Diodes 74LVC1G10DW, 74LVC1G10FW4, 74LVC1G10FZ4, 74LVC1G10W6 Schematic

SINGLE 3 INPUT POSITIVE NAND GATE

Description

The 74LVC1G10 is a single 3-input positive NAND gate with a standard push-pull output. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are tolerant to 5.5V allowing this device to be used in a mixed voltage environment. The device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output preventing damaging current backflow when the device is powered down. The gate performs the positive Boolean function:

CBAY ••= or CBAY ++=

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Features

• Wide Supply Voltage Range from 1.65V to 5.5V

• ± 24mA Output Drive at 3.3V

• CMOS low power consumption

• IOFF Supports Partial-Power-Down Mode Operation

• Inputs accept up to 5.5V

• ESD Protection Exceeds JESD 22 200-V Machine Model (A115-A) 2000-V Human Body Model (A114-A)

• Latch-Up Exceeds 100mA per JESD 78, Class II

• Range of Package Options

• SOT26, SOT363, DFN1410, and DFN1010: Available in

“Green” Molding Compound (no Br, Sb)

• Lead Free Finish/ RoHS Compliant (Note 1)

Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at

http://www.diodes.com/products/lead_free.html.

A

GND

B

GND

Applications

• Voltage Level Shifting

• General Purpose Logic

• Power Down Signal Isolation

• Wide array of products such as:

o PCs, networking, notebooks, netbooks, PDAs o Computer peripherals, hard drives, CD/DVD ROM o TV, DVD, DVR, set top box o Cell Phones, Personal Navigation / GPS o MP3 players ,Cameras, Video Recorders

Pin Assignments

(Top View)

1 2

3

SOT26

(Top View)

A

1

6

2

5

3

B

4

DFN1410

74LVC1G10

(Top View)

GND

1

A

2

3

B

6

C

5

V

CC

4

Y

SOT363

GND

(Top View)

1

A

2 3

B

DFN1010

C V

CC

Y

6

C

5

V

CC

4

Y

6

C

5

V

CC

4

Y

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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October 2011

Pin Descriptions

Pin Name Description

GND Ground

VCC

Logic Diagram

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Function Table

A Data Input

B Data Input Y Data Output

Supply Voltage

C Data Input

1

A

3

B

6

C

74LVC1G10

SINGLE 3 INPUT POSITIVE NAND GATE

4

Y

Inputs Output

A B C Y

H H H L

L X X H X L X H X X L H

Absolute Maximum Ratings (Note 2)

Symbol Description Rating Unit

ESD HBM Human Body Model ESD Protection 2 KV

ESD MM Machine Model ESD Protection 200 V

VCC

VI VO Voltage applied to output in high impedance or I VO

IIK Input Clamp Current VI<0

IOK

IO

Continuous current through Vdd or GND ±100 mA

TJ

T

STG

Notes: 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values.

Supply Voltage Range -0.5 to 6.5 V Input Voltage Range -0.5 to 6.5 V

state

OFF

Voltage applied to output in high or low state

Output Clamp Current -50 mA Continuous output current ±50 mA

Operating Junction Temperature -40 to 150 °C Storage Temperature -65 to 150 °C

-0.5 to 6.5 V

-0.3 to VCC +0.5

-50 mA

V

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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October 2011

Recommended Operating Conditions (Note 3)

Symbol Parameter Min Max Unit

VCC

V

VIL

VI

VO

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IOH

IOL

Δt/ΔV

TA

Notes: 3. Unused inputs should be held at Vcc or Ground.

Operating Voltage

High-level Input Voltage

IH

Low-level input voltage

Input Voltage 0 5.5 V Output Voltage 0

High-level output current

Low-level output current

Input transition rise or fall rate

Operating free-air temperature

74LVC1G10

SINGLE 3 INPUT POSITIVE NAND GATE

Operating 1.65 5.5 V Data retention only 1.5 V V

= 1.65V to 1.95V 0.65 X VCC

CC

VCC = 2.3V to 2.7V VCC = 3V to 3.6V

1.7 2

VCC = 4.5V to 5.5V 0.7 X VCC VCC = 1.65V to 1.95V VCC = 2.3V to 2.7V VCC = 3V to 3.6V VCC = 4.5V to 5.5V

= 1.65V

V

CC

VCC = 2.3V VCC = 3V VCC = 4.5V

= 1.65V

V

CC

VCC = 2.3V VCC = 3V VCC = 4.5V

V

= 1.8V ± 0.15V, 2.5V ± 0.2V

CC

VCC = 3.3V ± 0.3V VCC = 5V ± 0.5V

0.7

0.8

-4

-8

-16

-24

-32 4 8 16 24 32 20 10 5

-40 125 ºC

0.35 X VCC

0.3 X VCC

VCC

V

mA

ns/V

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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October 2011

Electrical Characteristics T

Symbol Parameter Test Conditions

High Level Output Voltage

High-level Input Voltage

II

Input Current Power Down Leakage

Current Supply Current Additional Supply

Current

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VOH

VOL

I

OFF

ICC

ΔICC

74LVC1G10

SINGLE 3 INPUT POSITIVE NAND GATE

= -40°C to 85°C (All typical values are at VCC = 3.3V, TA = 25°C)

A

Min Typ. Max Unit

V

– 0.1

CC

2.4

2.3

0.1

0.45

0.3

0.4

0.55

0.55 ± 5 μA

10 μA

I

= -100μA

OH

IOH = -4mA IOH = -8mA IOH = -16mA IOH = -24mA IOH = -32mA I

= 100μA

OL

IOL = 4mA IOL = 8mA IOL = 16mA IOL = 24mA IOL = 32mA VI = 5.5 V or GND

or VO = 5.5V

V

I

= 5.5V of GND

V

I

=0

I

O

Input at V

–0.6V

CC

VCC

1.65V to 5.5V

1.65V 1.2

2.3V 1.9 3V

4.5V 3.8

1.65V to 5.5V

1.65V

2.3V 3V

4.5V

0 to 5.5V

0 ± 10 μA

1.65V to 5.5V

3V to 5.5V 500 μA

V

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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October 2011

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Electrical Characteristics T

Symbol Parameter Test Conditions

VOH

VOL

II

I

OFF

ICC

ΔICC

Ci

θ

JA

θ

JC

High Level Output Voltage

High-level Input Voltage

Input Current Power Down Leakage

Current Supply Current Additional Supply

Current Input Capacitance

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

= -40°C to 125°C (All typical values are at VCC = 3.3V, TA = 25°C)

A

= -100μA

I

OH

IOH = -4mA IOH = -8mA IOH = -16mA IOH = -24mA IOH = -32mA

= 100μA

I

OL

IOL = 4mA IOL = 8mA IOL = 16mA IOL = 24mA IOL = 32mA VI = 5.5 V or GND

or VO = 5.5V

V

I

VI = 5.5V of GND

=0

I

O

Input at VCC –0.6V Vi = V

– or GND

CC

SOT26 SOT363 371 DFN1410 430 DFN1010 510 SOT26 SOT363 143 DFN1410 190 DFN1010 250

74LVC1G10

SINGLE 3 INPUT POSITIVE NAND GATE

VCC

1.65V to 5.5V

1.65V 0.95

2.3V 1.7 3V

4.5V 3.4

1.65V to 5.5V

1.65V

2.3V 3V

4.5V

0 to 5.5V

0 ± 20 μA

1.65V to 5.5V

3V to 5.5V 5000 μA

3.3

(Note 4)

Min Typ. Max Unit

V

– 0.1

CC

1.9

2.0

4

0.1

0.70

0.45

0.60

0.80

0.80 ± 20 μA

40 μA

pF

204

52

o

C/W

o

C/W

V

Package Characteristics (All typical values are at Vcc = 3.3V, T

= 25°C)

A

Symbol Parameter Test Conditions VCC Min Typ. Max Unit

3.5

430 510

190 250

pF

o

C/W

o

C/W

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θ

CI

Input Capacitance

Thermal Resistance

JA

Junction-to-Ambient

Thermal Resistance

JC

Junction-to-Case

VI = V SOT26

– or GND

CC

3.3 204

SOT363 371 DFN1410

DFN1010 SOT26

(Note 4)

52

SOT363 143 DFN1410

(Note 4)

DFN1010

Notes: 4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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Diodes 74LVC1G10DW, 74LVC1G10FW4, 74LVC1G10FZ4, 74LVC1G10W6 Schematic [ru]