Diodes 74LVCE1G00 User Manual

74LVCE1G00

A

A

SINGLE 2 INPUT POSITIVE NAND GATE

Description

Pin Assignments

The 74LVCE1G00 is a single 2-input positive NAND gate
with a standard totem pole output. The device is designed
for operation with a power supply range of 1.4V to 5.5V.
The inputs are tolerant to 5.5V allowing this device to be
used in a mixed voltage environment. The device is fully
specified for partial power down applications using I
I

circuitry disables the output preventing damaging

OFF

current backflow when the device is powered down.
The gate performs the positive Boolean function:

OFF

. The

A

B

GND

Y •=

B

or B

Y +=

Features

NEW PRODUCT

• Extended Supply Voltage Range from 1.4 to 5.5V

• Switching speed characterized for operation at 1.5V

• Offers 30% speed improvement over LVC at 1.8V.

• ± 24mA Output Drive at 3.3V

• CMOS low power consumption

• IOFF Supports Partial-Power-Down Mode Operation

• Inputs accept up to 5.5V

• ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)

• Latch-Up Exceeds 100mA per JESD 78, Class II

• Range of Package Options

• Direct Interface with TTL Levels

• SOT25, SOT353, and DFN1410: Assembled with “Green”

Molding Compound (no Br, Sb)

• Lead Free Finish/ RoHS Compliant (Note 1)

Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at

74LVCE1G00

Document number: DS32210 Rev. 2 - 2

http://www.diodes.com/products/lead_free.html.

2. Pin 2 and pin 5 of the DFN1410 package are internally connected.

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Applications

• Voltage Level Shifting

• General Purpose Logic

• Wide array of products such as.

o PCs, networking, notebooks, netbooks, PDAs
o Computer peripherals, hard drives, CD/DVD ROM
o TV, DVD, DVR, set top box
o Cell Phones, Personal Navigation / GPS
o MP3 players ,Cameras, Video Recorders

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GND

(Top View)

1

2

SOT25 / SOT353

(Top View)

1

A

2

B

3

DFN1410 (Note 2)

Vcc

5

43

Y

6

Vcc

5

NC

4

Y

December 2010

© Diodes Incorporated

Pin Descriptions

Pin Name Description

A
B

GND

Y

Vcc

Logic Diagram

NEW PRODUCT

Function Table

A
B

Data Input
Data Input
Ground
Data Output
Supply Voltage

1

2

74LVCE1G00

SINGLE 2 INPUT POSITIVE NAND GATE

4

Y

Inputs Output

A

H

L

X

B

H
X

L

Y

L
H
H

74LVCE1G00

Document number: DS32210 Rev. 2 - 2

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74LVCE1G00

SINGLE 2 INPUT POSITIVE NAND GATE

Absolute Maximum Ratings (Note 3)

Symbol Description Rating Unit

ESD HBM Human Body Model ESD Protection 2 KV

ESD MM Machine Model ESD Protection 200 V

VCC Supply Voltage Range -0.5 to 6.5 V

VI Input Voltage Range -0.5 to 6.5 V
Vo Voltage applied to output in high impedance or I
Vo Voltage applied to output in high or low state -0.3 to VCC +0.5 V
IIK Input Clamp Current VI<0 -50 mA

IOK Output Clamp Current -50 mA

IO Continuous output current ±50 mA

Continuous current through Vdd or GND ±100 mA

TJ Operating Junction Temperature -40 to 150 °C

NEW PRODUCT

T

Storage Temperature -65 to 150 °C

STG

Note: 3. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device

operation should be within recommend values.

state -0.5 to 6.5 V

OFF

74LVCE1G00

Document number: DS32210 Rev. 2 - 2

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Recommended Operating Conditions (Note 4)

Symbol Parameter Min Max Unit

VCC Operating Voltage

V

High-level Input Voltage

IH

VIL Low-level input voltage

VI Input Voltage 0 5.5 V

VO Output Voltage 0 VCC V

NEW PRODUCT

IOH High-level output current

IOL Low-level output current

Δt/ΔV

TA

Note: 4. Unused inputs should be held at Vcc or Ground.

Input transition rise or fall
rate

Operating free-air
temperature

Operating 1.4 5.5 V
Data retention only 1.2 V
V

= 1.4 V to 1.95 V 0.65 X VCC

CC

VCC = 2.3 V to 2.7 V 1.7
VCC = 3 V to 3.6 V 2
VCC = 4.5 V to 5.5 V 0.7 X VCC
V

= 1.4 V to 1.95 V 0.35 X VCC

CC

VCC = 2.3 V to 2.7 V 0.7
VCC = 3 V to 3.6 V 0.8
VCC = 4.5 V to 5.5 V 0.3 X VCC

Vcc=1.4 V -3
VCC = 1.65 V -4
VCC = 2.3 V -8

VCC = 3 V
VCC = 4.5 V -32

Vcc=1.4 V 3
VCC = 1.65 V 4
VCC = 2.3 V 8

VCC = 3 V
VCC = 4.5 V 32

V

= 1.4 to 3V

CC

VCC = 3.3 V ± 0.3 V 10
VCC = 5 V ± 0.5 V 5

74LVCE1G00

SINGLE 2 INPUT POSITIVE NAND GATE

-16

-24

16
24

20

-40 85 ºC

V

V

mA

mA

ns/V

74LVCE1G00

Document number: DS32210 Rev. 2 - 2

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74LVCE1G00

SINGLE 2 INPUT POSITIVE NAND GATE

Electrical Characteristics (All typical values are at Vcc = 3.3V, T

Over recommended free-air temperature range (unless otherwi se noted)

Symbol Parameter Test Conditions Vcc Min Typ. Max Unit

= 25°C)

A

= -100μA 1.4 V to 5.5V V

I

OH

– 0.1

CC

IOH = -3mA 1.4 V 1.05
IOH = -4mA 1.65 V 1.2

VOH

High Level Output
Voltage

IOH = -8mA 2.3V 1.9
IOH = -16mA
IOH = -24mA 2.3

3 V

2.4

IOH = -32mA 4.5 V 3.8

= 100μA 1.4 V to 5.5V 0.1

I

OL

IOL = 3mA 1.4 V .4
IOL = 4mA 1.65 V 0.45

VOL High-level Input Voltage

NEW PRODUCT

IOL = 8mA 2.3V 0.3
IOL = 16mA
IOL = 24mA 0.55

3 V

0.4

IOL = 32mA 4.5 0.55

II Input Current VI = 5.5 V or GND 0 to 5.5 V ± 5 μA

I

OFF

Power Down Leakage
Current

ICC Supply Current

ΔICC

Additional Supply
Current

Ci Input Capacitance Vi = V

V

or VO = 5.5V

I

V

= 5.5V of GND

I

=0

I

O

One input at V

CC

–

0.6 V Other inputs
at V

or GND

CC

– or GND 3.3 3.5 pF

CC

0 ± 10 μA

1.4 V to 5.5V

3 V to 5.5V

SOT25 (Note 5) 204

θ

Thermal Resistance

JA

Junction-to-Ambient

SOT353

(Note 5)

371
DFN1410 (Note 5) 430
SOT25 (Note 5) 52

θ

Note: 5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum

Thermal Resistance

JC

Junction-to-Case

recommended pad layout.

SOT353 (Note 5) 143
DFN1410

(Note 5)

190

V

V

10 μA

500 μA

o

C/W

o

C/W

74LVCE1G00

Document number: DS32210 Rev. 2 - 2

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December 2010

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