Datasheet XN04608 Datasheet (Panasonic)

Composite Transistors

2.8

+0.2 –0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25 –0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4608

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)

For general amplification (Tr1) For amplification of low frequency output (Tr2)

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD601A+2SB970

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage Collector to emitter voltage

Tr1

Emitter to base voltage Collector current I Peak collector current Collector to base voltage Collector to emitter voltage

Tr2

Emitter to base voltage Collector current I Peak collector current Total power dissipation Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

j

T

stg

60 V 50 V

7V 100 mA 200 mA –15 V –10 V

–7 V

– 0.5 A

–1 A 300 mW 150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2) 2 : Base (Tr2) 5 : Base (Tr1) 3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74 Mini Type Package (6–pin)

Marking Symbol: 5E

Internal Connection

Tr1

61

5

43

Tr2

Unit: mm

2

1

Composite Transistors

Electrical Characteristics (Ta=25˚C)

■

●

Tr1

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h Collector to emitter saturation voltage Transition frequency f Collector output capacitance C

●

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector cutoff current I

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage V Transition frequency f Collector output capacitance C

I I

V

h h V

CBO

CEO

T

CBO

T

CBO

CEO

EBO

FE

CE(sat)

ob

CBO

CEO

EBO

FE1

FE2

CE(sat)

BE(sat)

ob

XN4608

IC = 10µA, IE = 0 60 V IC = 2mA, IB = 0 50 V IE = 10µA, IC = 0 7 V VCB = 20V, IE = 0 0.1 µA VCE = 10V, IB = 0 100 µA VCE = 10V, IC = 2mA 160 460 IC = 100mA, IB = 10mA 0.1 0.3 V VCB = 10V, IE = –2mA, f = 200MHz 150 MHz VCB = 10V, IE = 0, f = 1MHz 3.5 pF

IC = –10µA, IE = 0 –15 V IC = –1mA, IB = 0 –10 V IE = –10µA, IC = 0 –7 V VCB = –10V, IE = 0 – 0.1 µA VCE = –2V, IC = –0.5A* 100 350 VCE = –2V, IC = –1A* 60 IC = –0.4A, IB = –8mA – 0.16 – 0.3 V IC = –0.4A, IB = –8mA – 0.8 –1.2 V VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 22 pF

130 MHz

* Pulse measurement

Common characteristics chart

— Ta

P

T

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

2

)

Composite Transistors

Characteristics charts of Tr1

XN4608

— V

I

C

60

50

) mA

(

40

C

30

20

Collector current I

10

0

01024 86

Collector to emitter voltage VCE (V

IC — I

240

VCE=10V Ta=25˚C

200

)

mA

(

160

C

120

80

Collector current I

40

0

0 1000800600400200

Base current IB (µA

CE

B

Ta=25˚C

IB=160µA

140µA

120µA 100µA

80µA

60µA 40µA

20µA

)

IB — V

BE

1200

1000

VCE=10V Ta=25˚C

) µA

(

800

B

600

400

Base current I

200

0

0 1.00.80.60.40.2

)

Base to emitter voltage VBE (V

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

Ta=75˚C

0.1 0.3

25˚C

–25˚C

1 3 10 30 100

Collector current IC (mA

)

C

IC/IB=10

)

240

200

) mA

(

160

C

120

80

Collector current I

40

0

02.01.61.20.80.4

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 0.3

IC — V

BE

VCE=10V

25˚C

Ta=75˚C –25˚C

Base to emitter voltage VBE (V

hFE — I

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

1 3 10 30 100

Collector current IC (mA

)

fT — I

300

)

240

MHz

(

T

180

120

60

Transition frequency f

0

–0.1 –0.3

–1 –3 –10 –30 –100

Emitter current IE (mA

E

VCB=10V Ta=25˚C

)

NV — I

240

VCE=10V

=80dB

G

V

Function=FLAT

200

Ta=25˚C

)

mV

(

160

120

80

Noise voltage NV

40

0

30 100 300 100050 50020 200

10

Collector current IC (µA

C

Rg=100kΩ

22kΩ

4.7kΩ

)

3

Composite Transistors

Characteristics charts of Tr2

XN4608

— V

I

C

CE

–1.2

–1.0

) A

(

–0.8

C

–0.6

–0.4

Collector current I

–0.2

0

0–6–1 –5–2 –4–3

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

Ta=75˚C

25˚C

300

–25˚C

200

100

Forward current transfer ratio h

0

–0.01 –0.03

–0.1 –0.3 –1 –3 –10

VCE=–2V

Collector current IC (A

Ta=25˚C

IB=–10mA

–9mA –8mA –7mA –6mA

–5mA –4mA –3mA

–2mA

–1mA

)

V

— I

BE(sat)

–100

)

V

(

–30

BE(sat)

–10

–3

Ta=–25˚C

–1

–0.3

–0.1

–0.03

Base to emitter saturation voltage V

–0.01

–0.01 –0.03

)

75˚C

–0.1 –0.3 –1 –3 –10

Collector current IC (A

fT — I

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

1 3 10 30 100220550

Emitter current IE (mA

25˚C

E

C

IC/IB=50

VCB=–10V Ta=25˚C

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

–0.01 –0.03

)

80

) pF

70

(

ob

60

50

40

30

20

10

Collector output capacitance C

)

V

— I

CE(sat)

25˚C

–0.1 –0.3 –1 –3 –10

C

Ta=75˚C

–25˚C

Collector current IC (A

Cob — V

0

–3 –10

–1

CB

–30

–20

–5 –50

Collector to base voltage VCB (V

IC/IB=50

)

f=1MHz I

=0

E

Ta=25˚C

–100–2

)

4