Datasheet XN04505 Datasheet (Panasonic)

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4505

NPN epitaxial planer transistor

For general amplification (Tr1)
For amplification of low frequency output (Tr2)

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD601A+2SD1328

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage

Tr1

Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage

Tr2

Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

60 V
50 V

7V
100 mA
200 mA

25 V
20 V
12 V

0.5 A
1A

300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: DZ

Internal Connection

Tr1

61

5

43

Tr2

2

Unit: mm

1

Composite Transistors

Electrical Characteristics (Ta=25˚C)

■

●

Tr1

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C

●

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
ON Resistance R

*1

Pulse measurement

*2

Ron test circuit

IB=1mA

R

= ✕1000(Ω)

on

VA–V

V

1kΩ

V

B

V

V

B

B

CBO

CEO

EBO

I

CBO

I

CEO

FE

V

CE(sat)

T

ob

CBO

CEO

EBO

CBO

h

FE1

h

FE2

V

CE(sat)

BE(sat)

T

ob

on

f=1kHz
V=0.3V

V

A

XN4505

IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF

IC = 10µA, IE = 0 25 V
IC = 1mA, IB = 0 20 V
IE = 10µA, IC = 0 12 V
VCB = 25V, IE = 0 0.1 µA
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
IC = 0.5A, IB = 20mA 0.13 0.4 V
IC = 0.5A, IB = 20mA 1.2 V
VCB = 10V, IE = –50mA 200 MHz
VCB = 10V, IE = 0, f = 1MHz 10 pF

*2

*1

*1

200 800

60

1.0 Ω

Common characteristics chart

PT — Ta

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

)

2

Composite Transistors XN4505

Characteristics charts of Tr1

— V

I

C

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

01024 86

Collector to emitter voltage VCE (V

IC — I

240

VCE=10V
Ta=25˚C

200

)
mA

(

160

C

120

80

Collector current I

40

0

0 1000800600400200

Base current IB (µA

CE

B

Ta=25˚C

IB=160µA

140µA

120µA
100µA

80µA

60µA
40µA

20µA

)

IB — V

BE

1200

1000

VCE=10V
Ta=25˚C

)
µA

(

800

B

600

400

Base current I

200

0

01.00.80.60.40.2

)

Base to emitter voltage VBE (V

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

Ta=75˚C

–25˚C

0.03

Collector to emitter saturation voltage V

0.01

0.1 0.3

25˚C

1 3 10 30 100

Collector current IC (mA

)

C

IC/IB=10

)

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

02.01.61.20.80.4

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 0.3

IC — V

BE

VCE=10V

25˚C

Ta=75˚C –25˚C

Base to emitter voltage VBE (V

hFE — I

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

1 3 10 30 100

Collector current IC (mA

)

)

fT — I

300

)

240

MHz

(

T

180

120

60

Transition frequency f

0
–0.1 –0.3

–1 –3 –10 –30 –100

Emitter current IE (mA

E

VCB=10V
Ta=25˚C

)

3

Composite Transistors

Characteristics charts of Tr2

XN4505

— V

I

C

CE

1.2
IB=4.0mA

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0615243

Collector to emitter voltage VCE (V

hFE — I

C

1200

FE

1000

800

Ta=75˚C

600

25˚C

–25˚C

400

200

Forward current transfer ratio h

0

0.01 0.03

0.1 0.3 1 3 10

Collector current IC (A

Ta=25˚C

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=2V

)

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

Ta=75˚C

0.03

Collector to emitter saturation voltage V

0.01

0.01 0.03

)

0.1 0.3 1 3 10

Collector current IC (A

fT — I

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

25˚C

–25˚C

C

IC/IB=25

100

)

V

(

30

BE(sat)

10

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

)

E

VCB=10V
Ta=25˚C

)
pF

(

24

20

ob

16

12

V

BE(sat)

3

25˚C

1

0.01 0.03

Ta=–25˚C

75˚C

0.1 0.3 1 3 10

Collector current IC (A

Cob — V

8

4

— I

CB

C

IC/IB=10

)

f=1MHz
I

=0

E

Ta=25˚C

Collector output capacitance C

0

–1 –3 –10

–5 –50

Emitter current IE (mA

–20

–30

–100–2

)

0

3 10 30 100220550

1

Collector to base voltage VCB (V

)

4