Diodes 74LVC1G10 User Manual

SINGLE 3 INPUT POSITIVE NAND GATE

Description

The 74LVC1G10 is a single 3-input positive NAND gate with
a standard push-pull output. The device is designed for
operation with a power supply range of 1.65V to 5.5V. The
inputs are tolerant to 5.5V allowing this device to be used in
a mixed voltage environment. The device is fully specified
for partial power down applications using IOFF. The IOFF
circuitry disables the output preventing damaging current
backflow when the device is powered down.
The gate performs the positive Boolean function:

CBAY ••= or CBAY ++=

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Features

• Wide Supply Voltage Range from 1.65V to 5.5V

• ± 24mA Output Drive at 3.3V

• CMOS low power consumption

• IOFF Supports Partial-Power-Down Mode Operation

• Inputs accept up to 5.5V

• ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)

• Latch-Up Exceeds 100mA per JESD 78, Class II

• Range of Package Options

• SOT26, SOT363, DFN1410, and DFN1010: Available in

“Green” Molding Compound (no Br, Sb)

• Lead Free Finish/ RoHS Compliant (Note 1)

Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at

http://www.diodes.com/products/lead_free.html.

A

GND

B

GND

Applications

• Voltage Level Shifting

• General Purpose Logic

• Power Down Signal Isolation

• Wide array of products such as:

o PCs, networking, notebooks, netbooks, PDAs
o Computer peripherals, hard drives, CD/DVD ROM
o TV, DVD, DVR, set top box
o Cell Phones, Personal Navigation / GPS
o MP3 players ,Cameras, Video Recorders

Pin Assignments

(Top View)

1
2

3

SOT26

(Top View)

A

1

6

2

5

3

B

4

DFN1410

74LVC1G10

(Top View)

GND

1

A

2

3

B

6

C

5

V

CC

4

Y

SOT363

GND

(Top View)

1

A

2
3

B

DFN1010

C
V

CC

Y

6

C

5

V

CC

4

Y

6

C

5

V

CC

4

Y

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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October 2011

© Diodes Incorporated

Pin Descriptions

Pin Name Description

GND Ground

VCC

Logic Diagram

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Function Table

A Data Input

B Data Input
Y Data Output

Supply Voltage

C Data Input

1

A

3

B

6

C

74LVC1G10

SINGLE 3 INPUT POSITIVE NAND GATE

4

Y

Inputs Output

A B C Y

H H H L

L X X H
X L X H
X X L H

Absolute Maximum Ratings (Note 2)

Symbol Description Rating Unit

ESD HBM Human Body Model ESD Protection 2 KV

ESD MM Machine Model ESD Protection 200 V

VCC

VI
VO Voltage applied to output in high impedance or I
VO

IIK Input Clamp Current VI<0

IOK

IO

Continuous current through Vdd or GND ±100 mA

TJ

T

STG

Notes: 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.

Supply Voltage Range -0.5 to 6.5 V
Input Voltage Range -0.5 to 6.5 V

state

OFF

Voltage applied to output in high or low state

Output Clamp Current -50 mA
Continuous output current ±50 mA

Operating Junction Temperature -40 to 150 °C
Storage Temperature -65 to 150 °C

-0.5 to 6.5 V

-0.3 to VCC +0.5

-50 mA

V

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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October 2011

© Diodes Incorporated

Recommended Operating Conditions (Note 3)

Symbol Parameter Min Max Unit

VCC

V

VIL

VI

VO

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IOH

IOL

Δt/ΔV

TA

Notes: 3. Unused inputs should be held at Vcc or Ground.

Operating Voltage

High-level Input Voltage

IH

Low-level input voltage

Input Voltage 0 5.5 V
Output Voltage 0

High-level output current

Low-level output current

Input transition rise or fall
rate

Operating free-air
temperature

74LVC1G10

SINGLE 3 INPUT POSITIVE NAND GATE

Operating 1.65 5.5 V
Data retention only 1.5 V
V

= 1.65V to 1.95V 0.65 X VCC

CC

VCC = 2.3V to 2.7V
VCC = 3V to 3.6V

1.7
2

VCC = 4.5V to 5.5V 0.7 X VCC
VCC = 1.65V to 1.95V
VCC = 2.3V to 2.7V
VCC = 3V to 3.6V
VCC = 4.5V to 5.5V

= 1.65V

V

CC

VCC = 2.3V
VCC = 3V
VCC = 4.5V

= 1.65V

V

CC

VCC = 2.3V
VCC = 3V
VCC = 4.5V

V

= 1.8V ± 0.15V, 2.5V ± 0.2V

CC

VCC = 3.3V ± 0.3V
VCC = 5V ± 0.5V

0.7

0.8

-4

-8

-16

-24

-32
4
8
16
24
32
20
10
5

-40 125 ºC

0.35 X VCC

0.3 X VCC

VCC

V

V

V

mA

mA

ns/V

74LVC1G10

Document number: DS35121 Rev. 3 - 2

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Electrical Characteristics T

Symbol Parameter Test Conditions

High Level Output
Voltage

High-level Input Voltage

II

Input Current
Power Down Leakage

Current
Supply Current
Additional Supply

Current

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VOH

VOL

I

OFF

ICC

ΔICC

74LVC1G10

SINGLE 3 INPUT POSITIVE NAND GATE

= -40°C to 85°C (All typical values are at VCC = 3.3V, TA = 25°C)

A

Min Typ. Max Unit

V

– 0.1

CC

2.4

2.3

0.1

0.45

0.3

0.4

0.55

0.55
± 5 μA

10 μA

I

= -100μA

OH

IOH = -4mA
IOH = -8mA
IOH = -16mA
IOH = -24mA
IOH = -32mA
I

= 100μA

OL

IOL = 4mA
IOL = 8mA
IOL = 16mA
IOL = 24mA
IOL = 32mA
VI = 5.5 V or GND

or VO = 5.5V

V

I

= 5.5V of GND

V

I

=0

I

O

Input at V

–0.6V

CC

VCC

1.65V to 5.5V

1.65V 1.2

2.3V 1.9
3V

4.5V 3.8

1.65V to 5.5V

1.65V

2.3V
3V

4.5V

0 to 5.5V

0 ± 10 μA

1.65V to 5.5V

3V to 5.5V 500 μA

V

V

74LVC1G10

Document number: DS35121 Rev. 3 - 2

4 of 13

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October 2011

© Diodes Incorporated