarize the zener, bias the AL8400 supply current, A L8400 output current and the pas s transistor

IN

across all input voltage variations.

An alternative way of operating the AL8400 from rails greater than 18V is to take its power supply from the LED chain itself.

Figure 11 High Voltage Operation Tapping VCC from the LED String

When the supply voltage for the AL8400 is derived from the LED string, care has to be taken in dimensioning the resistor R from the LED chain can reduce the accuracy of the system and brightness matching between the LED.

AL8400/ AL8400Q

Document number: DS35115 Rev. 4 - 2

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. The current spilled

B

August 2012

Ordering Information

AL8400 /AL8400Q

Part Number Package Code Packaging

AL8400QSE-7 SE SOT353 3000/Tape & Reel -7 Y (Note 5)

AL8400SE-7 SE SOT353 3000/Tape & Reel -7 -

Note: 5. Qualified to AEC-Q100 Grade 1.

Quantity Part Number Suffix

7” Tape and Reel

Automotive Grade

Marking Information

(1) SOT353

( Top View )

W

7

4

XX

: Identification code

Y

: Year 0~9

X

W

: Week : A~Z : 1~26 week;

a~z : 27~52 week; z represents 52 and 53 week

: A~Z : Green

X

5

XX

Y

1 2 3

Part Number Package Identification Code

AL8400SE-7 SOT353 B4

AL8400QSE-7 SOT353 B4

Package Outline Dimensions (All dimensions in mm.)

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

B C

H

K

J

D

M

L

F

SOT353

Dim Min Max

A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40

M 0.10 0.22

α

All Dimensions in mm

0° 8°

AL8400/ AL8400Q

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AL8400 /AL8400Q

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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G

Z

Y

X

C2C2

Dimensions Value (in mm)

Z 2.5

G 1.3

C1

IMPORTANT NOTICE

LIFE SUPPORT

X 0.42

Y 0.6 C1 1.9 C2 0.65

AL8400/ AL8400Q

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Diodes AL8400, AL8400Q User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual