Diodes AL5802 User Manual

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L5802
Description
The AL5802 combines a high gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver.
The LED current is set by an external resistor connected from REXT pin (6) to GND pin (4), the internal high gain transistor develops approximately 0.6V across the external resistor.
The AL5802 open-collector output can operate from 0.8V to 30V enabling it to operate from 5V to 24V power supplies without additional components.
PWM dimming of the LED current can be achieved by either driving
the BIAS pin (2) with a low impedance voltage source, or driving the EN pin (3) with an external open-collector NPN transistor or open­drain N-channel MOSFET.
The AL5802 is available in a SOT26 package and is ideal for driving 20mA to 120mA LED currents.
Features
ADVANCE INFORMATION
Reference voltage VRSET = 0.65V
-40 to +125°C temperature range
0.8V to 30V open-collector output
Negative temperature co-efficient – automatically reduces the
LED current at high temperatures
Low thermal impedance SOT26 with copper leadframe
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
Pin Assignments
(Top View)
654
Q1
Q2
123
SOT26
Applications
Linear LED driver
LED signs
Offline LED luminaries
Typical Application Circuit
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
AL5802
Document number: DS35516 Rev. 9 - 2
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Pin Descriptions
Pin Number Name Function
1 OUT Open-collector LED driver output 2 BIAS Biases the open collector output transistor 3 EN Enable pin for PWM dimming. Provides access to the base of Q2 and collector of Q1 4 GND Ground reference point for setting LED current
5 FB
6 REXT Current sense pin. LED current sensing resistor should be connected from here to GND.
Functional Block Diagram
ADVANCE INFORMATION
L5802
Feedback pin. Should be connected to pin 6.
Fig. 1 Block Diagram
Absolute Maximum Ratings
Symbol Characteristics Values Unit
V
OUT
V
BIAS
V
FB
V
EN
V
REXT
I
OUT
T
J
T
ST
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability.
Note: 4. With pins 5 and 6 connected together.
AL5802
Document number: DS35516 Rev. 9 - 2
Output voltage relative to GND BIAS voltage relative to GND (Note 4) LED voltage relative to GND EN voltage relative to GND REXT voltage relative to GND Output current Operating junction temperature Storage temperature
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30 V 30 V
6 V 6 V 6 V
150 mA
-40 to +150 °C
-55 to +150 °C
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© Diodes Incorporated
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(BR)
(BR)
)
)
(BR)
(BR)
(BR)
)
L5802
Package Thermal Data
Characteristic Symbol Value Unit
Power Dissipation (Note 5) @ TA = +25°C Power Dissipation (Note 6) @ T Power Dissipation (Note 7) @ T
= +25°C
A
= +25°C
A
P
D
Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = +25°C Thermal Resistance, Junction to Ambient Air (Note 6) @ T Thermal Resistance, Junction to Ambient Air (Note 7) @ T
Notes: 5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
6. Device mounted on 25mm x 25mm 2oz copper board.
7. Device mounted on 50mm x 50mm 2oz copper board.
= +25°C
A
= +25°C
A
R
θJA
0.37
0.87 1
335 143 120
W
°C/W
Recommended Operating Conditions
Symbol Parameter Min Max Unit
V
BIAS
V
ADVANCE INFORMATION
I
OUT
LED
TA
Note: 8. Subject to ambient temperature, power dissipation and PCB.
Electrical Characteristics – NPN Transistor – Q1 (@T
Symbol Characteristic Test Condition Min Typ Max Unit
V V
I
V
CE(SAT
V
BE(SAT
CEX
IBL
hFE
Collector-Emitter Breakdown Voltage (Note 9)
CEO
Emitter-Base Breakdown Voltage
EBO
Collector Cutoff Current Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage (Note 9) Base-Emitter Saturation Voltage
Electrical Characteristics – NPN Pre-biased Transistor – Q2 (@T
Symbol Characteristic Test Condition Min Typ Max Unit
V V V
I
CBO
I
EBO
V
CE(SAT
hFE
R1
*Characteristics of transistor only.
Note: 9. Short duration pulse test used to minimize self-heating effect.
AL5802
Document number: DS35516 Rev. 9 - 2
Collector-Base Breakdown Voltage
CBO
Collector-Emitter Breakdown Voltage (Note 9)
CEO
Emitter-Base Breakdown Voltage
EBO
Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage (Note 9) DC Current Gain (Note 9) Input Resistance 7 10 13 k
Supply voltage range 4.5 30 OUT voltage range 0.8 30
V
LED pin current (Note 8) 10 120 mA Operating ambient temperature range -40 +125 °C
= +25°C, unless otherwise specified.)
A
IC = 1.0mA, IB = 0 IE = 10µA, IC = 0 VCE = 30V, V VCE = 30V, V
= 100µA, VCE = 1.0V
I
C
= 1.0mA, VCE = 1.0V
I
C
I
= 10mA, VCE = 1.0V
C
IC = 10mA, IB = 1.0mA IC = 10mA, IB = 1.0mA
IC = 50μA, IE = 0 IC = 1mA, IB = 0 IE = 50μA, IC = 0 VCB = 30V, IE = 0 V
= 4V, IC = 0
EB
IC = 10mA, IB = 1mA VCE = 5V, IC = 150mA
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EB(OFF)
EB(OFF)
= 3.0V = 3.0V
= +25°C, unless otherwise specified.)
A
40 — — V
6.0 — — V — — 50 nA — — 50 nA
40 70
100
— — —
— —
300
— — 0.20 V
0.65 — 0.85 V
30 — — V 30 — — V
5.0 — — V
— — 0.5 µA — — 0.5 µA — — 0.3 V
100 — — —
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© Diodes Incorporated
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Thermal Characteristics
ADVANCE INFORMATION
AMBIENT TEMPERAURE (°C)
Fig. 2 Derating Curve
L5802
Fig. 3 Max Power vs. Area
Fig. 4 Thermal Resistance vs. Area
AL5802
Document number: DS35516 Rev. 9 - 2
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Typical Performance Characteristics
L5802
Fig. 5 Output Current vs. V
Fig. 6 Output Current vs. R
out
EXT
ADVANCE INFORMATION
Fig. 7 Output Current vs. V
out
Fig. 8 Output Current vs. V
out
Fig. 9 Output Current vs. V
Note: 10. V
in the “Output current Vs V
out
AL5802
Document number: DS35516 Rev. 9 - 2
Fig. 10 Output Current vs. V
out
” graphs limited by power dissipation in the device.
out
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bias
© Diodes Incorporated
March 2014
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L5802
ADVANCE INFORMATION
AL5802
Document number: DS35516 Rev. 9 - 2
Fig. 11 Output Current vs. V
Fig. 13 Output Current vs. V
bias
bias
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Fig. 12 Output Current vs. V
bias
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Application Information
ADVANCE INFORMATION
Fig. 14 Typical Application Circuit for
Linear Mode Current Sink LED Driver
L5802
The AL5802 has been designed for driving low current LEDs with typical LED current of 20mA to 100mA. It provides a cost effective way for driving low current LEDs compared with more complex switching regulator solutions. Furthermore, it reduces the PCB board area of the solution as there is no need for external components like inductors, capacitors and switching diodes.
Figure 14 shows a typical application circuit diagram for driving an LED or string of LEDs. The NPN transistor Q1 measures the LED current by sensing the voltage across an external resistor R reference to set the voltage across R
and controls the base current
EXT
into Q2. Q2 operates in linear mode to regulate the LED current. The LED current is
= V
I
LED
BE(Q1)
/ R
EXT
From this, for any required LED current the necessary external resistor
can be calculated from
R
EXT
= V
R
EXT
BE(Q1)
/ I
LED
Two or more AL5802 can be connected in parallel to construct higher current LED strings as shown in Figure 15.
Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the AL5802's thermal resistance. The maximum voltage across the device can be calculated by taking the maximum supply voltage less the voltage across the LED string.
V P
CE(Q2)
= V
D
= VCC – V
* I
CE(Q2)
LED
+ ( VCC – V
LED
– V
BE(Q1)
BE(Q2)
– V
BE(Q1)
As the output current of AL5802 increases, it is necessary to provide appropriate thermal relief to the device. The power dissipation supported by the device is dependent upon the PCB board material, the copper area and the ambient temperature. The maximum dissipation the device can handle is given by:
P
= ( T
D
J(MAX)
- TA) /R
θJA
Refer to the thermal characteristic graphs on page 4 for selecting the appropriate PCB copper area.
. Q1 uses its VBE as
EXT
)2 / R1
Fig. 15 Application Circuit for Increasing LED Current
AL5802
Document number: DS35516 Rev. 9 - 2
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PWM dimming can be achieved by driving the EN pin. An external open-collector NPN transistor or open-drain N-channel MOSFET can be used to drive the EN pin as shown in Figure 16. Dimming is achieved by turning the LEDs ON and OFF for a portion of a single cycle. The PWM signal can be provided by a micro-controller or analog circuitry. Figure 17 is a typical response of LED current vs. PWM duty cycle on the EN pin.
-or-
ADVANCE INFORMATION
L5802
AL5802
Document number: DS35516 Rev. 9 - 2
Fig. 16 Application Circuits for LED Driver with PWM Dimming Functionality
60
50
40
30
20
LED CURRENT (mA)
10
0
Fig. 17 Typical LED current response vs. PWM duty cycle for
200
PWM DUTY CYCLE (%)
= 13 at 400Hz PWM frequency
R
EXT
40 60 80 100
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A
ADVANCE INFORMATION
L5802
SDM10U45LP
V
S
L5802
R
S
Fig. 18 Application circuit for LED driver
with reverse polarity protection
V
S
BAS40BRW
L5802
To remove the potential of incorrect connection of the power supply damaging the lamp’s LEDs, many systems use some form of reverse polarity protection.
One solution for reverse input polarity protection is to simply use a diode with a low V
increases the available voltage to the LED stack and dissipates
V
F
less power. A circuit example is presented in Fig. 18 using Diodes Inc. SBR® (Super Barrier Rectifier) technology. An SDM10U45LP (0.1A/45V) is shown, providing exceptionally low V size of 1mm x 0.6mm, equivalent to an 0402 chip style package. Other reverse voltage ratings are also available in Diodes’ website such as the SBR02U100LP (0.2A/100V) or SBR0220LP (0.2A/20V).
Automotive applications commonly use this method for reverse battery protection.
A second approach, shown in Fig. 19, improves upon the method shown in Fig. 18. Whereas the method in Fig. 18 protects the light engine, it will not function until the problem has been diagnosed and corrected.
The method shown in Fig. 19 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to function.
The BAS40BRW incorporates four low V single package and allows more voltage available for the LED stack and dissipates less power that standard rectifier bridges.
in-line with the driver/LED combination. The low
F
for its package
F
, Schottky diodes into a
F
Fig. 19 Application circuit for LED driver with
assured operation regardless of polarity
AL5802
Document number: DS35516 Rev. 9 - 2
R
S
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Ordering Information (Note 11)
Device Qualification Packaging
AL5802 Commercial SOT26 3,000/Tape & Reel -7 AL5802 Commercial SOT26 10,000/Tape & Reel -13
Note: 11. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
L102 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September)
ADVANCE INFORMATION
L102
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017 2018 2019
Code Y Z A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
YM
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
K
J
A
B C
H
M
D
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G
Z
C2
C2
C1
AL5802
Document number: DS35516 Rev. 9 - 2
Y
X
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Quantity Part Number Suffix
Tape and Reel
Dim Min Max Typ
Dimensions Value (in mm)
Z 3.20 G 1.60 X 0.55 Y 0.80
C1 2.40 C2 0.95
SOT26
A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D
 
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°

All Dimensions in mm
0.95

L5802
March 2014
© Diodes Incorporated
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ADVANCE INFORMATION
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
L5802
AL5802
Document number: DS35516 Rev. 9 - 2
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