Page 1
Composite Transistors
XP611FH
Silicon PNP epitaxial planer transistor
For switching/digital circuits
Features
■
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
UN111F+UN111H
[Tr1] [Tr2]
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Tr1
Tr2
Overall
Collector to base voltage
Collector to emitter voltage
Collector current I
Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
C
V
CBO
V
CEO
C
P
T
T
j
T
stg
–50 V
–50 V
–100 mA
–50 V
–50 V
–100 mA
150 mW
150 ˚C
–55 to +150 ˚C
2.1±0.1
1.25±0.1
0.425 0.425
1
0.650.65
2
2.0±0.10.9±0.1
3
0.2
0.7±0.1
0 to 0.1
1 : Emitter (Tr1) 4 : Collector (Tr2)
2 : Emitter (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 4S
Internal Connection
1
2
34
Tr1
Tr2
6
5
4
+0.05
–0.02
0.12
0.2±0.1
6
5
Unit: mm
0.2±0.05
1
Page 2
Composite Transistors XP611FH
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
I
I
V
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
Resistance ratio R1/R
2
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 –1.0 mA
VCE = –10V, IC = –5mA 30
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
–30% 4.7 +30% kΩ
0.47
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
I
Collector cutoff current
Emitter cutoff current I
I
CBO
CEO
EBO
Forward current transfer ratio h
Collector to emitter saturation voltage
V
Output voltage high level V
Output voltage low level V
Transition frequency f
T
Input resistance R
Resistance ratio R1/R
CBO
CEO
FE
CE(sat)
OH
OL
1
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.5 mA
VCE = –10V, IC = –5mA 30
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
–30% 2.2 +30% kΩ
2
0.17 0.22 0.27
2
Page 3
Composite Transistors XP611FH
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of Tr1
)
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
IB=–1.0mA
–0.9mA
0
0 –12–2 –10–4 –8–6
–0.8mA
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
–0.7mA
–0.6mA
CB
Ta=25˚C
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–10000
–3000
)
–1000
µA
(
O
–300
–25˚C
–0.1 –0.3
Collector current IC (mA
— I
CE(sat)
25˚C
–1 –3 –10 –30 –100
C
IC/IB=10
Ta=75˚C
)
IO — V
IN
VO=–5V
Ta=25˚C
hFE — I
160
FE
120
80
40
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
–100
)
V
(
IN
VIN — I
–30
–10
–3
O
VO=–0.2V
Ta=25˚C
)
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
3
Page 4
Composite Transistors XP611FH
Characteristics charts of Tr2
— V
I
C
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
CB
Ta=25˚C
IB=–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
–100
)
V
(
CE(sat)
–10
–1
–0.1
V
CE(sat)
Ta=75˚C
25˚C
–25˚C
— I
C
IC/IB=10
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–100
)
–10
V
(
IN
–10 –30 –100 –300 –1000
Collector current IC (mA
IO — V
IN
VO=–0.2V
Ta=25˚C
)
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
)
3
2
1
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
–1
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Output current IO (mA
)
4
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