Datasheet XP04506 Datasheet (Panasonic)

Composite Transistors

XP4506

Silicon NPN epitaxial planer transistor

For amplification of low frequency output

Features

■

●

High emitter to base voltage V

●

High forward current transfer ratio hFE.

●

Low ON resistor Ron.

Basic Part Number of Element

■

●

2SD1915F × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V
V
V

T

CBO

CEO

EBO

I

CP

P

T

.

EBO

50 V
20 V
25 V

C

300 mA
500 mA

T

j

stg

150 mW
150 ˚C

–55 to +150 ˚C

2.1±0.1

1.25±0.1

0.425 0.425

1

0.650.65

2

2.0±0.10.9±0.1

3

0.2

0.7±0.1

0 to 0.1

1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)

EIAJ : SC–88
S–Mini Type Package (6–pin)

Marking Symbol: EN

Internal Connection

16

2

34

Tr1

Tr2

6

5

4

+0.05

–0.02

0.12

0.2±0.1

5

Unit: mm

0.2±0.05

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to emitter voltage V
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
ON Resistance R

*1

Ron measuring circuit

CBO

EBO

V

T

CEO

FE

BE

CE(sat)

ob

on

IB=1mA

*1

V

B

R

= ✕1000(Ω)

on

VA–V

IC = 1mA, IB = 0 20 V
VCB = 50V, IE = 0 0.1 µA
VEB = 25V, IC = 0 0.1 µA
VCE = 2V, IC = 4mA 500 2500
VCE = 2V, IC = 4mA 0.6 V
IC = 30mA, IB = 3mA 0.1 V
VCB = 6V, IE = –4mA, f = 200MHz 80 MHz
VCB = 10V, IE = 0, f = 1MHz 7 pF

1 Ω

1kΩ

f=1kHz

V

V

B

V

V

B

V=0.3V

A

1

Composite Transistors XP4506

PT — Ta IC — V

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

V

— I

10

)

V

(

CE(sat)

0.1

0.01

CE(sat)

1

25˚C

C

Ta=75˚C

Collector to emitter saturation voltage V

0.001

0.1

1 10 100

Collector current IC (mA

)

IC/IB=10

–25˚C

)

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

012210486

Collector to emitter voltage VCE (V

hFE — I

2000

FE

1600

25˚C

1200

–25˚C

800

400

C

Ta=75˚C

Forward current transfer ratio h

0

0.1

1 10 100

Collector current IC (mA

Ta=25˚C

IB=10µA

8µA

6µA

4µA

2µA

VCE=2V

)

IC — V

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.00.80.60.40.2

)

Base to emitter voltage VBE (V

200

Ta=75˚C

fT — I

BE

E

VCE=2V

25˚C

–25˚C

VCB=6V
Ta=25˚C

)

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–0.1 –1 –10 –100

Emitter current IE (mA

)

Cob — V

20

CB

)
pF

(

16

ob

12

8

4

Collector output capacitance C

0

1 10 100

Collector to base voltage VCB (V

2

f=1MHz
Ta=25˚C

)