Description
The 74LVC1G57 is a single 3-input positive configurable multiple
function gate with a standard push-pull output. The output state is
determined by eight patterns of 3-bit input. The user can chose the
logic functions AND, OR, NAND, NOR, XNOR, inverter or noninverting buffer. All inputs can be connected to ground or Vcc as
required. The device is designed for operation with a power supply
range of 1.65V to 5.5V. The inputs are tolerant to 5.5V allowing this
device to be used in a mixed voltage environment. The device is fully
specified for partial power down applications using IOFF. The IOFF
circuitry disables the output preventing damaging current backflow
when the device is powered down. The user is reminded that the
device can simulate several types of logic gates but may respond
differently due to the Schmitt action at the inputs.
NEW PRODUCT
Features
74LVC1G57
CONFIGURABLE MULTIPLE-FUNCTION GATE
Pin Assignments
(Top View)
1
I1N
2
GND
3
I0N
SOT26
(Top View)
IN1
1
GND
2
3
IN0
X2-DFN1410-6
Applications
6
I2N
CC
GND
5
V
4
Y
I2N
6
V
5
CC
4
Y
(Top View)
1
IN1
2
3
IN0
SOT363
(Top View)
1
IN1
2
GND
3
IN0
X2-DFN1010-6
6
IN2
5
V
CC
4
Y
6
IN2
5
V
CC
4
Y
• Wide Supply Voltage Range from 1.65V to 5.5V
• ± 24mA Output Drive at 3.3V
• CMOS low power consumption
• IOFF Supports Partial-Power-Down Mode Operation
• Inputs accept up to 5.5V
• ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)
• Latch-Up Exceeds 100mA per JESD 78, Class II
• Range of Package Options
• SOT26, SOT363, X2-DFN1410-6, and X2-DFN1010-6: Available
in “Green” Molding Compound (no Br, Sb)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more info rmation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
74LVC1G57
Document number: DS35125 Rev. 4 - 2
www.diodes.com
• Voltage Level Shifting
• General Purpose Logic
• Power Down Signal Isolation
• Wide array of products such as:
PCs, networking, notebooks, netbooks, PDAs
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
Cell Phones, Personal Navigation / GPS
MP3 players ,Cameras, Video Recorders
1 of 15
June 2012
© Diodes Incorporated
Pin Descriptions
Pin Name Function
IN1 Data Input
GND Ground
IN0 Data Input
VCC
IN2 Data Input
Logic Diagram
NEW PRODUCT
74LVC1G57
CONFIGURABLE MULTIPLE-FUNCTION GATE
Y Data Output
Supply Voltage
Function Table
Inputs Output
IN2 IN1 IN0 Y
L L L H
L L H L
L H L H
L H H L
H L L L
H L H L
H H L H
H H H H
74LVC1G57
Document number: DS35125 Rev. 4 - 2
2 of 15
www.diodes.com
June 2012
© Diodes Incorporated
Logic Configurations
74LVC1G57
CONFIGURABLE MULTIPLE-FUNCTION GATE
NEW PRODUCT
74LVC1G57
Document number: DS35125 Rev. 4 - 2
Function Selection Table
Logic Function Configuration
2-input AND 1
2-input AND with both inputs inverted 4
2-input NAND with inverted input 2, 3
2-input OR with inverted input 2, 3
2-input NOR 4
2-input NOR with both inputs inverted 1
2-input XNOR 5
1-input INVERTER 6
3 of 15
www.diodes.com
June 2012
© Diodes Incorporated
CONFIGURABLE MULTIPLE-FUNCTION GATE
Absolute Maximum Ratings (Note 4)
Symbol Description Rating Unit
ESD HBM Human Body Model ESD Protection 2 KV
ESD MM Machine Model ESD Protection 200 V
VCC
VI
VO Voltage applied to output in high impedance or I
VO
IIK Input Clamp Current VI<0
IOK
IO
Continuous current through Vdd or GND ±100 mA
TJ
T
STG
Notes: 4. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
NEW PRODUCT
Supply Voltage Range -0.5 to +6.5 V
Input Voltage Range -0.5 to +6.5 V
state
OFF
Voltage applied to output in high or low state
Output Clamp Current -50 mA
Continuous output current ±50 mA
Operating Junction Temperature -40 to +150 °C
Storage Temperature -65 to +150 °C
-0.3 to VCC +0.5
Recommended Operating Conditions (Note 5)
Symbol Parameter Min Max Unit
VCC
VI
VO
IOH
IOL
Δt/ΔV Input transition rise or fall rate
TA
Notes: 5. Unused inputs should be held at VCC or Ground.
Operating Voltage
Input Voltage 0 5.5 V
Output Voltage 0
High-level output current
Low-level output current
Operating free-air temperature -40 +125 ºC
Operating 1.65 5.5 V
Data retention only 1.5 V
= 1.65V
V
CC
VCC = 2.3V
VCC = 3V
VCC = 4.5V
= 1.65V
V
CC
VCC = 2.3V
VCC = 3V
VCC = 4.5V
= 1.8V ± 0.15V, 2.5V ± 0.2V
V
CC
VCC = 3.3V ± 0.3V
VCC = 5V ± 0.5V
-4
-8
-16
-24
-32
4
8
16
24
32
20
10
5
74LVC1G57
-0.5 to +6.5 V
V
-50 mA
VCC
V
mA
mA
ns/V
74LVC1G57
Document number: DS35125 Rev. 4 - 2
4 of 15
www.diodes.com
June 2012
© Diodes Incorporated
Electrical Characteristics T
Symbol Parameter Test Conditions
VT+
VT-
NEW PRODUCT
ΔVT
VOH
VOL
I
OFF
ICC
ΔICC
74LVC1G57
Document number: DS35125 Rev. 4 - 2
Positive-going input
threshold voltage
Negative-going input
threshold voltage
Hysteresis
T+ - VT-)
(V
High Level Output Voltage
High-level Input Voltage
II
Input Current
Power Down Leakage Current
Supply Current
Additional Supply Current
74LVC1G57
CONFIGURABLE MULTIPLE-FUNCTION GATE
= -40°C to +85°C (All typical values are at VCC = 3.3V, TA = +25°C)
A
VCC
1.65V 0.70 1.20
2.3V 1.11 1.60
3V 1.50 2.00
4.5V 2.16 2.74
5.5V 2.61 3.33
1.65V 0.30 0.72
2.3V 0.58 1.00
3V 0.80 1.30
4.5V 1.21 1.95
5.5V 1.45 2.35
1.65V 0.30 0.62
2.3V 0.40 0.80
3V 0.35 1.00
4.5V 0.55 1.10
5.5V 0.60 1.20
= -100μA
I
OH
IOH = -4mA
IOH = -8mA
IOH = -16mA
IOH = -24mA
IOH = -32mA
= 100μA
I
OL
IOL = 4mA
IOL = 8mA
IOL = 16mA
IOL = 24mA
IOL = 32mA
VI = 5.5V or GND
VI or VO = 5.5V
= 5.5V of GND
V
I
=0
I
O
One input at V
Other inputs at V
GND
CC
-0.6V
or
CC
5 of 15
www.diodes.com
1.65V to 5.5V
1.65V 1.2
2.3V 1.9
3V
4.5V 3.8
1.65V to 5.5V 0.1
1.65V 0.45
2.3V 0.3
3V
4.5V 0.55
0 to 5.5V ± 5 μA
0 ± 10 μA
1.65V to 5.5V
3V to 5.5V
Min Typ. Max Unit
V
-0.1
CC
2.4
2.3
0.4
0.55
10 μA
500 μA
June 2012
© Diodes Incorporated
V
V