Page 1
Composite Transistors
XP4654
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For high speed switching
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SC3757+2SA1738
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CES
V
EBO
C
I
CP
V
CBO
V
CES
V
EBO
C
I
CP
P
T
T
j
T
stg
40 V
40 V
5V
100 mA
300 mA
–15 V
–15 V
–4 V
–50 mA
–100 mA
150 mW
150 ˚C
–55 to +150 ˚C
2.1±0.1
1.25±0.1
0.425 0.425
1
0.650.65
2
2.0±0.10.9±0.1
3
0.2
0.7±0.1
0 to 0.1
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: ED
Internal Connection
Tr1
16
2
34
Tr2
6
5
4
+0.05
–0.02
0.12
0.2±0.1
5
Unit: mm
0.2±0.05
1
Page 2
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
Turn-on time t
Turn-off time t
Storage time t
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Turn-on time t
Turn-off time t
Storage time t
*1
Refer to the test circuit (page 459)
*2
Refer to the test circuit (page 460)
CBO
EBO
V
T
on
off
stg
CBO
EBO
h
h
V
T
on
off
stg
FE
CE(sat)
BE(sat)
ob
FE1
FE2
CE(sat)
ob
XP4654
VCB = 40V, IE = 0 0.1 µA
VEB = 4V, IC = 0 0.1 µA
VCE = 1V, IC = 10mA 60 320
IC = 10mA, IB = 1mA 0.17 0.25 V
IC = 10mA, IB = 1mA 1.0 V
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz 2 6 pF
*1
VCB = –8V, IE = 0 – 0.1 µA
VEB = –3V, IC = 0 – 0.1 µA
VCE = –1V, IC = –10mA 50 150
VCE = –1V, IC = –1mA 30
IC = –10mA, IB = –1mA – 0.1 – 0.2 V
VCB = –10V, IE = 10mA, f = 200MHz
800 1500 MHz
VCB = –5V, IE = 0, f = 1MHz 1 pF
*2
450 MHz
17 ns
17 ns
10 ns
12 ns
20 ns
19 ns
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
2
)
Page 3
Composite Transistors
Characteristics charts of Tr1
Switching time measuring circuit
t
, t
Test Circuit t
on
off
0.1µF
220Ω
3.3kΩ
=10V
V
in
50Ω
3.3kΩ
V
bb
–3V
=
50Ω
V
=3V
CC
XP4654
T est Circuit
stg
50Ω
0.1µF
A
500Ω
500Ω
V
bb
=2V
V
out
Vin=10V
910Ω
0.1µF
90Ω
VCC=10V
1kΩ
V
out
V
in
10%
V
out
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
01.20.2 1.00.4 0.80.6
90%
t
on
— V
I
C
Collector to emitter voltage VCE (V
V
V
out
10%
in
90%
t
off
CE
Ta=25˚C
IB=3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
)
0
V
in
V
out
(Wave form at A)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
Collector current IC (mA
10%
10%
t
stg
V
— I
CE(sat)
1 3 10 30 100
25˚C
C
IC/IB=10
Ta=75˚C
–25˚C
)
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
13
10 30 100 300 1000
C
I
Ta=–25˚C
C/IB
75˚C
25˚C
Collector current IC (mA
=10
)
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 0.3
Ta=75˚C
25˚C
–25˚C
1 3 10 30 100
Collector current IC (mA
VCE=1V
)
fT — I
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
–1 –3
–10 –30 –100 –300 –1000
Emitter current IE (mA
E
6
VCB=10V
Ta=25˚C
)
pF
(
ob
5
4
3
2
1
Cob — V
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
3 10 30 100
1
)
Collector to base voltage VCB (V
)
3
Page 4
Composite Transistors XP4654
Characteristics charts of Tr2
Switching time measuring circuit
t
, t
Test Circuit t
on
off
V
BB
2kΩ 62Ω
0.1µF
V
in
51Ω
52Ω
VCC=–1.5V
V
out
V
in
0.1µF
51Ω
T est Circuit
stg
VBB=–10V
508Ω 30Ω
VCC=–3V
34Ω
V
out
0
10%
V
in
V
out
t
ontoff
V
=–5.8V
in
V
=Ground
BB
— V
I
C
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
90%
90%
V
V
in
BB
CE
10%
=9.8V
=–8.0V
IB=–600µA
Ta=25˚C
–500µA
–400µA
–300µA
–200µA
–100µA
0
V
in
V
out
–100
)
V
(
CE(sat)
–10
–1
–0.1
Collector to emitter saturation voltage V
–0.01
)
–1
Collector current IC (mA
90%
90%
t
off
V
=9.0V
in
V
— I
CE(sat)
–10 –100 –1000
C
Ta=75˚C
25˚C
–25˚C
IC/IB=10
)
V
— I
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Base to emitter saturation voltage V
–0.01
1
10 100 1000330300
C
IC/IB=10
Ta=–25˚C
25˚C
75˚C
Collector current IC (mA
)
hFE — I
C
240
FE
200
160
120
Ta=75˚C
80
25˚C
–25˚C
40
Forward current transfer ratio h
0
–0.1
–1 –10 –100
Collector current IC (mA
4
VCE=–10V
fT — I
2400
)
2000
MHz
(
T
1600
1200
800
400
Transition frequency f
E
VCB=–10V
f=200MHz
Ta=25˚C
2.4
)
pF
(
2.0
ob
1.6
1.2
0.8
0.4
Cob — V
CB
f=1MHz
=0
I
E
Ta=25˚C
Collector output capacitance C
0
3 10 30 100
1
)
Emitter current IE (mA
)
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
)
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